IRG7IC28U Tutti i transistor e i loro equivalenti

 

IRG7IC28U IGBT. Curve Caratteristiche. Datasheet.

Tipo: IRG7IC28U

Struttura interna di un IGBT: N-Channel

Potenza massima dissipabile (Pc): 40W

Tensione tra collettore ed emettitore (Vce): 600V

Tensione di saturazione drain source (Vcesat): 1.95V

Massima tensione gate-source (Veg):

Massima corrente continuativa (Ic): 25A

Temperatura di giunzione (Tj), °C:

Tempo di salita del fronte di corrente:

Capacità di uscita (Cc), pF:

Pack: TO220AB

Equivalente per i IRG7IC28U

IRG7IC28U PDF doc:

1.1. irg7ic28u.pdf Size:282K _igbt_a

IRG7IC28U
IRG7IC28U

PD - 97562 IRG7IC28UPbF PDP TRENCH IGBT Key Parameters Features VCE min 600 V l Advanced Trench IGBT Technology VCE(ON) typ. @ IC = 40A 1.70 V l Optimized for Sustain and Energy Recovery circuits in PDP applications IRP max @ TC= 25°C 225 A l Low VCE(on) and Energy per Pulse (EPULSETM) TJ max 150 °C for improved panel efficiency l High repetitive peak current capability l

4.1. irg7ic30fd.pdf Size:298K _igbt_a

IRG7IC28U
IRG7IC28U

IRG7IC30FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • Low VCE(on) VCES = 600V • Zero VCE(on) temperature coefficient • 3µs Short Circuit Capability INOM = 24A • Square RBSOA VCE(on) typ. = 1.60V Benefits G • Benchmark Efficiency for Motor Control Applications E tSC 3μs, TJ(max) = 150°C • Rugged Transient Performance

5.1. irg7ia19u.pdf Size:287K _igbt_a

IRG7IC28U
IRG7IC28U

PD-96356 PDP TRENCH IGBT IRG7IA19UPbF Features Key Parameters VCE min 360 V l Advanced Trench IGBT Technology VCE(ON) typ. @ IC = 30A 1.49 V l Optimized for Sustain and Energy Recovery circuits in PDP applications IRP max @ TC= 25°C 170 A l Low VCE(on) and Energy per Pulse (EPULSETM) TJ max 150 °C for improved panel efficiency l High repetitive peak current capability l Lea

5.2. irg7i319u.pdf Size:297K _igbt_a

IRG7IC28U
IRG7IC28U

PD -96273 PDP TRENCH IGBT IRG7I319UPbF Key Parameters Features VCE min 330 V l Advanced Trench IGBT Technology VCE(ON) typ. @ IC = 30A 1.42 V l Optimized for Sustain and Energy Recovery IRP max @ TC= 25°C 170 A circuits in PDP applications TJ max 150 °C l Low VCE(on) and Energy per Pulse (EPULSETM) for improved panel efficiency l High repetitive peak current capability C l

5.3. irg7i313u.pdf Size:203K _igbt_a

IRG7IC28U
IRG7IC28U

PD - 97411 IRG7I313UPbF PDP TRENCH IGBT Key Parameters Features VCE min 330 V l Advanced Trench IGBT Technology VCE(ON) typ. @ IC = 20A 1.35 V l Optimized for Sustain and Energy Recovery circuits in PDP applications IRP max @ TC= 25°C 160 A l Low VCE(on) and Energy per Pulse (EPULSETM) TJ max 150 °C for improved panel efficiency l High repetitive peak current capability l L

5.4. irg7ia13u.pdf Size:171K _igbt_a

IRG7IC28U
IRG7IC28U

PD - 97636A IRG7IA13UPbF PDP TRENCH IGBT Key Parameters Features VCE min 360 V l Advanced Trench IGBT Technology VCE(ON) typ. @ IC = 20A 1.42 V l Optimized for Sustain and Energy Recovery IRP max @ TC= 25°C circuits in PDP applications 160 A l Low VCE(on) and Energy per Pulse (EPULSETM) TJ max 150 °C for improved panel efficiency l High repetitive peak current capability l L

Altri tipi di IGBT... IRG6I330U , IRG6IC30U , IRG6S320U , IRG6S330U , IRG7I313U , IRG7I319U , IRG7IA13U , IRG7IA19U , IRG7R313U , IRG7P313U , IRG7PA19U , IRG7PC28U , IRG7PH30K10 , IRG7PH30K10D , IRG7PH35U , IRG7PH35UD , IRG7PH35UD1 .

 


IRG7IC28U
  IRG7IC28U
  IRG7IC28U
  IRG7IC28U
 
IRG7IC28U
  IRG7IC28U
  IRG7IC28U
  IRG7IC28U
 

social 

LIST

Ultimo aggiornamento

IGBT VS-GT75NP120N | VS-GT50TP60N | VS-GT50TP120N | VS-GT400TH60N | VS-GT400TH120U | VS-GT400TH120N | VS-GT300YH120N | VS-GT300FD060N | VS-GT175DA120U | VS-GT140DA60U |

Tra 2 e 10 caratteri (Solo numeri e lettere)