SGW13N60UFD IGBT Transistor Datasheet. Parameters and Characteristics.

Type Designator: SGW13N60UFD

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W:

Maximum collector-emitter voltage |Uce|, V: 600V

Collector-emitter saturation voltage |Ucesat|, V: 1.95V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 6.5A

Maximum junction temperature (Tj), °C: 150

Rise time, nS: 110

Maximum collector capacity (Cc), pF:

Package: TO263

Equivalent transistors for SGW13N60UFD

SGW13N60UFD PDF document for downloads:

1.1. sgw13n60ufd.pdf Size:274K _samsung

N-CHANNEL IGBT SGW13N60UFD FEATURES D2-PAK * High Speed Switching * Low Saturation Voltage : VCE(sat) = 1.95 V (@ Ic=6.5A) * High Input Impedance *CO-PAK, IGBT with FRD : Trr = 37nS (typ.) APPLICATIONS C * AC & DC Motor controls * General Purpose Inverters G * Robotics , Servo Controls * Power Supply * Lamp Ballast E ABSOLUTE MAXIMUM RATINGS Symbol Rating Units Characteristics VCES 600 V Collector-Emitter Voltage VGES 20 V Gate-Emitter Voltage IC 13 A Collector Current @ Tc = 25 6.5 A Collector Current @ Tc = 100 ICM (1) 52 A Pulsed Collector Current IF 8 A Diode Continuous Forward Current @ Tc = 100 IFM 56 A Diode Maximum Forward Current PD 60 W Maximum Power Dissipation @Tc = 25 25 W Maximum Power Dissipation @Tc = 100 Tj -55 ~ 150 Operating Junction Temperature Tstg -55 ~ 150 Storage Temperature Range TL 300 Maximum Lead Temp. For Soldering Purposes, from case for 5 seconds Notes:(1) Repetitive rating : Pulse width limited b

1.2. sgw13n60uf.pdf Size:230K _samsung

N-CHANNEL IGBT SGW13N60UF FEATURES D2-PAK * High Speed Switching * Low Saturation Voltage : VCE(sat) = 1.95 V (@ Ic=6.5A) * High Input Impedance APPLICATIONS C * AC & DC Motor controls * General Purpose Inverters * Robotics , Servo Controls G * Power Supply * Lamp Ballast E ABSOLUTE MAXIMUM RATINGS Symbol Rating Units Characteristics VCES 600 V Collector-Emitter Voltage VGES 20 V Gate-Emitter Voltage IC 13 A Collector Current @ Tc = 25 6.5 A Collector Current @ Tc = 100 ICM (1) 52 A Pulsed Collector Current PC 60 W Maximum Power Dissipation @Tc = 25 25 W Maximum Power Dissipation @Tc = 100 Tj -55 ~ 150 Operating Junction Temperature Tstg -55 ~ 150 Storage Temperature Range TL 300 Maximum Lead Temp. For Soldering Purposes, from case for 5 seconds Notes:(1) Repetitive rating : Pulse width limited by max. junction temperature N-CHANNEL IGBT SGW13N60UF ELECTRICAL CHARACTERISTICS (Tc=25 ,Unless Otherwise Specified) Symbol Characterist

See also transistors datasheet: SGS5N60RUF , SGS5N60RUFD , SGS6N60UF , SGS6N60UFD , SGU15N40L , SGU1N60XFD , SGU20N40L , SGW13N60UF , HGTG20N60A4 , SGW23N60UF , SGW5N60RUF , SGW5N60RUFD , SGW6N60UF , SGW6N60UFD , SKD100GAL123D , SKD40GAL123D , SKD75GAL123D .

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