IRL530 MOSFET. Curve Caratteristiche. Datasheet.

Tipo: IRL530

Struttura del transistor: MOSFET

Canale di conduzione: N

Potenza massima dissipabile (Pd): 75

Tensione di blocco drain source (Uds): 100V

Massima tensione gate-source (Ugs):

Massima corrente continuativa (Id): 13

Temperatura di giunzione (Tj), °C: 150

Tempo di salita del fronte di corrente (tr):

Capacità di uscita (Cd), pf:

Resistenza di uscita (Rds), Ohm:

Pack: TO220

Equivalente per i IRL530

IRL530 - Potete trovare data sheet, manuali di istruzioni e altre informazioni per il vostro lavoro disponibili per il download in formato PDF

1.1. irl530.pdf Size:167K _international_rectifier

1.2. irl530n.pdf Size:127K _international_rectifier

inuous Drain Current, VGS @ 10V 17 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 12 A IDM Pulsed Drain Current 60 PD @TC = 25°C Power Dissipation 79 W Linear Derating Factor 0.53 W/°C VGS Gate-to-Source Voltage ± 16 V EAS Single Pulse Avalanche Energy 150 mJ IAR Avalanche Current 9.0 A EAR Repetitive Avalanche Energy 7.9 mJ dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300

1.3. irl530ns.pdf Size:178K _international_rectifier

sistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRL530NL) is available for low- profile applications. Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 17 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 12 A IDM Pulsed Drain Current 60 PD @TA = 25°C Power Dissipation 3.8 W PD @TC = 25°C Power Dissipation 79 W Linear Derating Factor 0.53 W/°C VGS Gate-to-Source Voltage ± 20 V EA

1.4. irl530pbf.pdf Size:249K _international_rectifier

r MOSFETs Document Number: 91299 www.vishay.com 7 IRL530PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) - B - 3.78 (.149) 10.29 (.405) 2.87 (.113) 4.69 (.185) 3.54 (.139) 2.62 (.103) 4.20 (.165) - A - 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584) LEAD ASSIGNMENTS 1.15 (.045) LEAD ASSIGNMENTS HEXFET GATE IGBTs, CoPACK MIN 1 - 1 2 3 2 - 1- GATE DRAIN 1- GATE 3 - SOURCE 2- DRAIN 2- COLLECTOR 3- SO

1.5. irl530s.pdf Size:172K _international_rectifier

1.6. irl530a.pdf Size:1028K _samsung

Soldering TL 300 Purposes, 1/8 “ from case for 5-seconds Thermal Resistance Symbol Characteristic Typ. Max. Units R ?JC Junction-to-Case -- 4.2 o C/W R JA Junction-to-Ambient -- 62.5 ? N-CHANNEL POWER MOSFET Electrical Characteristics (TC=25oC unless otherwise specified) Symbol Characteristic Min. Typ. Max. Units Test Condition BVDSS µ VGS=0V,ID=250 A Drain-Source Breakdown Voltage 100 -- -- V BV/ TJ µ ? ? V/oC ID=250 A See Fig 7 Breakdown Voltage Temp. Coeff. -- 0

1.7. irl530_sihl530.pdf Size:996K _vishay

L530PbF Lead (Pb)-free SiHL530-E3 IRL530 SnPb SiHL530 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ± 10 TC = 25 °C 15 Continuous Drain Current VGS at 5.0 V ID TC = 100 °C 11 A Pulsed Drain Currenta IDM 60 Linear Derating Factor 0.59 W/°C Single Pulse Avalanche Energyb EAS 290 mJ Repetitive Avalanche Currenta IAR 15 A Repetitive Avalanche Energya EAR 8.8 mJ Maximum Power Dis

1.8. irl530s_sihl530s.pdf Size:275K _vishay

ET applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. ORDERING INFORMATION Package D2PAK (TO-263) Lead (Pb)-free and Halogen-free SiHL530STRR-GE3a IRL530STRRPbFa Lead (Pb)-free SiHL530STR-E3a Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ± 10 TC = 25 °C 15 Continuous D

Altri tipi di transistor... IRL510A , IRL511 , IRL520 , IRL520A , IRL520N , IRL520NL , IRL520NS , IRL521 , IRF460 , IRL530A , IRL530N , IRL530NL , IRL530NS , IRL531 , IRL540 , IRL540A , IRL540N .