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FDS3590
MOSFET. Curve Caratteristiche. Datasheet. Tipo: FDS3590
Struttura del transistor: MOSFET
Canale di conduzione: N
Potenza massima dissipabile (Pd):
Tensione di blocco drain source (Uds): 80V
Massima tensione gate-source (Ugs):
Massima corrente continuativa (Id): 6.5
Temperatura di giunzione (Tj), °C:
Tempo di salita del fronte di corrente (tr):
Capacità di uscita (Cd), pf:
Resistenza di uscita (Rds), Ohm: 0.037
Pack: SOIC
Equivalente per i FDS3590
FDS3590
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1.1. fds3590.pdf  Size:86K _fairchild_semi  |
 | us (Note 1a) 6.5 A
– Pulsed 50
PD Power Dissipation for Single Operation (Note 1a) 2.5 W
(Note 1b)
1.2
(Note 1c)
1.0
TJ, TSTG Operating and Storage Junction Temperature -55 to +150
°C
Range
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient (Note 1a) 50
R?JA °C/W
Thermal Resistance, Junction-to-Case (Note 1) 25
R?JC °C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDS3590 FDS3590 13’’ 12mm 2500 units
FDS3590 Rev C (W |
5.1. fds3512.pdf Size:86K _fairchild_semi  |
 |
±20
ID Drain Current – Continuous (Note 1a) 4.0 A
– Pulsed 30
PD Power Dissipation for Single Operation (Note 1a) 2.5 W
(Note 1b)
1.2
(Note 1c)
1.0
TJ, TSTG Operating and Storage Junction Temperature Range –55 to +175
°C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient (Note 1a) 50
R?JA °C/W
Thermal Resistance, Junction-to-Case (Note 1) 25
R?JC °C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDS35 |
5.2. fds3580.pdf Size:83K _fairchild_semi  |
 | oltage V
±20
ID Drain Current - Continuous (Note 1a) 7.6 A
- Pulsed 50
PD Power Dissipation for Single Operation (Note 1a) 2.5 W
(Note 1b)
1.2
(Note 1c)
1
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150
°C
Thermal Characteristics
R?JA Thermal Resistance, Junction-to-Ambient (Note 1a) 50
°C/W
R?JC Thermal Resistance, Junction-to-Case (Note 1) 25
°C/W
Package Outlines and Ordering Information
Device Marking Device Reel Size Tape Width Quantity
FDS3580 FDS358 |
5.3. fds3572.pdf Size:628K _fairchild_semi  |
 | TSTG Operating and Storage Temperature -55 to 150 C
Thermal Characteristics
o
R?JC Thermal Resistance, Junction to Case (Note 2) 25 C/W
o
R?JA Thermal Resistance, Junction to Ambient at 10 seconds (Note 3) 50 C/W
o
R?JA Thermal Resistance, Junction to Ambient at 1000 seconds (Note 3) 85 C/W
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDS3572 FDS3572 SO-8 330mm 12mm 2500 units
©2003 Fairchild Semiconductor Corporation FDS3572 Rev |
Altri tipi di transistor... FDS2670
, FDS2672
, FDS2672
, FDS2672_F085
, FDS2672_F085
, FDS2734
, FDS3512
, FDS3572
, IRF150
, FDS3672
, FDS3672
, FDS3692
, FDS3692
, FDS3890
, FDS3992
, FDS3992
, FDS4141
.
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