SGS6N60UF IGBT Transistor Datasheet. Parameters and Characteristics.

Type Designator: SGS6N60UF

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W:

Maximum collector-emitter voltage |Uce|, V: 600V

Collector-emitter saturation voltage |Ucesat|, V: 2.1V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 3A

Maximum junction temperature (Tj), °C: 150

Rise time, nS: 80

Maximum collector capacity (Cc), pF:

Package: TO220F

Equivalent transistors for SGS6N60UF

SGS6N60UF PDF document for downloads:

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See also transistors datasheet: SGS10N60RUF , SGS10N60RUFD , SGS13N60UF , SGS13N60UFD , SGS23N60UF , SGS23N60UFD , SGS5N60RUF , SGS5N60RUFD , IRG4PH50UD , SGS6N60UFD , SGU15N40L , SGU1N60XFD , SGU20N40L , SGW13N60UF , SGW13N60UFD , SGW23N60UF , SGW5N60RUF .

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