RJP30H1DPD Tutti i transistor e i loro equivalenti

 

RJP30H1DPD IGBT. Curve Caratteristiche. Datasheet.

Tipo: RJP30H1DPD

Struttura interna di un IGBT: N-Channel

Potenza massima dissipabile (Pc):

Tensione tra collettore ed emettitore (Vce): 360V

Tensione di saturazione drain source (Vcesat): 1.5V

Massima tensione gate-source (Veg):

Massima corrente continuativa (Ic): 30A

Temperatura di giunzione (Tj), °C:

Tempo di salita del fronte di corrente: 150

Capacità di uscita (Cc), pF:

Pack: TO252

Equivalente per i RJP30H1DPD

RJP30H1DPD PDF doc:

1.1. r07ds0466ej_rjp30h1dpp.pdf Size:151K _renesas

RJP30H1DPD
RJP30H1DPD

Preliminary Datasheet RJP30H1DPP-M0 R07DS0466EJ0200 Silicon N Channel IGBT Rev.2.00 High speed power switching Jun 15, 2011 Features ? Trench gate and thin wafer technology (G6H-II series) ? High speed switching: tr =80 ns typ., tf = 150 ns typ. ? Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ. ? Low leak current: ICES = 1 ?A max. ? Isolated package TO-220FL

1.2. r07ds0465ej_rjp30h1dpd.pdf Size:151K _renesas

RJP30H1DPD
RJP30H1DPD

Preliminary Datasheet RJP30H1DPD R07DS0465EJ0200 Silicon N Channel IGBT Rev.2.00 High speed power switching Jun 15, 2011 Features ? Trench gate and thin wafer technology (G6H-II series) ? High speed switching: tr = 80 ns typ., tf = 150 ns typ. ? Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ. ? Low leak current: ICES = 1 ?A max. Outline RENESAS Package co

1.3. rjp30h1dpp-m0.pdf Size:130K _igbt

RJP30H1DPD
RJP30H1DPD

 Preliminary Datasheet RJP30H1DPP-M0 R07DS0466EJ0200 Silicon N Channel IGBT Rev.2.00 High speed power switching Jun 15, 2011 Features  Trench gate and thin wafer technology (G6H-II series)  High speed switching: tr =80 ns typ., tf = 150 ns typ.  Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ.  Low leak current: ICES = 1 A max.  Isolated p

1.4. rjp30h1dpd.pdf Size:130K _igbt

RJP30H1DPD
RJP30H1DPD

 Preliminary Datasheet RJP30H1DPD R07DS0465EJ0200 Silicon N Channel IGBT Rev.2.00 High speed power switching Jun 15, 2011 Features  Trench gate and thin wafer technology (G6H-II series)  High speed switching: tr = 80 ns typ., tf = 150 ns typ.  Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ.  Low leak current: ICES = 1 A max. Outline RENES

Altri tipi di IGBT... RJH60M3DPP-M0 , RJH60M3DPQ-A0 , RJH60M5DPQ-A0 , RJH60M6DPQ-A0 , RJH60M7DPQ-A0 , RJH60T4DPQ-A0 , RJP30E2DPP-M0 , RJP30E3DPP-M0 , SGW30N60HS , RJP30H1DPP-M0 , RJP30H2DPK-M0 , RJP30K3DPP-M0 , RJP6065DPM , RJP60D0DPE , RJP60D0DPP-M0 , RJP60F0DPE , RJP60F0DPM .

 


RJP30H1DPD
  RJP30H1DPD
  RJP30H1DPD
  RJP30H1DPD
 
RJP30H1DPD
  RJP30H1DPD
  RJP30H1DPD
  RJP30H1DPD
 

social 

LIST

Ultimo aggiornamento

IGBT FF1000R17IE4D_B2 | FF1000R17IE4 | FD-DF80R12W1H3_B52 | FD900R12IP4DV | FD900R12IP4D | FD800R33KL2C-K_B5 | FD800R33KF2C-K | FD800R33KF2C | FD800R17KF6C_B2 | FD800R17KE3_B2 |

Tra 2 e 10 caratteri (Solo numeri e lettere)