STGB20NC60V IGBT. Curve Caratteristiche. Datasheet.

Tipo: STGB20NC60V

Struttura interna di un IGBT: N-Channel

Potenza massima dissipabile (Pc): 200W

Tensione tra collettore ed emettitore (Uce): 600V

Tensione di saturazione drain source (Ucesat): 1.7V

Massima tensione gate-source (Ueg):

Massima corrente continuativa (Ic): 20A

Temperatura di giunzione (Tj), °C:

Tempo di salita del fronte di corrente:

Capacità di uscita (Cc), pF:

Pack: D2PAK

Equivalente per i STGB20NC60V

STGB20NC60V - Potete trovare data sheet, manuali di istruzioni e altre informazioni per il vostro lavoro disponibili per il download in formato PDF

1.1. stgb20nc60v_stgp20nc60v_stgw20nc60v.pdf Size:405K _st

istics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

3.1. stgb20nb32lz(-1).pdf Size:462K _st

otection 20 V VGE Gate-Emitter Voltage CLAMPED V IC Collector Current (continuous) at Tc = 25°C 40 A IC Collector Current (continuous) at Tc = 100°C 30 A ICM ( ) Collector Current (pulsed) 80 A Eas Single Pulse Energy Tc = 25°C 700 mJ Ptot Total Dissipation at Tc =25°C 150 W Derating Factor 1 W/°C ESD ESD (Human Body Model) 4 KV Tstg Storage Temperature –65 to 175 °C Tj Max. Operating Junction Temperature 175 °C (•)Pulse width limited by safe operating area December 2002 1/11 STGB2

3.2. stgb20nb41lz.pdf Size:257K _st

r Voltage CLAMPED V IC Collector Current (continuous) at TC =25°C 40 A IC Collector Current (continuous) at TC =100°C 20 A ICM ( ) Collector Current (pulsed) 80 A Eas Single Pulse Energy Tc = 25°C700 mJ PTOT Total Dissipation at TC = 25°C 200 W Derating Factor 1.33 W/°C ESD ESD (Human Body Model) 8 KV Tstg Storage Temperature – 55 to 175 °C Tj Operating Junction Temperature ( ) Pulse width limited by safe operating area THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 0.7

3.3. stgb20nb32lz_stgb20nb32lz-1.pdf Size:501K _st

LZ - STGB20NB32LZ-1 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCES Collector-Emitter Voltage (VGS = 0) CLAMPED V VECR Reverse Battery Protection 20 V VGE Gate-Emitter Voltage CLAMPED V IC Collector Current (continuous) at Tc = 25°C 40 A IC Collector Current (continuous) at Tc = 100°C 30 A ICM ( ) Collector Current (pulsed) 80 A Eas Single Pulse Energy Tc = 25°C 700 mJ Ptot Total Dissipation at Tc =25°C 150 W Derating Factor 1 W/°C ESD ESD (Human Body Model) 4 KV Tstg Stor

3.4. stgb20nb37lz.pdf Size:382K _st

) CLAMPED V VECR Emitter-Collector Voltage 20 V VGE Gate-Emitter Voltage CLAMPED V IC Collector Current (continuos) at TC = 25°C 40 A IC Collector Current (continuos) at TC = 100°C 20 A ICM ( ) Collector Current (pulsed) 80 A Eas Single Pulse Energy Tc = 25°C 700 mJ PTOT Total Dissipation at TC = 25°C 200 W Derating Factor 1.33 W/°C ESD ESD (Human Body Model) 8 KV Tstg Storage Temperature –55 to 175 °C Tj Max. Operating Junction Temperature ( ) Pulse width limited by safe operating

Altri tipi di IGBT... STGB18N40LZ , STGB19NC60H , STGB19NC60HD , STGB19NC60K , STGB19NC60KD , STGB19NC60S , STGB19NC60W , STGB20NB41LZ , 10N50E1D , STGB30NC60K , STGB35N35LZ , STGB3NB60SD , STGB3NC120HD , STGB6NC60HD , STGB7NC60HD , STGB8NC60K , STGB8NC60KD .