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2SK3569 MOSFET. Curve Caratteristiche. Datasheet.

Tipo: 2SK3569

Struttura del transistor: MOSFET

Canale di conduzione: N

Potenza massima dissipabile (Pd): 45

Tensione di blocco drain source (Vds): 600

Massima tensione gate-source (Vgs): 30

Massima corrente continuativa (Id): 10

Temperatura di giunzione (Tj), Β°C: 150

Tempo di salita del fronte di corrente (tr): 22

CapacitΓ  di uscita (Cd), pf: 180

Resistenza di uscita (Rds), Ohm: 0.75

Pack: TO220SIS

Equivalente per i 2SK3569

2SK3569 PDF doc:

1.1. 2sk3569.pdf Size:236K _toshiba

2SK3569
2SK3569

2SK3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSVI) 2SK3569 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.54? (typ.) • High forward transfer admittance: |Yfs| = 8.5S (typ.) • Low leakage current: IDSS = 100 ?A (VDS = 600 V) • Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta =

4.1. 2sk3561.pdf Size:227K _toshiba

2SK3569
2SK3569

2SK3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSVI) 2SK3561 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.75? (typ.) • High forward transfer admittance: |Yfs| = 6.5S (typ.) • Low leakage current: IDSS = 100 ?A (VDS = 500 V) • Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C)

4.2. 2sk3562.pdf Size:232K _toshiba

2SK3569
2SK3569

2SK3562 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSVI) 2SK3562 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.9? (typ.) • High forward transfer admittance: |Yfs| = 5.0S (typ.) • Low leakage current: IDSS = 100 ?A (VDS = 600 V) • Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) C

4.3. 2sk3563.pdf Size:348K _toshiba

2SK3569
2SK3569

TENTATIVE 2SK3563 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOS?) 2SK3563 unit:mm Switching Regulator Applications 10±0.3 2.7±0.2 ?3.2±0.2 • Low drain-source ON resistance: RDS (ON) = 1.35? (typ.) • High forward transfer admittance: |Yfs| = 3.5S (typ.) • Low leakage current: IDSS = 100 ?A (VDS = 500 V) • Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID =

4.4. 2sk3566_100506.pdf Size:214K _toshiba

2SK3569
2SK3569

2SK3566 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSIV) 2SK3566 Switching Regulator Applications Unit: mm • Low drain-source ON-resistance: RDS (ON) = 5.6 ? (typ.) • High forward transfer admittance: |Yfs| = 2.0 S (typ.) • Low leakage current: IDSS = 100 ?A (max) (VDS = 720 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Rat

4.5. 2sk3565.pdf Size:341K _toshiba

2SK3569
2SK3569

TENTATIVE 2SK3565 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOS?) 2SK3565 unit:mm Switching Regulator Applications 10±0.3 2.7±0.2 ?3.2±0.2 • Low drain-source ON resistance: RDS (ON) = 2.0? (typ.) • High forward transfer admittance: |Yfs| = 4.5 S (typ.) • Low leakage current: IDSS = 100 ?A (VDS = 720 V) • Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID =

4.6. 2sk3564.pdf Size:248K _toshiba

2SK3569
2SK3569

2SK3564 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSIV) 2SK3564 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 3.7? (typ.) • High forward transfer admittance: |Yfs| = 2.6 S (typ.) • Low leakage current: IDSS = 100 ?A (VDS = 720 V) • Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta =

4.7. 2sk3567.pdf Size:223K _toshiba

2SK3569
2SK3569

2SK3567 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSVI) 2SK3567 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.7? (typ.) • High forward transfer admittance: |Yfs| = 2.5S (typ.) • Low leakage current: IDSS = 100 ?A (VDS = 600 V) • Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta =

4.8. 2sk3568.pdf Size:245K _toshiba

2SK3569
2SK3569

2SK3568 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSVI) 2SK3568 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.4? (typ.) • High forward transfer admittance: |Yfs| = 8.5S (typ.) • Low leakage current: IDSS = 100 ?A (VDS = 500 V) • Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta =

4.9. 2sk3560.pdf Size:76K _panasonic

2SK3569
2SK3569

Power MOSFETs 2SK3560 Silicon N-channel power MOSFET Unit: mm 4.6±0.2 10.5±0.3 1.4±0.1 For PDP/For high-speed switching ¦ Features • Low on-resistance, low Qg 1.4±0.1 • High avalanche resistance 2.5±0.2 0.8±0.1 2.54±0.3 0 to 0.3 ¦ Absolute Maximum Ratings TC = 25°C (10.2) Parameter Symbol Rating Unit (8.9) Drain-source surrender voltage VDSS 230 V 1 2 3 Gate-source surrender

Altri tipi di transistor... 2SK3499 , 2SK3506 , 2SK3543 , 2SK3561 , 2SK3562 , 2SK3563 , 2SK3567 , 2SK3568 , IRF540N , 2SK3625 , 2SK3662 , 2SK3667 , 2SK3669 , 2SK3797 , 2SK3844 , 2SK3846 , 2SK3847 .

 


2SK3569
  2SK3569
  2SK3569
  2SK3569
 
2SK3569
  2SK3569
  2SK3569
  2SK3569
 

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