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HAT2256R
MOSFET. Curve Caratteristiche. Datasheet. Tipo: HAT2256R
Struttura del transistor: MOSFET
Canale di conduzione: N
Potenza massima dissipabile (Pd):
Tensione di blocco drain source (Uds): 60V
Massima tensione gate-source (Ugs):
Massima corrente continuativa (Id): 8
Temperatura di giunzione (Tj), Β°C:
Tempo di salita del fronte di corrente (tr):
CapacitΓ di uscita (Cd), pf:
Resistenza di uscita (Rds), Ohm: 0.024
Pack: SOP8
Equivalente per i HAT2256R
HAT2256R
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5.15. rej03g1678_hat2200wpds.pdf Size:84K _renesas |
| Rg ? 50 ?
3. Tc = 25°C
REJ03G1678-0310 Rev.3.10 Page 1 of 7
May 13, 2010
HAT2200WP Preliminary
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V(BR)DSS 100 V ID = 10 mA, VGS = 0
Gate to source leak current IGSS ±0.1 ?A VGS = ±20 V, VDS = 0
Zero gate voltage drain current IDSS 1 ?A VDS = 100 V, VGS = 0
Gate to source cutoff voltage VGS(off) 3.5 5.0 V VDS = 10 V, ID = 1 mA
Static drain to |
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5.24. rej03g1679_hat2201wpds.pdf Size:84K _renesas |
| C, Rg ? 50 ?
3. Tc = 25°C
REJ03G1679-0310 Rev.3.10 Page 1 of 7
May 21, 2010
HAT2201WP Preliminary
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V(BR)DSS 100 V ID = 10 mA, VGS = 0
Gate to source leak current IGSS ±0.1 ?A VGS = ±20 V, VDS = 0
Zero gate voltage drain current IDSS 1 ?A VDS = 100 V, VGS = 0
Gate to source cutoff voltage VGS(off) 3.5 5.0 V VDS = 10 V, ID = 1 mA
Static drain t |
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5.27. rej03g1549_hat2244wpds.pdf Size:84K _renesas |
| g ? 50 ?
3. Tc = 25°C
REJ03G1549-0410 Rev.4.10 Page 1 of 7
May 13, 2010
HAT2244WP Preliminary
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V(BR)DSS 80 V ID = 10 mA, VGS = 0
Gate to source leak current IGSS ± 0.5 ?A VGS = ±20 V, VDS = 0
Zero gate voltage drain current IDSS 1 ?A VDS = 80 V, VGS = 0
Gate to source cutoff voltage VGS(off) 0.8 2.3 V VDS = 10 V, ID = 1 mA
Static drain to sou |
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5.29. r07ds0323ej_hat2203c.pdf Size:84K _renesas |
| , 2011
HAT2203C Preliminary
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to Source breakdown voltage V(BR)DSS 20 V ID = 10 mA, VGS = 0
Gate to Source breakdown voltage V(BR)GSS ±12 IG = ?100 ?A, VDS = 0
Gate to Source leak current IGSS ±10 ?A VGS = ?10 V, VDS = 0
Drain to Source leak current IDSS 1 ?A VDS = 20 V, VGS = 0
Gate to Source cutoff voltage VGS(off) 0.4 1.4 V VDS = 10 V, ID = 1 mA
Drain to Source on state re |
Altri tipi di transistor... HAT2215RJ
, HAT2217C
, HAT2218R
, HAT2220R
, HAT2221C
, HAT2226R
, HAT2240C
, HAT2244WP
, BF961
, HAT2266H
, HAT2267H
, HAT2268C
, HAT2270H
, HAT2275R
, HAT2276R
, HAT2279H
, HAT2279N
.
|