RCP10N40 IGBT Transistor Datasheet. Parameters and Characteristics.

Type Designator: RCP10N40

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 60W

Maximum collector-emitter voltage |Uce|, V: 400V

Collector-emitter saturation voltage |Ucesat|, V: 4.5V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 5A

Maximum junction temperature (Tj), °C: 175

Rise time, nS: 100

Maximum collector capacity (Cc), pF: 800pF

Package: TO220

Equivalent transistors for RCP10N40

RCP10N40 PDF document for downloads:

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See also transistors datasheet: PPNHZ52F120B , RCH10N35 , RCH10N40 , RCH10N40A , RCM10N35 , RCM10N40 , RCM10N40A , RCP10N35 , 1MB30-060 , RCP10N40A , S12N60C3 , SGF15N90D , SGF30N60RUF , SGF30N60RUFD , SGF40N60UF , SGF40N60UFD , SGF5N150UF .

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