MGV12N120D IGBT Transistor Datasheet. Parameters and Characteristics.

Type Designator: MGV12N120D

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 123W

Maximum collector-emitter voltage |Uce|, V: 1200V

Collector-emitter saturation voltage |Ucesat|, V: 2.5V

Maximum gate-emitter voltage |Ueg|, V: 20V

Maximum collector current |Ic|, A: 12A

Maximum junction temperature (Tj), °C: 150

Rise time, nS:

Maximum collector capacity (Cc), pF:

Package: TO268AA

Equivalent transistors for MGV12N120D

MGV12N120D PDF document for downloads:

1.1. mgv12n120d.pdf Size:83K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGV12N120D/D Product Preview Data Sheet MGV12N120D Insulated Gate Bipolar Transistor with Anti-Parallel Diode N–Channel Enhancement Mode Silicon Gate IGBT & DIODE IN D3PAK 12 A @ 90°C This Insulated Gate Bipolar Transistor (IGBT) is co–packaged 20 A @ 25°C with a soft recovery ultra–fast rectifier and uses an advanced 1200 VOLTS termination scheme to provide an enhanced and reliable high SHORT CIRCUIT RATED voltage blocking capability. Short circuit rated IGBTs are specifically suited for applications requiring a guaranteed short circuit withstand time. Fast switching characteristics result in efficient operations at high frequencies. Co–packaged IGBTs save space, reduce assembly time and cost. • High Power Surface Mount D3PAK Package • High Speed Eoff: 160 mJ/A typical at 125°C • High Short Circuit Capability – 10 ms minimum • Soft Recovery Free Wheeling Diode is included in the package C • Robust

1.2. mgv12n120drev0.pdf Size:79K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGV12N120D/D Product Preview Data Sheet MGV12N120D Insulated Gate Bipolar Transistor with Anti-Parallel Diode N–Channel Enhancement Mode Silicon Gate IGBT & DIODE IN D3PAK 12 A @ 90°C This Insulated Gate Bipolar Transistor (IGBT) is co–packaged 20 A @ 25°C with a soft recovery ultra–fast rectifier and uses an advanced 1200 VOLTS termination scheme to provide an enhanced and reliable high SHORT CIRCUIT RATED voltage blocking capability. Short circuit rated IGBTs are specifically suited for applications requiring a guaranteed short circuit withstand time. Fast switching characteristics result in efficient operations at high frequencies. Co–packaged IGBTs save space, reduce assembly time and cost. • High Power Surface Mount D3PAK Package • High Speed Eoff: 160 mJ/A typical at 125°C • High Short Circuit Capability – 10 ms minimum • Soft Recovery Free Wheeling Diode is included in the package C • Robust

See also transistors datasheet: MGP20N60U , MGP21N60E , MGP4N60E , MGP4N60ED , MGP7N60E , MGP7N60ED , MGS05N60D , MGS13002D , SKM100GAX173D , MGW12N120 , MGW12N120D , MGW14N60ED , MGW20N120 , MGW20N60D , MGW21N60ED , MGW30N60 , MGY20N120D .

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