2SK2986 MOSFET. Curve Caratteristiche. Datasheet.

Tipo: 2SK2986

Struttura del transistor: MOSFET

Canale di conduzione: N

Potenza massima dissipabile (Pd): 100

Tensione di blocco drain source (Uds): 60V

Massima tensione gate-source (Ugs):

Massima corrente continuativa (Id): 55

Temperatura di giunzione (Tj), °C:

Tempo di salita del fronte di corrente (tr):

Capacità di uscita (Cd), pf:

Resistenza di uscita (Rds), Ohm:

Pack: TO220FL/SM

Equivalente per i 2SK2986

2SK2986 - Potete trovare data sheet, manuali di istruzioni e altre informazioni per il vostro lavoro disponibili per il download in formato PDF

1.1. 2sk2986.pdf Size:433K _toshiba

~150 °C Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case Rth (ch-c) 1.25 °C / W Thermal resistance, channel to Rth (ch-a) 83.3 °C / W ambient Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = 25 V, Tch = 25°C (initial), L = 236 µH, IAR = 55 A, RG = 25 ? Note 3: Repetitive rating: Pulse width limited by maximum channel temperature JEDEC ? This transistor is an electrostatic sensitive

4.1. 2sk2987.pdf Size:426K _toshiba

-55~150 °C Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case Rth (ch-c) 0.833 °C / W Thermal resistance, channel to Rth (ch-a) 50 °C / W ambient Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = 25 V, Tch = 25°C (initial), L = 136 µH, IAR = 70 A, RG = 25 ? Note 3: Repetitive rating: Pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Pl

4.2. 2sk2989.pdf Size:136K _toshiba

the channel temperature is below 150°C. This transistor is an electrostatic sensitive device. Please handle with caution. 1 2002-09-04 2SK2989 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V — — ±10 µA Drain cut-off current IDSS VDS = 50 V, VGS = 0 V — — 100 µA Drain-source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 50 — — V Gate threshold voltage Vth VDS = 10 V, ID = 1 m

4.3. 2sk2985.pdf Size:424K _toshiba

istics Symbol Max Unit Thermal resistance, channel to case Rth (ch-c) 2.78 °C / W Thermal resistance, channel to Rth (ch-a) 62.5 °C / W ambient Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = 25 V, Tch = 25°C (initial), L = 471 µH, IAR = 45 A, RG = 25 ? Note 3: Repetitive rating: Pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution. 1 2002-07-31 2S

4.4. 2sk2980.pdf Size:81K _renesas

own voltage V(BR)DSS 30 — — V ID = 100 µA, VGS = 0 Gate to source breakdown voltage V(BR)GSS +12 — — V IG = +100 µA, VDS = 0 –10 — — V IG = –100 µA, VDS = 0 Zero gate voltage drain current IDSS — — 1.0 µA VDS = 30 V, VGS = 0 Gate to source leak current IGSS — — ±5.0 µA VGS = ±8 V, VDS = 0 Gate to source cutoff voltage VGS(off) 0.5 — 1.5 V ID = 10 µA, VDS = 5 V Static drain to source on state RDS(on) — 0.2 0.28 ? ID = 500 mA, VGS = 4 V Note3 resistance Static drain to source on st

Altri tipi di transistor... 2SK2920 , 2SK2949 , 2SK2952 , 2SK2961 , 2SK2965 , 2SK2967 , 2SK2972 , 2SK2985 , IRF150 , 2SK2991 , 2SK2993 , 2SK2995 , 2SK2996 , 2SK3051 , 2SK3067 , 2SK3068 , 2SK3084 .