Tutti i transistor e i loro equivalenti

 

BT40N60BNF IGBT. Curve Caratteristiche. Datasheet.

Tipo: BT40N60BNF

Struttura interna di un IGBT: N-Channel

Potenza massima dissipabile (Pc): 312

Tensione tra collettore ed emettitore (Uce): 600

Tensione di saturazione drain source (Ucesat): 2.6

Massima tensione gate-source (Ueg): 20

Massima corrente continuativa (Ic): 40

Temperatura di giunzione (Tj), °C: 150

Tempo di salita del fronte di corrente: 47

Capacità di uscita (Cc), pF: 169

Pack: TO3PN

Equivalente per i BT40N60BNF

BT40N60BNF PDF doc:

1.1. bt40n60bnf.pdf Size:106K _crhj

BT40N60BNF
BT40N60BNF

Silicon FS Planar IGBT R ○ BT40N60BNF General Description: VCES 600 V Using HUAJING's proprietary Planar design and advanced FS IC 40 A technology, the 600V FSIGBT offers superior conduction and switching Ptot (TC=25℃) 312 W performances, high avalanche ruggedness and easy parallel operation. VCE(SAT) 2.2 V Features: FS Planar Technology, Positive temperature

Altri tipi di IGBT... FGW50N60VD(50G60VD) , FGW75N60H(75G60H) , FGW75N60HD(75G60HD) , FGW85N60RB(85G60RB) , 1MBH60-100 , FGL40N120AN , BRG15N120D , BRG20N120D , CT60AM-18F , SSIG15N135H , SSIG20N135H , BT25T120ANF , BT15T120ANF , BT15N120ANF , BT40N60BNF , BT30N60ANF , BT50N60ANF .

 


BT40N60BNF
  BT40N60BNF
  BT40N60BNF
  BT40N60BNF
 
BT40N60BNF
  BT40N60BNF
  BT40N60BNF
  BT40N60BNF
 

social 

LIST

Ultimo aggiornamento

IGBT BT15N60A9F | BT50N60ANF | BT30N60ANF | BT40N60BNF | BT15N120ANF | BT15T120ANF | BT25T120ANF | SSIG20N135H | SSIG15N135H | BRG25N120D |

Tra 2 e 10 caratteri (Solo numeri e lettere)