SGL40N150 IGBT Transistor Datasheet. Parameters and Characteristics.

Type Designator: SGL40N150

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W:

Maximum collector-emitter voltage |Uce|, V: 1500V

Collector-emitter saturation voltage |Ucesat|, V: 3.7V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 40A

Maximum junction temperature (Tj), °C: 150

Rise time, nS: 180

Maximum collector capacity (Cc), pF:

Package: TO264

Equivalent transistors for SGL40N150

SGL40N150 PDF document for downloads:

1.1. sgl40n150d.pdf Size:415K _samsung

N- CHANNEL IGBT SGL40N150D FEATURES TO-264 * High Speed Switching * Low Saturation Voltage : VCE(sat) = 3.7 V typ. at Ic=40A 1 * High Input Impedance * Built in Fast Recovery Diode :VF=1.7 at IF=10A, trr=170nS C APPLICATIONS G * Home Appliance - Induction Heater - IH JAR E - Micro Wave Oven ABSOLUTE MAXIMUM RATINGS Symbol Characteristics Unit Rating VCES Collector-Emitter Voltage V 1500 VGE Gate - Emitter Voltage V 25 IC Continuous Collector Current Tc = 25 40 A Tc = 100 20 ICM (1) Pulsed Collector Current 120 A PD Maximum Power Dissipation 200 Tc = 25 W 80 Tc = 100 Tj Operating Junction Temperature -55 ~ 150 Tstg Storage Temperature Range TL Soldering maximum lead temperature 300 (1/8 from case for 10 seconds) Notes:(1) Repetitive rating : Pulse with limited by max. junction temperature  N- CHANNEL IGBT SGL40N150D ELECTRICAL CHARACTERISTICS (TC=25 ) Typ Symbol Test Conditions Min Units Characteristics Max BVC

1.2. sgl40n150.pdf Size:171K _samsung

N- CHANNEL IGBT SGL40N150 FEATURES TO-264 * High Speed Switching * Low Saturation Voltage : VCE(sat) = 3.7 V typ. (at Ic=40A) 1 * High Input Impedance APPLICATIONS C * Home Appliance - Induction Heater G - IH JAR - Micro Wave Oven E ABSOLUTE MAXIMUM RATINGS Symbol Characteristics Unit Rating VCES Collector-Emitter Voltage V 1500 VGE Gate - Emitter Voltage V 25 IC Continuous Collector Current Tc = 25 40 A Tc = 100 20 ICM (1) Pulsed Collector Current 120 A PD Maximum Power Dissipation 200 Tc = 25 W 80 Tc = 100 Tj Operating Junction Temperature -55 ~ 150 Tstg Storage Temperature Range TL Soldering maximum lead temperature 300 (1/8 from case for 10 seconds) Notes:(1) Repetitive rating : Pulse with limited by max. junction temperature  N- CHANNEL IGBT SGL40N150 ELECTRICAL CHARACTERISTICS (TC=25 ) Typ Symbol Test Conditions Min Units Characteristics Max BVCES IC = 250 , VGE = 0V 1500 - - V C - E Breakdown Voltage VGE

See also transistors datasheet: SGH80N60UFD , SGI25N40 , SGL10N60RUFD , SGL15N60RUFD , SGL160N60UFD , SGL20N60RUFD , SGL25N120RUFD , SGL30N60RUFD , IXYH82N120C3 , SGL40N150D , SGL50N60RUFD , SGL5N60RUFD , SGL60N90D , SGL60N90DG3 , SGP10N60RUF , SGP13N60UF , SGP13N60UFD .

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