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BT15N120ANF IGBT. Curve Caratteristiche. Datasheet.

Tipo: BT15N120ANF

Struttura interna di un IGBT: N-Channel

Potenza massima dissipabile (Pc): 186

Tensione tra collettore ed emettitore (Uce): 1200

Tensione di saturazione drain source (Ucesat): 2.7

Massima tensione gate-source (Ueg): 20

Massima corrente continuativa (Ic): 30

Temperatura di giunzione (Tj), °C: 150

Tempo di salita del fronte di corrente: 38.4

Capacità di uscita (Cc), pF: 67

Pack: TO3PN

Equivalente per i BT15N120ANF

BT15N120ANF PDF doc:

1.1. bt15n120anf.pdf Size:254K _crhj

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Silicon FS Planar IGBT R ○ BT15N120ANF General Description: VCES 1200 V Using HUAJING's proprietary trench design and advanced FS(field IC 25 A stop) technology, the 1200V Trench FS-IGBT offers superior conduction Ptot (TC=25℃) 186 W and switching performances, high avalanche ruggedness. VCE(SAT) 2.2 V Features: Trench FS Technology, Positive temperature coef

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Silicon FS Planar IGBT R ○ BT15N60A9F General Description: VCES 600 V Using HUAJING's proprietary Planar design and advanced FS IC 15 A technology, the 600V FSIGBT offers superior conduction and switching Ptot TC=25℃) 25 W performances, high avalanche ruggedness and easy parallel operation. VCE(SAT) 2.1 V Features: FS Planar Technology, Positive temperature coeff

Altri tipi di IGBT... FGW50N60VD(50G60VD) , FGW75N60H(75G60H) , FGW75N60HD(75G60HD) , FGW85N60RB(85G60RB) , 1MBH60-100 , FGL40N120AN , BRG15N120D , BRG20N120D , CT60AM-18F , SSIG15N135H , SSIG20N135H , BT25T120ANF , BT15T120ANF , BT15N120ANF , BT40N60BNF , BT30N60ANF , BT50N60ANF .

 


BT15N120ANF
  BT15N120ANF
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BT15N120ANF
  BT15N120ANF
  BT15N120ANF
  BT15N120ANF
 

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IGBT BT15N60A9F | BT50N60ANF | BT30N60ANF | BT40N60BNF | BT15N120ANF | BT15T120ANF | BT25T120ANF | SSIG20N135H | SSIG15N135H | BRG25N120D |

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