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KP810A IGBT (IC) Datasheet. Cross Reference Search. KP810A Equivalent

Type Designator: KP810A

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 50W

Maximum collector-emitter voltage |Uce|, V: 1500V

Collector-emitter saturation voltage |Ucesat|, V: 5V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 7A

Maximum junction temperature (Tj), °C: 175

Rise time, nS: 200

Maximum collector capacity (Cc), pF:

Package: TO218

KP810A Transistor Equivalent Substitute - IGBT Cross-Reference Search

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See also transistors datasheet: IXSX35N120AU1 , IXSX40N60CD1 , IXSX50N60AU1 , IXSX50N60AU1S , IXSX50N60BD1 , IXSX50N60BU1 , KP730A , KP731A , FGPF4633 , KP810B , KP810V , MDI100-12A3 , MDI145-12A3 , MDI150-12A4 , MDI200-12A4 , MDI300-12A4 , MDI550-12A4 .

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 KP810A - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


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