2SJ222 MOSFET. Curve Caratteristiche. Datasheet.

Tipo: 2SJ222

Struttura del transistor: MOSFET

Canale di conduzione: P

Potenza massima dissipabile (Pd): 35

Tensione di blocco drain source (Uds): 100V

Massima tensione gate-source (Ugs):

Massima corrente continuativa (Id): 20

Temperatura di giunzione (Tj), °C:

Tempo di salita del fronte di corrente (tr):

Capacità di uscita (Cd), pf:

Resistenza di uscita (Rds), Ohm: 0.12

Pack: TO220FM

Equivalente per i 2SJ222

2SJ222 - Potete trovare data sheet, manuali di istruzioni e altre informazioni per il vostro lavoro disponibili per il download in formato PDF

1.1. rej03g0852_2sj222ds.pdf Size:95K _renesas

and careful attention to additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website. 2. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyr

1.2. 2sj222.pdf Size:82K _renesas

ristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V (BR) DSS –100 — — V I = –10 mA, V = 0 D GS Gate to source breakdown voltage V ±20 — — V I = ±100 µA, V = 0 (BR) GSS G DS Gate to source leak current I — — ±10 µA V = ±16 V, V = 0 GSS GS DS Zero gate voltage drain current I — — –250 µA V = –80 V, V = 0 DSS DS GS Gate to source cutoff voltage V GS (off) –1.0 — –2.0 V I = –1 mA, V = –10 V D DS Static drain to source on state

5.1. 2sj225.pdf Size:91K _sanyo

0 µA Cutoff Voltage VGS(off) VDS=–10V, ID=–1mA –1.0 –2.0 V Forward Transfer Admittance | yfs | VDS=–10V, ID=–500mA 0.6 1.0 S RDS(on) ID=–500mA, VGS=–10V 0.5 0.75 ? Static Drain-to-Source ON-State Resistance RDS(on) ID=–500mA, VGS=–4V 0.75 1.1 ? Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems,

5.2. 2sj227.pdf Size:85K _sanyo

te Voltage Drain Current IDSS VDS=–30V, VGS=0 –100 µA Gate-to-Source Leakage Current IGSS VGS=±12V, VDS=0 ±10 µA Cutoff Voltage VGS(off) VDS=–10V, ID=–1mA –1.0 –2.0 V Forward Transfer Admittance | yfs | VDS=–10V, ID=–1.5A 2 3.5 S RDS(on) ID=–1.5A, VGS=–10V 95 130 m? Static Drain-to-Source ON-State Resistance RDS(on) ID=–1.5A, VGS=–4V 130 170 m? Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that re

5.3. 2sj229.pdf Size:86K _sanyo

-Gate Voltage Drain Current IDSS VDS=–60V, VGS=0 –100 µA Gate-to-Source Leakage Current IGSS VGS=±12V, VDS=0 ±10 µA Cutoff Voltage VGS(off) VDS=–10V, ID=–1mA –1.0 –2.0 V Forward Transfer Admittance | yfs | VDS=–10V, ID=–800mA 1.0 1.8 S RDS(on) ID=–800mA, VGS=–10V 0.35 0.45 ? Static Drain-to-Source ON-State Resistance RDS(on) ID=–800mA, VGS=–4V 0.45 0.6 ? Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applicatio

5.4. 2sj228.pdf Size:92K _sanyo

0 ±10 µA Cutoff Voltage VGS(off) VDS=–10V, ID=–1mA –1.0 –2.0 V Forward Transfer Admittance | yfs | VDS=–10V, ID=–400mA 0.5 0.9 S RDS(on) ID=–400mA, VGS=–10V 0.9 1.2 ? Static Drain-to-Source ON-State Resistance RDS(on) ID=–400mA, VGS=–4V 1.2 1.6 ? Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems

5.5. 2sj226.pdf Size:84K _sanyo

e Voltage Drain Current IDSS VDS=–30V, VGS=0 –100 µA Gate-to-Source Leakage Current IGSS VGS=±12V, VDS=0 ±10 µA Cutoff Voltage VGS(off) VDS=–10V, ID=–1mA –1.0 –2.0 V Forward Transfer Admittance | yfs | VDS=–10V, ID=–1A 1.2 2 S RDS(on) ID=–1A, VGS=–10V 0.2 0.3 ? Static Drain-to-Source ON-State Resistance RDS(on) ID=–1A, VGS=–4V 0.3 0.45 ? Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require e

5.6. rej03g0851_2sj221ds.pdf Size:94K _renesas

and careful attention to additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website. 2. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyr

5.7. 2sj221.pdf Size:81K _renesas

Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V (BR) DSS –100 — — V I = –10 mA, V = 0 D GS Gate to source breakdown voltage V ±20 — — V I = ±100 µA, V = 0 (BR) GSS G DS Gate to source leak current I — — ±10 µA V = ±16 V, V = 0 GSS GS DS Zero gate voltage drain current I — — –250 µA V = –80 V, V = 0 DSS DS GS Gate to source cutoff voltage V GS (off) –1.0 — –2.0 V I = –1 mA, V = –10 V D DS Static drain to source

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