SGW5N60RUFD IGBT Transistor Datasheet. Parameters and Characteristics.

Type Designator: SGW5N60RUFD

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W:

Maximum collector-emitter voltage |Uce|, V: 600V

Collector-emitter saturation voltage |Ucesat|, V: 2V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 5A

Maximum junction temperature (Tj), °C: 150

Rise time, nS: 140

Maximum collector capacity (Cc), pF:

Package: TO263

Equivalent transistors for SGW5N60RUFD

SGW5N60RUFD PDF document for downloads:

1.1. sgw5n60rufd.pdf Size:325K _samsung

CO-PAK IGBT SGW5N60RUFD FEATURES D2-PAK * Short Circuit rated 10uS @Tc=100 * High Speed Switching * Low Saturation Voltage : VCE(sat) = 2.0 V @ Ic=5A * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 37nS (Typ.) C APPLICATIONS * AC & DC Motor controls G * General Purpose Inverters * Robotics , Servo Controls * Power Supply E * Lamp Ballast ABSOLUTE MAXIMUM RATINGS Symbol Rating Units Characteristics VCES 600 V Collector-Emitter Voltage VGES 20 V Gate-Emitter Voltage IC 8 A Collector Current @ Tc = 25 5 A Collector Current @ Tc = 100 ICM (1) 15 A Pulsed Collector Current IF 8 A Diode Continuous Forward Current @ Tc = 100 IFM 56 A Diode Maximum Forward Current PD 60 W Maximum Power Dissipation @Tc = 25 25 W Maximum Power Dissipation @Tc = 100 Tsc 10 uS Short Circuit Withstand Time Tj -55 ~ 150 Operating Junction Temperature Tstg -55 ~ 150 Storage Temperature Range TL 300 Maximum Lead Temp. For Soldering Purposes, from case

1.2. sgw5n60ruf.pdf Size:281K _samsung

N-CHANNEL IGBT SGW5N60RUF FEATURES D2-PAK * Short Circuit rated 10uS @Tc=100 * High Speed Switching * Low Saturation Voltage : VCE(sat) = 2.0 V @ Ic=5A * High Input Impedance APPLICATIONS C * AC & DC Motor controls * General Purpose Inverters * Robotics , Servo Controls G * Power Supply * Lamp Ballast E ABSOLUTE MAXIMUM RATINGS Symbol Rating Units Characteristics VCES 600 V Collector-Emitter Voltage VGES 20 V Gate-Emitter Voltage IC 8 A Collector Current @ Tc = 25 5 A Collector Current @ Tc = 100 ICM (1) 15 A Pulsed Collector Current PC 60 W Maximum Power Dissipation @Tc = 25 25 W Maximum Power Dissipation @Tc = 100 Tsc 10 uS Short Circuit Withstand Time Tj -55 ~ 150 Operating Junction Temperature Tstg -55 ~ 150 Storage Temperature Range TL 300 Maximum Lead Temp. For Soldering Purposes, from case for 5 seconds Notes: (1) Repetitive rating : Pulse width limited by max. junction temperature N-CHANNEL IGBT SGW5N60RUF ELECTRICAL CH

See also transistors datasheet: SGS6N60UFD , SGU15N40L , SGU1N60XFD , SGU20N40L , SGW13N60UF , SGW13N60UFD , SGW23N60UF , SGW5N60RUF , IRG4PF50WD , SGW6N60UF , SGW6N60UFD , SKD100GAL123D , SKD40GAL123D , SKD75GAL123D , SKM100GAL123D , SKM100GAR123D , SKM100GAX173D .

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