IRF840 Tutti i transistor e i loro equivalenti

 

IRF840 MOSFET. Curve Caratteristiche. Datasheet.

Tipo: IRF840

Struttura del transistor: MOSFET

Canale di conduzione: N

Potenza massima dissipabile (Pd): 125

Tensione di blocco drain source (Vds): 500

Massima tensione gate-source (Vgs): 20

Massima corrente continuativa (Id): 8

Temperatura di giunzione (Tj), °C: 150

Tempo di salita del fronte di corrente (tr):

Capacità di uscita (Cd), pf: 1500

Resistenza di uscita (Rds), Ohm: 0.85

Pack: TO220

Equivalente per i IRF840

IRF840 PDF doc:

1.1. irf840_1.pdf Size:60K _philips

IRF840
IRF840

Philips Semiconductors Product specification PowerMOS transistor IRF840 Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 500 V High thermal cycling performance Low thermal resistance ID = 8.5 A g RDS(ON) ? 0.85 ? s GENERAL DESCRIPTION PINNING SOT78 (TO220AB) N-channel, enhancement mode PIN DESCRIPTION tab field

1.2. irf840f.pdf Size:188K _st

IRF840
IRF840

IRF840/FI IRF841/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE VDSS RDS(on) ID IRF840 500 V < 0.85 ? 8 A IRF840FI 500 V < 0.85 ? 4.5 A IRF841 450 V < 0.85 ? 8 A IRF841FI 450 V < 0.85 ? 4.5 A TYPICAL R = 0.74 ? DS(on) AVALANCHE RUGGED TECHNOLOGY 3 3 100% AVALANCHE TESTED 2 2 1 1 REPETITIVE AVALANCHE DATA AT 100oC APPLICATIONS TO-220 ISOWATT220 HIGH CURRENT, HIGH

1.3. irf840.pdf Size:360K _st

IRF840
IRF840

IRF840 N-CHANNEL 500V - 0.75? - 8ATO-220 PowerMeshII MOSFET TYPE VDSS RDS(on) ID IRF840 500 V < 0.85 ? 8 A TYPICAL RDS(on) = 0.75 ? EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK 3 GATE CHARGE MINIMIZED 2 1 DESCRIPTION TO-220 The PowerMESHII is the evolution of the first generation of MESH OVERLAY. The layout re- finements introduced great

1.4. irf840a.pdf Size:99K _st

IRF840
IRF840

IRF840/FI IRF841/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE VDSS RDS(on) ID IRF840 500 V < 0.85 ? 8 A IRF840FI 500 V < 0.85 ? 4.5 A IRF841 450 V < 0.85 ? 8 A IRF841FI 450 V < 0.85 ? 4.5 A TYPICAL RDS(on) = 0.74 ? AVALANCHE RUGGED TECHNOLOGY 3 3 100% AVALANCHE TESTED 2 2 1 1 REPETITIVE AVALANCHE DATA AT 100oC APPLICATIONS TO-220 ISOWATT220 HIGH CURRENT, HIGH S

1.5. irf840,841(th).pdf Size:188K _st

IRF840
IRF840

IRF840/FI IRF841/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE VDSS RDS(on) ID IRF840 500 V < 0.85 ? 8 A IRF840FI 500 V < 0.85 ? 4.5 A IRF841 450 V < 0.85 ? 8 A IRF841FI 450 V < 0.85 ? 4.5 A TYPICAL R = 0.74 ? DS(on) AVALANCHE RUGGED TECHNOLOGY 3 3 100% AVALANCHE TESTED 2 2 1 1 REPETITIVE AVALANCHE DATA AT 100oC APPLICATIONS TO-220 ISOWATT220 HIGH CURRENT, HIGH

1.6. irf840-1-2-3-fi.pdf Size:471K _st2

IRF840
IRF840

1.7. irf840b.pdf Size:911K _fairchild_semi

IRF840
IRF840

November 2001 IRF840B/IRFS840B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 8.0A, 500V, RDS(on) = 0.8? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 41 nC) planar, DMOS technology. Low Crss ( typical 35 pF) This advanced technology has been especially tailored to Fast switchin

1.8. irf840spbf.pdf Size:666K _international_rectifier

IRF840
IRF840

PD-95136 IRF840SPbF Lead-Free D2Pak 05/10/04 Document Number: 91071 www.vishay.com 1 IRF840SPbF Document Number: 91071 www.vishay.com 2 IRF840SPbF Document Number: 91071 www.vishay.com 3 IRF840SPbF Document Number: 91071 www.vishay.com 4 IRF840SPbF Document Number: 91071 www.vishay.com 5 IRF840SPbF Document Number: 91071 www.vishay.com 6 IRF840SPbF Document Number: 9

1.9. irf840lc.pdf Size:194K _international_rectifier

IRF840
IRF840

1.10. irf840s.pdf Size:172K _international_rectifier

IRF840
IRF840

1.11. irf840lcpbf.pdf Size:986K _international_rectifier

IRF840
IRF840

PD - 94883 IRF840LCPbF Lead-Free 12/11/03 Document Number: 91067 www.vishay.com 1 IRF840LCPbF Document Number: 91067 www.vishay.com 2 IRF840LCPbF Document Number: 91067 www.vishay.com 3 IRF840LCPbF Document Number: 91067 www.vishay.com 4 IRF840LCPbF Document Number: 91067 www.vishay.com 5 IRF840LCPbF Document Number: 91067 www.vishay.com 6 IRF840LCPbF Document Number:

1.12. irf840aspbf_irf840alpbf.pdf Size:673K _international_rectifier

IRF840
IRF840

PD- 95143 IRF840ASPbF SMPS MOSFET IRF840ALPbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply 500V 0.85? 8.0A High Speed Power Switching Lead-Free Benefits Low Gate Charge Qg Results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and D2Pak T

1.13. irf840pbf.pdf Size:1086K _international_rectifier

IRF840
IRF840

PD - 94882 IRF840PbF Lead-Free www.irf.com 1 12/10/0 Document Number: 91070 www.vishay.com 1 IRF840PbF Document Number: 91070 www.vishay.com 2 IRF840PbF Document Number: 91070 www.vishay.com 3 IRF840PbF Document Number: 91070 www.vishay.com 4 IRF840PbF Document Number: 91070 www.vishay.com 5 IRF840PbF Document Number: 91070 www.vishay.com 6 IRF840PbF TO-220AB Package

1.14. irf840.pdf Size:170K _international_rectifier

IRF840
IRF840

1.15. irf840lcspbf_irf840lclpbf.pdf Size:458K _international_rectifier

IRF840
IRF840

PD- 95759 IRF840LCSPbF IRF840LCLPbF Lead-Free 8/24/04 Document Number: 91068 www.vishay.com 1 IRF840LCS/LPbF Document Number: 91068 www.vishay.com 2 IRF840LCS/LPbF Document Number: 91068 www.vishay.com 3 IRF840LCS/LPbF Document Number: 91068 www.vishay.com 4 IRF840LCS/LPbF Document Number: 91068 www.vishay.com 5 IRF840LCS/LPbF Document Number: 91068 www.vishay.com 6 I

1.16. irf840lcs.pdf Size:173K _international_rectifier

IRF840
IRF840

PD- 93766 IRF840LCS IRF840LCL HEXFET Power MOSFET Ultra Low Gate Charge D Reduced Gate Drive Requirement VDSS = 500V Enhanced 30V VGS Rating Reduced CISS, COSS, CRSS RDS(on) = 0.85? Extremely High Frequency Operation G Repetitive Avalanche Rated ID = 8.0A Description S This new series of low charge HEXFET power MOSFETs achieve significant lower gate charge over convention

1.17. irf840a.pdf Size:199K _international_rectifier

IRF840
IRF840

PD- 94829 SMPS MOSFET IRF840APbF HEXFET Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply 500V 0.85? 8.0A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and S D Avalanc

1.18. irf840as.pdf Size:129K _international_rectifier

IRF840
IRF840

PD- 91901B IRF840AS SMPS MOSFET IRF840AL HEXFET Power MOSFET Applications VDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply 500V 0.85? 8.0A High Speed Power Switching Benefits Low Gate Charge Qg Results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and D2Pak TO-262 Avalanche

1.19. irfp440-443_irf840-843.pdf Size:192K _samsung

IRF840
IRF840



1.20. irf840a.pdf Size:941K _samsung

IRF840
IRF840

Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS(on) = 0.85 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 500V Lower RDS(ON) : 0.638 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units

1.21. irf840l_sihf840l.pdf Size:161K _vishay

IRF840
IRF840

IRF840L, SiHF840L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 500 Definition Dynamic dV/dt Rating RDS(on) (?)VGS = 10 V 0.85 Repetitive Avalanche Rated Qg (Max.) (nC) 63 Fast Switching Qgs (nC) 9.3 Ease of Paralleling Qgd (nC) 32 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 200

1.22. irf840a_sihf840a.pdf Size:206K _vishay

IRF840
IRF840

IRF840A, SiHF840A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement Available RDS(on) (?)VGS = 10 V 0.85 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 38 COMPLIANT Ruggedness Qgs (nC) 9.0 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 18 and Current Configuration Single

1.23. irf840lc_sihf840lc.pdf Size:197K _vishay

IRF840
IRF840

IRF840LC, SiHF840LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 500 Reduced Gate Drive Requirement Available RDS(on) (?)VGS = 10 V 0.85 Enhanced 30 V VGS Rating RoHS* COMPLIANT Reduced Ciss, Coss, Crss Qg (Max.) (nC) 39 Extremely High Frequency Operation Qgs (nC) 10 Repetitive Avalanche Rated Qgd (nC) 19 Compliant to RoHS Dir

1.24. irf840_sihf840.pdf Size:195K _vishay

IRF840
IRF840

IRF840, SiHF840 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 500 Available Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 0.85 RoHS* Fast Switching Qg (Max.) (nC) 63 COMPLIANT Ease of Paralleling Qgs (nC) 9.3 Qgd (nC) 32 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D DESCRIPTION TO-22

1.25. irf840.pdf Size:141K _inchange_semiconductor

IRF840
IRF840

INCHANGE Semiconductor isc Product Specification isc N-Channel Mosfet Transistor IRF840 ·FEATURES ·Drain Current –ID=8.0A@ TC=25? ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.85?(Max) ·DESCRITION ·Designed for high voltage, high speed switching power applic- ations such as switching regulators, converters, solenoid and re

1.26. hirf840.pdf Size:47K _hsmc

IRF840
IRF840

Spec. No. : MOS200505 HI-SINCERITY Issued Date : 2005.06.01 Revised Date : 2005.06.08 MICROELECTRONICS CORP. Page No. : 1/4 HIRF840 Series Pin Assignment HIRF840 / HIRF840F Tab N-CHANNEL POWER MOSFET 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Description Pin 3: Source This N - Channel MOSFETs provide the designer with the best combination of fast switch

1.27. irf840s.pdf Size:94K _a-power

IRF840
IRF840

IRF840S RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Ease of Paralleling D BVDSS 500V Ў Fast Switching Characteristic RDS(ON) 0.85? Ў Simple Drive Requirement ID 8A G S Description APEC MOSFET provide the power designer with the best combination of fast G switching , lower on-resistance and reasonable cost. D S TO-263(S) The TO

1.28. irf840i.pdf Size:152K _a-power

IRF840
IRF840

IRF840I RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Ease of Paralleling D BVDSS 500V Ў Fast Switching Characteristic RDS(ON) 0.85? Ў Simple Drive Requirement ID 8A G S Description APEC MOSFET provide the power designer with the best combination G of fast switching , lower on-resistance and reasonable D TO-220CFM(I) S The TO-2

1.29. irf840.pdf Size:95K _a-power

IRF840
IRF840

IRF840 RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Ease of Paralleling D BVDSS 500V Ў Fast Switching Characteristic RDS(ON) 0.85? Ў Simple Drive Requirement ID 8A G S Description G TO-220(P) D APEC MOSFET provide the power designer with the best combination of fast S switching , lower on-resistance and reasonable cost. The TO

1.30. irf840s.pdf Size:1503K _kexin

IRF840
IRF840

SMD Type MOSFET N-Channel MOSFET IRF840S (KRF840S) ■ Features ● VDS (V) =500V ● ID =8 A (VGS = 10V) ● RDS(ON) <0.85Ω (VGS = 10V) ● Fast switching ● Low thermal resistance d g s ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS ±20 Ta = 25℃ 8 Continuous Drain Current ID Ta = 1

Altri tipi di transistor... IRF830AL , IRF830AS , IRF830FI , IRF830S , IRF831 , IRF831FI , IRF832 , IRF833 , 2N3824 , IRF840A , IRF840A , IRF840AS , IRF840FI , IRF840S , IRF841 , IRF841FI , IRF842 .

 


IRF840
  IRF840
  IRF840
  IRF840
 
IRF840
  IRF840
  IRF840
  IRF840
 

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