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MSAGX75F60A
IGBT Transistor Datasheet. Parameters and Characteristics. Type Designator: MSAGX75F60A
Type of IGBT channel: N-Channel
Maximum power dissipation (Pc) of IGBT transistor, W: 300W
Maximum collector-emitter voltage |Uce|, V: 600V
Collector-emitter saturation voltage |Ucesat|, V: 2.7V
Maximum gate-emitter voltage |Ueg|, V: 20V
Maximum collector current |Ic|, A: 75A
Maximum junction temperature (Tj), °C: 150
Rise time, nS: 50
Maximum collector capacity (Cc), pF: 4000pF
Package: SMD-P
Equivalent transistors for MSAGX75F60A
MSAGX75F60A
PDF document for downloads: PDF unavailable! See also transistors datasheet: MID150-12A4
, MID200-12A4
, MID300-12A4
, MID550-12A4
, MID75-12A3
, MMG05N60D
, MSAGX60F60A
, MSAGX60F60B
, CT40TMH-8
, MSAGX75F60B
, MSAGX75L60A
, MSAGX75L60B
, MSAGZ52F120A
, MSAGZ52F120B
, MSAHX60F60A
, MSAHX60F60B
, MSAHX75L60C
. Keywords| MSAGX75F60A
Datasheet | MSAGX75F60A
Datenblatt | MSAGX75F60A
RoHS | MSAGX75F60A
Distributor | | MSAGX75F60A
Application Notes | MSAGX75F60A
Component | MSAGX75F60A
Circuit | MSAGX75F60A
Schematic | | MSAGX75F60A
Equivalent | MSAGX75F60A
Cross Reference | MSAGX75F60A
Data Sheet | MSAGX75F60A
Fiche Technique |
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