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IRF4905 MOSFET. Curve Caratteristiche. Datasheet.

Tipo: IRF4905

Struttura del transistor: MOSFET

Canale di conduzione: P

Potenza massima dissipabile (Pd): 150

Tensione di blocco drain source (Uds): 55

Massima tensione gate-source (Ugs): 10

Massima corrente continuativa (Id): 64

Temperatura di giunzione (Tj), °C: 150

Tempo di salita del fronte di corrente (tr):

Capacità di uscita (Cd), pf:

Resistenza di uscita (Rds), Ohm: 0.02

Pack: TO220AB

Equivalente per i IRF4905

IRF4905 PDF doc:

1.1. irf4905.pdf Size:108K _international_rectifier

IRF4905
IRF4905

PD - 9.1280C IRF4905 HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = -55V Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 0.02? Fast Switching G P-Channel ID = -74A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resista

1.2. irf4905s.pdf Size:163K _international_rectifier

IRF4905
IRF4905

PD - 9.1478A IRF4905S/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF4905S) VDSS = -55V Low-profile through-hole (IRF4905L) 175C Operating Temperature RDS(on) = 0.02? Fast Switching G P-Channel ID = -74A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extre

Altri tipi di transistor... IRF3710S , IRF430 , IRF440 , IRF450 , IRF451 , IRF452 , IRF453 , IRF460 , 2N5485 , IRF4905L , IRF4905S , IRF510 , IRF510A , IRF510S , IRF511 , IRF512 , IRF513 .

 


IRF4905
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