PSMN5R6-100PS MOSFET. Curve Caratteristiche. Datasheet.

Tipo: PSMN5R6-100PS

Struttura del transistor: MOSFET

Canale di conduzione: N

Potenza massima dissipabile (Pd): 306

Tensione di blocco drain source (Uds): 100V

Massima tensione gate-source (Ugs):

Massima corrente continuativa (Id): 100

Temperatura di giunzione (Tj), °C:

Tempo di salita del fronte di corrente (tr):

Capacità di uscita (Cd), pf:

Resistenza di uscita (Rds), Ohm: 0.0056

Pack: TO220AB

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1.1. psmn5r6-100ps.pdf Size:217K _philips2

e Figure 12 resistance Dynamic characteristics QGD gate-drain charge VGS =10V; ID =80A; VDS =50V; - 43 - nC see Figure 13; see Figure 14 QG(tot) total gate charge - 141 - nC Avalanche Ruggedness EDS(AL)S non-repetitive VGS =10V; Tj(init) =25°C; - - 468 mJ drain-source ID = 100 A; Vsup ? 100 V; avalanche energy RGS =50?; unclamped [1] Continuous current limited by package. PSMN5R6-100PS NXP Semiconductors N-channel 100 V 5.6 m? standard level MOSFET in TO220 2. Pinning information

4.1. psmn5r8-30ll.pdf Size:396K _philips2

0A; - 6.1 8 m? on-state Tj =25°C; see Figure 12 resistance VGS =10V; ID =10A; - - 7.7 m? Tj = 100 °C; see Figure 13 VGS =10V; ID =10A; - 5 5.8 m? Tj =25°C; see Figure 12; see Figure 13 PSMN5R8-30LL NXP Semiconductors N-channel QFN3333 30 V 5.8 m? logic level MOSFET Table 1. Quick reference data …continued Symbol Parameter Conditions Min Typ Max Unit Dynamic characteristics QGD gate-drain charge VGS =10V; ID =15A; - 3.4 - nC VDS =15 V; see Figure 14; QG(tot) total gate charge - 2

4.2. psmn5r0-100es.pdf Size:238K _philips2

ate Tj = 100 °C; see Figure 12 resistance [2] VGS =10V; ID =25A; - 4.3 5 m? Tj =25°C; see Figure 13 PSMN5R0-100ES NXP Semiconductors N-channel 100 V 5 m? standard level MOSFET in I2PAK Table 1. Quick reference data …continued Symbol Parameter Conditions Min Typ Max Unit Dynamic characteristics QGD gate-drain charge VGS =10V; ID =75A; - 49 - nC VDS =50 V; see Figure 14; QG(tot) total gate charge - 170 - nC see Figure 15 Avalanche ruggedness EDS(AL)S non-repetitive VGS =10V; Tj(in

4.3. psmn5r0-100ps.pdf Size:245K _philips2

state Tj = 100 °C; see Figure 13; resistance see Figure 12 [2] VGS =10V; ID =25A; - 4.3 5 m? Tj =25°C; see Figure 13 PSMN5R0-100PS NXP Semiconductors N-channel 100 V 5 m? standard level MOSFET in TO-220 Table 1. Quick reference data …continued Symbol Parameter Conditions Min Typ Max Unit Dynamic characteristics QGD gate-drain charge VGS =10V; ID =75A; - 49 - nC VDS =50 V; see Figure 14; QG(tot) total gate charge - 170 - nC see Figure 15 Avalanche ruggedness EDS(AL)S non-repetiti

4.4. psmn5r0-80ps.pdf Size:224K _philips2

ics RDSon drain-source VGS =10V; ID =15 A; [1] - 3.7 4.7 m? on-state resistance Tj =25°C; [1] Measured 3 mm from package. PSMN5R0-80PS NXP Semiconductors N-channel 80 V 4.7 m? standard level MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 3 S source G mb D mounting base; connected to drain mbb076 S 1 2 3 SOT78 (TO-220AB; SC-46) 3. Ordering information Table 3. Ordering information

4.5. psmn5r0-30yl.pdf Size:231K _philips2

5 m? on-state Tj =25°C resistance Dynamic characteristics QGD gate-drain charge VGS =4.5V; ID =10A; - 3.8 - nC VDS =12 V; see Figure 14; see Figure 15 PSMN5R0-30YL NXP Semiconductors N-channel 30 V 5 m? logic level MOSFET in LFPAK Table 1. Quick reference data …continued Symbol Parameter Conditions Min Typ Max Unit QG(tot) total gate charge VGS =4.5V; ID =10A; - 14.1 - nC VDS =12 V; see Figure 14 Avalanche ruggedness EDS(AL)S non-repetitive VGS =10V; Tj(init) =25°C; - - 32 mJ dr

4.6. psmn5r8-40ys.pdf Size:223K _philips2

Figure 2 - - 89 W Tj junction temperature -55 - 175 °C Static characteristics RDSon drain-source on-state VGS =10V; ID =15A; - - 7.7 m? resistance Tj = 100 °C; see Figure 12 VGS =10V; ID =15A; - 4.4 5.7 m? Tj =25°C; see Figure 13 PSMN5R8-40YS NXP Semiconductors N-channel LFPAK 40 V 5.7 m? standard level MOSFET Table 1. Quick reference data …continued Symbol Parameter Conditions Min Typ Max Unit Dynamic characteristics QGD gate-drain charge VGS =10V; ID =75A; - 7.8 - nC VDS =20 V;

4.7. psmn5r5-60ys.pdf Size:251K _philips2

ation Tj junction temperature -55 - 175 °C Avalanche ruggedness EDS(AL)S non-repetitive VGS =10V; Tj(init) =25°C; - - 170 mJ drain-source ID = 100 A; Vsup ? 60 V; avalanche energy RGS =50?; unclamped Dynamic characteristics QGD gate-drain charge VGS =10V; ID =75 A; - 11.2 - nC VDS = 30 V; see Figure 14 QG(tot) total gate charge - 56 - nC and 15 PSMN5R5-60YS NXP Semiconductors N-channel LFPAK 60 V, 5.2 m? standard level FET Table 1. Quick reference …continued Symbol Parameter Co

Altri tipi di transistor... PSMN4R5-30YLC , PSMN4R5-40PS , PSMN4R6-60PS , PSMN5R0-100ES , PSMN5R0-100PS , PSMN5R0-30YL , PSMN5R0-80PS , PSMN5R5-60YS , BUK455-200A , PSMN5R6-100XS , PSMN5R8-30LL , PSMN5R8-40YS , PSMN5R9-30YL , PSMN6R0-25YLB , PSMN6R0-30YL , PSMN6R0-30YLB , PSMN6R5-25YLC .