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G20N60B3D IGBT. Curve Caratteristiche. Datasheet.

Tipo: G20N60B3D

Struttura interna di un IGBT: N-Channel

Potenza massima dissipabile (Pc): 165W

Tensione tra collettore ed emettitore (Uce): 600V

Tensione di saturazione drain source (Ucesat): 2V

Massima tensione gate-source (Ueg): 20V

Massima corrente continuativa (Ic): 40A

Temperatura di giunzione (Tj), Β°C: 150

Tempo di salita del fronte di corrente: 25

CapacitΓ  di uscita (Cc), pF:

Pack: TO247

Equivalente per i G20N60B3D

G20N60B3D PDF doc:

1.1. hgtg20n60b3d.pdf Size:176K _fairchild_semi

G20N60B3D
G20N60B3D

HGTG20N60B3D Data Sheet December 2001 40A, 600V, UFS Series N-Channel IGBT Features with Anti-Parallel Hyperfast Diode • 40A, 600V at TC = 25oC The HGTG20N60B3D is a MOS gated high voltage • Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150oC switching device combining the best features of MOSFETs • Short Circuit Rated and bipolar transistors. The device has the high

2.1. hgtg20n60b3.pdf Size:236K _fairchild_semi

G20N60B3D
G20N60B3D

HGTG20N60B3 Data Sheet October 2004 40A, 600V, UFS Series N-Channel IGBTs Features The HGTG20N60B3 is a Generation III MOS gated high • 40A, 600V at TC = 25oC voltage switching devices combining the best features of • 600V Switching SOA Capability MOSFETs and bipolar transistors. These devices have the • Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150oC high input

4.1. hgtg20n60a4d.pdf Size:148K _fairchild_semi

G20N60B3D
G20N60B3D

HGTG20N60A4D Data Sheet February 2009 600V, SMPS Series N-Channel IGBT with Features Anti-Parallel Hyperfast Diode • >100kHz Operation At 390V, 20A The HGTG20N60A4D is a MOS gated high voltage switching • 200kHz Operation At 390V, 12A device combining the best features of MOSFETs and bipolar • 600V Switching SOA Capability transistors. This device has the high input impedance of a MOS

4.2. hgt1s20n60c3s_hgtp20n60c3_hgtg20n60c3.pdf Size:140K _fairchild_semi

G20N60B3D
G20N60B3D

HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Data Sheet December 2001 45A, 600V, UFS Series N-Channel IGBT Features This family of MOS gated high voltage switching devices • 45A, 600V, TC = 25oC combining the best features of MOSFETs and bipolar • 600V Switching SOA Capability transistors. These devices have the high input impedance of • Typical Fall Time. . . . . . . . . . . . . . . . 108n

4.3. hgtg20n60a4_hgtp20n60a4.pdf Size:136K _fairchild_semi

G20N60B3D
G20N60B3D

HGTG20N60A4, HGTP20N60A4 Data Sheet December 2001 600V, SMPS Series N-Channel IGBTs Features The HGTG20N60A4 and HGTP20N60A4 are MOS gated • >100kHz Operation at 390V, 20A high voltage switching devices combining the best features • 200kHz Operation at 390V, 12A of MOSFETs and bipolar transistors. These devices have the • 600V Switching SOA Capability high input impedance of a MOSFET a

Altri tipi di IGBT... G12N50C1 , G12N50C1D , G12N50E1 , G12N50E1D , G12N60C3D , G12N60D1 , G20N120E2 , G20N60B3 , FII50-12E , G30N60C3 , G30N60C3D , G34N100E2 , G3N60C , G3N60C3D , G40N60B3 , G6N40E , G6N40E1D .

 


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