MGW20N60D IGBT Transistor Datasheet. Parameters and Characteristics.

Type Designator: MGW20N60D

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 142W

Maximum collector-emitter voltage |Uce|, V: 600V

Collector-emitter saturation voltage |Ucesat|, V: 2.3V

Maximum gate-emitter voltage |Ueg|, V: 20V

Maximum collector current |Ic|, A: 20A

Maximum junction temperature (Tj), °C: 150

Rise time, nS: 59

Maximum collector capacity (Cc), pF: 2280pF

Package: TO247

Equivalent transistors for MGW20N60D

MGW20N60D PDF document for downloads:

1.1. mgw20n60d.pdf Size:209K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGW20N60D/D Designer's? Data Sheet MGW20N60D Insulated Gate Bipolar Transistor Motorola Preferred Device with Anti-Parallel Diode N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–247 20 A @ 90°C This Insulated Gate Bipolar Transistor (IGBT) is co–packaged 32 A @ 25°C with a soft recovery ultra–fast rectifier and uses an advanced 600 VOLTS termination scheme to provide an enhanced and reliable high SHORT CIRCUIT RATED voltage–blocking capability. Short circuit rated IGBT’s are specifi- cally suited for applications requiring a guaranteed short circuit withstand time such as Motor Control Drives. Fast switching characteristics result in efficient operations at high frequencies. Co–packaged IGBT’s save space, reduce assembly time and cost. • Industry Standard High Power TO–247 Package with C Isolated Mounting Hole • High Speed Eoff: 60 mJ per Amp typical at 125°C • High Short Circuit Capabili

2.1. mgw20n60.pdf Size:246K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGW20N60D/D Designer's? Data Sheet MGW20N60D Insulated Gate Bipolar Transistor Motorola Preferred Device with Anti-Parallel Diode N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–247 20 A @ 90°C This Insulated Gate Bipolar Transistor (IGBT) is co–packaged 32 A @ 25°C with a soft recovery ultra–fast rectifier and uses an advanced 600 VOLTS termination scheme to provide an enhanced and reliable high SHORT CIRCUIT RATED voltage–blocking capability. Short circuit rated IGBT’s are specifi- cally suited for applications requiring a guaranteed short circuit withstand time such as Motor Control Drives. Fast switching characteristics result in efficient operations at high frequencies. Co–packaged IGBT’s save space, reduce assembly time and cost. • Industry Standard High Power TO–247 Package with C Isolated Mounting Hole • High Speed Eoff: 60 mJ per Amp typical at 125°C • High Short Circuit Capabili

4.1. mgw20n120.pdf Size:231K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGW20N120/D Designer's? Data Sheet MGW20N120 Insulated Gate Bipolar Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced IGBT IN TO–247 termination scheme to provide an enhanced and reliable high 20 A @ 90°C voltage–blocking capability. Short circuit rated IGBT’s are specifi- 28 A @ 25°C cally suited for applications requiring a guaranteed short circuit 1200 VOLTS withstand time. Fast switching characteristics result in efficient SHORT CIRCUIT RATED operation at high frequencies. • Industry Standard High Power TO–247 Package with Isolated Mounting Hole • High Speed Eoff: 160 mJ/A typical at 125°C • High Short Circuit Capability – 10 ms minimum • Robust High Voltage Termination C G G C E E CASE 340F–03, Style 4 TO–247AE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Collector–Em

See also transistors datasheet: MGP7N60ED , MGS05N60D , MGS13002D , MGV12N120D , MGW12N120 , MGW12N120D , MGW14N60ED , MGW20N120 , 20N60C3DR , MGW21N60ED , MGW30N60 , MGY20N120D , MGY25N120 , MGY25N120D , MID100-12A3 , MID145-12A3 , MID150-12A4 .

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