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SGU1N60XFD
IGBT Transistor Datasheet. Parameters and Characteristics. Type Designator: SGU1N60XFD
Type of IGBT channel: N-Channel
Maximum power dissipation (Pc) of IGBT transistor, W:
Maximum collector-emitter voltage |Uce|, V: 600V
Collector-emitter saturation voltage |Ucesat|, V: 2.5V
Maximum gate-emitter voltage |Ueg|, V:
Maximum collector current |Ic|, A: 1A
Maximum junction temperature (Tj), °C: 150
Rise time, nS: 90
Maximum collector capacity (Cc), pF:
Package: IPAK
Equivalent transistors for SGU1N60XFD
SGU1N60XFD
PDF document for downloads: PDF unavailable! See also transistors datasheet: SGS13N60UFD
, SGS23N60UF
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. Keywords| SGU1N60XFD
Datasheet | SGU1N60XFD
Datenblatt | SGU1N60XFD
RoHS | SGU1N60XFD
Distributor | | SGU1N60XFD
Application Notes | SGU1N60XFD
Component | SGU1N60XFD
Circuit | SGU1N60XFD
Schematic | | SGU1N60XFD
Equivalent | SGU1N60XFD
Cross Reference | SGU1N60XFD
Data Sheet | SGU1N60XFD
Fiche Technique |
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