PSMN5R0-100PS
MOSFET. Curve Caratteristiche. Datasheet. Tipo: PSMN5R0-100PS
Struttura del transistor: MOSFET
Canale di conduzione: N
Potenza massima dissipabile (Pd): 338
Tensione di blocco drain source (Uds): 100V
Massima tensione gate-source (Ugs):
Massima corrente continuativa (Id): 120
Temperatura di giunzione (Tj), °C:
Tempo di salita del fronte di corrente (tr):
Capacità di uscita (Cd), pf:
Resistenza di uscita (Rds), Ohm: 0.005
Pack: TO220AB
Equivalente per i PSMN5R0-100PS
PSMN5R0-100PS
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1.1. psmn5r0-100es.pdf  Size:238K _philips2  |
 | ate Tj = 100 °C; see Figure 12
resistance
[2]
VGS =10V; ID =25A; - 4.3 5 m?
Tj =25°C; see Figure 13
PSMN5R0-100ES
NXP Semiconductors
N-channel 100 V 5 m? standard level MOSFET in I2PAK
Table 1. Quick reference data …continued
Symbol Parameter Conditions Min Typ Max Unit
Dynamic characteristics
QGD gate-drain charge VGS =10V; ID =75A; - 49 - nC
VDS =50 V; see Figure 14;
QG(tot) total gate charge - 170 - nC
see Figure 15
Avalanche ruggedness
EDS(AL)S non-repetitive VGS =10V; Tj(in |
1.2. psmn5r0-100ps.pdf Size:245K _philips2  |
 | state Tj = 100 °C; see Figure 13;
resistance see Figure 12
[2]
VGS =10V; ID =25A; - 4.3 5 m?
Tj =25°C; see Figure 13
PSMN5R0-100PS
NXP Semiconductors
N-channel 100 V 5 m? standard level MOSFET in TO-220
Table 1. Quick reference data …continued
Symbol Parameter Conditions Min Typ Max Unit
Dynamic characteristics
QGD gate-drain charge VGS =10V; ID =75A; - 49 - nC
VDS =50 V; see Figure 14;
QG(tot) total gate charge - 170 - nC
see Figure 15
Avalanche ruggedness
EDS(AL)S non-repetiti |
2.1. psmn5r0-80ps.pdf Size:224K _philips2  |
 | ics
RDSon drain-source VGS =10V; ID =15 A; [1] - 3.7 4.7 m?
on-state resistance Tj =25°C;
[1] Measured 3 mm from package.
PSMN5R0-80PS
NXP Semiconductors
N-channel 80 V 4.7 m? standard level MOSFET
2. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 G gate
mb D
2 D drain
3 S source
G
mb D mounting base; connected to
drain
mbb076 S
1 2 3
SOT78
(TO-220AB; SC-46)
3. Ordering information
Table 3. Ordering information |
2.2. psmn5r0-30yl.pdf Size:231K _philips2  |
 | 5 m?
on-state Tj =25°C
resistance
Dynamic characteristics
QGD gate-drain charge VGS =4.5V; ID =10A; - 3.8 - nC
VDS =12 V; see Figure 14;
see Figure 15
PSMN5R0-30YL
NXP Semiconductors
N-channel 30 V 5 m? logic level MOSFET in LFPAK
Table 1. Quick reference data …continued
Symbol Parameter Conditions Min Typ Max Unit
QG(tot) total gate charge VGS =4.5V; ID =10A; - 14.1 - nC
VDS =12 V; see Figure 14
Avalanche ruggedness
EDS(AL)S non-repetitive VGS =10V; Tj(init) =25°C; - - 32 mJ
dr |
Altri tipi di transistor... PSMN4R3-30PL
, PSMN4R3-80ES
, PSMN4R3-80PS
, PSMN4R4-80PS
, PSMN4R5-30YLC
, PSMN4R5-40PS
, PSMN4R6-60PS
, PSMN5R0-100ES
, IRLML2502
, PSMN5R0-30YL
, PSMN5R0-80PS
, PSMN5R5-60YS
, PSMN5R6-100PS
, PSMN5R6-100XS
, PSMN5R8-30LL
, PSMN5R8-40YS
, PSMN5R9-30YL
.
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