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BT40N60BNF IGBT. Curve Caratteristiche. Datasheet.

Tipo: BT40N60BNF

Struttura interna di un IGBT: N-Channel

Potenza massima dissipabile (Pc): 312

Tensione tra collettore ed emettitore (Vce): 600

Tensione di saturazione drain source (Vcesat): 2.6

Massima tensione gate-source (Veg): 20

Massima corrente continuativa (Ic): 40

Temperatura di giunzione (Tj), °C: 150

Tempo di salita del fronte di corrente: 47

Capacità di uscita (Cc), pF: 169

Pack: TO3PN

Equivalente per i BT40N60BNF

BT40N60BNF PDF doc:

1.1. bt40n60bnf.pdf Size:105K _igbt_a

BT40N60BNF
BT40N60BNF

Silicon FS Planar IGBT R ○ BT40N60BNF General Description: VCES 600 V Using HUAJING's proprietary Planar design and advanced FS IC 40 A technology, the 600V FSIGBT offers superior conduction and switching Ptot (TC=25℃) 312 W performances, high avalanche ruggedness and easy parallel operation. VCE(SAT) 2.2 V Features: FS Planar Technology, Positive temperature

1.2. bt40n60bnf.pdf Size:106K _crhj

BT40N60BNF
BT40N60BNF

Silicon FS Planar IGBT R ○ BT40N60BNF General Description: VCES 600 V Using HUAJING's proprietary Planar design and advanced FS IC 40 A technology, the 600V FSIGBT offers superior conduction and switching Ptot (TC=25℃) 312 W performances, high avalanche ruggedness and easy parallel operation. VCE(SAT) 2.2 V Features: FS Planar Technology, Positive temperature

Altri tipi di IGBT... BRG15N120D , BRG20N120D , BRG25N120D , SSIG15N135H , SSIG20N135H , BT25T120ANF , BT15T120ANF , BT15N120ANF , G7N60C3D , BT30N60ANF , BT50N60ANF , BT15N60A9F , AP25G45EM , AP25G45GEM , AP28G45GEM , AP20G45EH , AP20G45EJ .

 


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