SGR20N40L IGBT Transistor Datasheet. Parameters and Characteristics.

Type Designator: SGR20N40L

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W:

Maximum collector-emitter voltage |Uce|, V: 400V

Collector-emitter saturation voltage |Ucesat|, V: 4.5V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 150A

Maximum junction temperature (Tj), °C: 150

Rise time, nS: 1500

Maximum collector capacity (Cc), pF:

Package: DPAK

Equivalent transistors for SGR20N40L

SGR20N40L PDF document for downloads:

1.1. sgr20n40l.pdf Size:174K _samsung

Preliminary N-CHANNEL IGBT SGR20N40L / SGU20N40L D-PAK I-PAK FEATURES * High Input Impedance * High Peak Current Capability (150A) * Easy Gate Drive APPLICATIONS C *Strobe Flash G E ABSOLUTE MAXIMUM RATINGS Symbol Rating Units Characteristics VCES 450 V Collector-Emitter Voltage VGES 6 V Gate-Emitter Voltage ICM (1) 150 A Pulsed Collector Current PC 45 W Maximum Power Dissipation @Tc = 25 Tj -55 ~ 150 Operating Junction Temperature Tstg -55 ~ 150 Storage Temperature Range TL 300 Maximum Lead Temp. For Soldering Purposes, from case for 5 seconds Notes: (1) Repetitive rating : Pulse width limited by max. junction temperature Preliminary N-CHANNEL IGBT SGR20N40L / SGU20N40L ELECTRICAL CHARACTERISTICS (Tc=25 ,Unless Otherwise Specified) Symbol Characteristics Test Conditions Min Typ Max Units BVCES C - E Breakdown Voltage VGE = 0V , IC = 1mA 450 - - V VGE(th) G - E threshold voltage IC =1mA , VCE = VGE 0.7 1.0 1.4 V ICES Collector cutoff Curren

See also transistors datasheet: SGP20N60RUF , SGP23N60UF , SGP40N60UF , SGP5N60RUF , SGP5N60RUFD , SGP6N60UF , SGP6N60UFD , SGR15N40L , IRG4PF50W , SGR2N60UFD , SGR5N60RUF , SGR6N60UF , SGS10N60RUF , SGS10N60RUFD , SGS13N60UF , SGS13N60UFD , SGS23N60UF .

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