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TPC8129
MOSFET. Curve Caratteristiche. Datasheet. Tipo: TPC8129
Struttura del transistor: MOSFET
Canale di conduzione: P
Potenza massima dissipabile (Pd): 1.9
Tensione di blocco drain source (Uds): 30V
Massima tensione gate-source (Ugs):
Massima corrente continuativa (Id): 9
Temperatura di giunzione (Tj), °C:
Tempo di salita del fronte di corrente (tr):
Capacità di uscita (Cd), pf:
Resistenza di uscita (Rds), Ohm: 0.022
Pack: SOP8
Equivalente per i TPC8129
TPC8129
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1.1. tpc8129_en_datasheet_100825.pdf Size:260K _toshiba2 |
| ise specified)
Characteristics Symbol Rating Unit
Drain-source voltage VDSS -30 V
Gate-source voltage VGSS -25/+20
Drain current (DC) (Note 1) ID -9 A
Drain current (pulsed) (Note 1) IDP -36
Power dissipation (t = 10 s) (Note 2) PD 1.9 W
Power dissipation (t = 10 s) (Note 3) PD 1.0 W
Single-pulse avalanche energy (Note 4) EAS 21 mJ
Avalanche current IAR -9 A
Channel temperature Tch 150 ?
Storage temperature Tstg -55 to 150
Note: Using continuously under heavy loads (e.g. the applica |
4.1. tpc8124_en_datasheet_091116.pdf Size:257K _toshiba2 |
| emperature range Tstg -55 to 150 °C 8 7 6 5
Note 1, Note 2, Note 3 : See the next page.
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating 1 2 3 4
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon review |
4.2. tpc8128_en_datasheet_091120.pdf Size:216K _toshiba2 |
| emperature range Tstg -55 to 150 °C
8 7 6 5
Note 1, Note 2, Note 3 : See the next page.
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings. 1 2 3 4
Please design the appropriate reliability upon revi |
4.3. tpc8123_en_datasheet_090727.pdf Size:272K _toshiba2 |
| te 1) IAR -11 A
Repetitive avalanche energy
8 7 6 5
EAR 0.04 mJ
(Note 2a) (Note 4)
Channel temperature Tch 150 °C
Storage temperature range Tstg -55 to 150 °C
Note 1, Note 2, Note 3 and Note 4: See the next page.
1 2 3 4
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operatin |
4.4. tpc8126_en_datasheet_091119.pdf Size:216K _toshiba2 |
| mperature range Tstg -55 to 150 °C
8 7 6 5
Note 1, Note 2, Note 3 : See the next page.
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings. 1 2 3 4
Please design the appropriate reliability upon revie |
4.5. tpc8127_en_datasheet_091120.pdf Size:215K _toshiba2 |
| perature range Tstg -55 to 150 °C
8 7 6 5
Note 1, Note 2, Note 3 : See the next page.
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings. 1 2 3 4
Please design the appropriate reliability upon review |
4.6. tpc8125_en_datasheet_091117.pdf Size:221K _toshiba2 |
|
Storage temperature range Tstg -55 to 150 °C
Circuit Configuration
Note 1, Note 2, Note 3 : See the next page.
8 7 6 5
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appro |
4.7. tpc8120_en_datasheet_090727.pdf Size:289K _toshiba2 |
| he energy
EAR 0.03 mJ
(Note 2a) (Note 4)
Channel temperature Tch 150 °C
Circuit Configuration
Storage temperature range Tstg -55 to 150 °C
8 7 6 5
Note 1, Note 2, Note 3 and Note 4: See the next page.
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating
temperature/curr |
Altri tipi di transistor... TPC8092
, TPC8120
, TPC8123
, TPC8124
, TPC8125
, TPC8126
, TPC8127
, TPC8128
, BS170
, TPC8132
, TPC8133
, TPC8134
, TPC8221-H
, TPC8223-H
, TPC8224-H
, TPC8407
, TPC8408
.
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