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IRGP4086 IGBT. Curve Caratteristiche. Datasheet.

Tipo: IRGP4086

Struttura interna di un IGBT: N-Channel

Potenza massima dissipabile (Pc): 160W

Tensione tra collettore ed emettitore (Uce): 300V

Tensione di saturazione drain source (Ucesat): 2.10V

Massima tensione gate-source (Ueg):

Massima corrente continuativa (Ic): 70A

Temperatura di giunzione (Tj), °C:

Tempo di salita del fronte di corrente:

CapacitĂ  di uscita (Cc), pF:

Pack: TO247

Equivalente per i IRGP4086

IRGP4086 PDF doc:

5.1. irgp450ud2.pdf Size:41K _international_rectifier

IRGP4086
IRGP4086

Preliminary Data Sheet PD - 9.1065 IRGP450UD2 INSULATED GATE BIPOLAR TRANSISTOR UltraFast CoPack IGBT WITH ULTRAFAST SOFT RECOVERY DIODE Features C VCES = 500V • Switching-loss rating includes all "tail" losses • HEXFREDTM soft ultrafast diodes • Optimized for high operating frequency (over 5kHz) VCE(sat) ? 3.2V G @VGE = 15V, IC = 33A E n-channel Description Co-packaged IGBTs are

5.2. irgp420u.pdf Size:109K _international_rectifier

IRGP4086
IRGP4086

PD - 9.781 IRGP420U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features C • Switching-loss rating includes all "tail" losses VCES = 500V • Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve VCE(sat) ? 3.0V G @VGE = 15V, IC = 7.5A E n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have high

5.3. irgp430u.pdf Size:108K _international_rectifier

IRGP4086
IRGP4086

PD - 9.780 IRGP430U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT .A=JKHAI C • Switching-loss rating includes all "tail" losses VCES = 500V • Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve VCE(sat) ? 3.0V G @VGE = 15V, IC = 15A E n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have highe

5.4. irgp450lc.pdf Size:159K _international_rectifier

IRGP4086
IRGP4086

PD - 9.1231 IRFP450LC HEXFET® Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement VDSS = 500V Enhanced 30V Vgs Rating Reduced Ciss, Coss, Crss RDS(on) = 0.40? Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated ID = 14A Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional MOSFE

5.5. irgp440ud2.pdf Size:213K _international_rectifier

IRGP4086
IRGP4086

PD - 9.1064 IRGP440UD2 INSULATED GATE BIPOLAR TRANSISTOR UltraFast CoPack IGBT WITH ULTRAFAST SOFT RECOVERY DIODE Features C VCES = 500V • Switching-loss rating includes all "tail" losses • HEXFREDTM soft ultrafast diodes • Optimized for high operating frequency (over 5kHz) VCE(sat) ? 3.0V See Fig. 1 for Current vs. Frequency curve G @VGE = 15V, IC = 22A E n-channel Description C

5.6. irgp450u.pdf Size:106K _international_rectifier

IRGP4086
IRGP4086

PD - 9.1033A IRGP450U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features C • Switching-loss rating includes all "tail" losses VCES = 500V • Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve VCE(sat) ? 3.2V G @VGE = 15V, IC = 33A E n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have hi

5.7. irgp440u.pdf Size:108K _international_rectifier

IRGP4086
IRGP4086

PD - 9.779 IRGP440U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT .A=JKHAI C • Switching-loss rating includes all "tail" losses VCES = 500V • Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve VCE(sat) ? 3.0V G @VGE = 15V, IC = 22A E n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have highe

5.8. irgp460lc.pdf Size:154K _international_rectifier

IRGP4086
IRGP4086

PD - 9.1232 IRFP460LC HEXFET® Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating VDSS = 500V Reduced Ciss, Coss, Crss Isolated Central Mounting Hole RDS(on) = 0.27? Dynamic dv/dt Rated Repetitive Avalanche Rated ID = 20A Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional MOSFE

5.9. irgp430ud2.pdf Size:207K _international_rectifier

IRGP4086
IRGP4086

PD - 9.1063 IRGP430UD2 INSULATED GATE BIPOLAR TRANSISTOR UltraFast CoPack IGBT WITH ULTRAFAST SOFT RECOVERY DIODE Features C VCES = 500V • Switching-loss rating includes all "tail" losses • HEXFREDTM soft ultrafast diodes • Optimized for high operating frequency (over 5kHz) VCE(sat) ? 3.0V See Fig. 1 for Current vs. Frequency curve G @VGE = 15V, IC = 15A E n-channel Description

Altri tipi di IGBT... IRGP4066D , IRGP4066D-E , IRGP4066-E , IRGP4068D , IRGP4068D-E , IRGP4069 , IRGP4069D , IRGP4072D , IRG4BC30W , IRGP50B60PD , IRGP50B60PD1 , IRGP50B60PD1-E , IRGPS40B120U , IRGPS40B120UD , IRGPS60B120KD , IRGR3B60KD2 , IRGS10B60KD .

 


IRGP4086
  IRGP4086
  IRGP4086
  IRGP4086
 
IRGP4086
  IRGP4086
  IRGP4086
  IRGP4086
 

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