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IRFP064N MOSFET. Curve Caratteristiche. Datasheet.

Tipo: IRFP064N

Struttura del transistor: MOSFET

Canale di conduzione: N

Potenza massima dissipabile (Pd): 200

Tensione di blocco drain source (Uds): 55

Massima tensione gate-source (Ugs): 20

Massima corrente continuativa (Id): 110

Temperatura di giunzione (Tj), °C: 175

Tempo di salita del fronte di corrente (tr):

Capacità di uscita (Cd), pf: 4000

Resistenza di uscita (Rds), Ohm: 0.008

Pack: TO247

Equivalente per i IRFP064N

IRFP064N PDF doc:

1.1. irfp064n.pdf Size:107K _international_rectifier

IRFP064N
IRFP064N

PD - 9.1383A IRFP064N HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 55V Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 0.008? Fast Switching G Fully Avalanche Rated ID = 110A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per si

3.1. irfp064.pdf Size:171K _international_rectifier

IRFP064N
IRFP064N

3.2. irfp064pbf.pdf Size:1790K _international_rectifier

IRFP064N
IRFP064N

PD- 95672 IRFP064PbF Lead-Free 8/2/04 Document Number: 91201 www.vishay.com 1 IRFP064PbF Document Number: 91201 www.vishay.com 2 IRFP064PbF Document Number: 91201 www.vishay.com 3 IRFP064PbF Document Number: 91201 www.vishay.com 4 IRFP064PbF Document Number: 91201 www.vishay.com 5 IRFP064PbF Document Number: 91201 www.vishay.com 6 IRFP064PbF Peak Diode Recovery dv/dt

3.3. irfp064v.pdf Size:210K _international_rectifier

IRFP064N
IRFP064N

PD - 94112 IRFP064V HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 5.5m? G Fast Switching Fully Avalanche Rated ID = 130A Optimized for SMPS Applications S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve

3.4. irfp064_sihfp064.pdf Size:1684K _vishay

IRFP064N
IRFP064N

IRFP064, SiHFP064 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Repetitive Avalanche Rated Available RDS(on) (?)VGS = 10 V 0.009 Ultra Low On- Resistance RoHS* COMPLIANT Qg (Max.) (nC) 190 Very Low Thermal Resistance Qgs (nC) 55 Isolated Central Mounting Hole Qgd (nC) 90 175 C Operating Temperature Fast Switching Configurati

3.5. irfp064pbf.pdf Size:3803K _kexin

IRFP064N
IRFP064N

DIP Type MOSFET N-Channel MOSFET IRFP064PBF (KRFP064PBF) TO-247 ■ Features ● VDS (V) = 60V ● ID = 70 A (VGS = 10V) ● RDS(ON) < 9mΩ (VGS = 10V) ● Very Low Thermal Resistance ● Isolated Central Mounting Hole 1 2 3 ● Fast Switching G D ● Dynamic dV/dt Rating S D G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Volt

Altri tipi di transistor... IRFN9240 , IRFP044 , IRFP044N , IRFP048 , IRFP048N , IRFP054 , IRFP054N , IRFP064 , IRLR2905 , IRFP130 , IRFP131 , IRFP132 , IRFP133 , IRFP140 , IRFP140A , IRFP140N , IRFP141 .

 


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