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BT50N60ANF IGBT. Curve Caratteristiche. Datasheet.

Tipo: BT50N60ANF

Struttura interna di un IGBT: N-Channel

Potenza massima dissipabile (Pc): 312

Tensione tra collettore ed emettitore (Uce): 600

Tensione di saturazione drain source (Ucesat): 2.5

Massima tensione gate-source (Ueg): 20

Massima corrente continuativa (Ic): 50

Temperatura di giunzione (Tj), °C: 150

Tempo di salita del fronte di corrente: 49

Capacità di uscita (Cc), pF: 175

Pack: TO3PN

Equivalente per i BT50N60ANF

BT50N60ANF PDF doc:

1.1. bt50n60anf.pdf Size:105K _igbt_a

BT50N60ANF
BT50N60ANF

Silicon FS Planar IGBT R ○ BT50N60ANF General Description: VCES 600 V Using HUAJING's proprietary Trench design and advanced FS IC 50 A technology, the 600V FS IGBT offers superior conduction and switching Ptot TC=25℃) 312 W performances, high avalanche ruggedness and easy parallel operation. VCE(SAT) 1.7 V Features: FS Trench Technology, Positive temperature c

1.2. bt50n60anf.pdf Size:106K _crhj

BT50N60ANF
BT50N60ANF

Silicon FS Planar IGBT R ○ BT50N60ANF General Description: VCES 600 V Using HUAJING's proprietary Trench design and advanced FS IC 50 A technology, the 600V FS IGBT offers superior conduction and switching Ptot TC=25℃) 312 W performances, high avalanche ruggedness and easy parallel operation. VCE(SAT) 1.7 V Features: FS Trench Technology, Positive temperature c

Altri tipi di IGBT... BRG25N120D , SSIG15N135H , SSIG20N135H , BT25T120ANF , BT15T120ANF , BT15N120ANF , BT40N60BNF , BT30N60ANF , IKW50N60H3 , BT15N60A9F , AP25G45EM , AP25G45GEM , AP28G45GEM , AP20G45EH , AP20G45EJ , TGPF30N40P , TGPF30N43P .

 


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