IXFK140N25T MOSFET. Curve Caratteristiche. Datasheet.

Tipo: IXFK140N25T

Struttura del transistor: MOSFET

Canale di conduzione: N

Potenza massima dissipabile (Pd): 960

Tensione di blocco drain source (Uds): 250V

Massima tensione gate-source (Ugs):

Massima corrente continuativa (Id): 140

Temperatura di giunzione (Tj), °C:

Tempo di salita del fronte di corrente (tr): ns

Capacità di uscita (Cd), pf:

Resistenza di uscita (Rds), Ohm: 0.017

Pack: TO264

Equivalente per i IXFK140N25T

IXFK140N25T - Potete trovare data sheet, manuali di istruzioni e altre informazioni per il vostro lavoro disponibili per il download in formato PDF

1.1. ixfk140n25t_ixfx140n25t.pdf Size:138K _ixys

ic Diode Weight TO-264 10 g Avalanche Rated PLUS247 6 g Low RDS(on) Advantages Easy to Mount Symbol Test Conditions Characteristic Values Space Savings (TJ = 25°C Unless Otherwise Specified) Min. Typ. Max. High Power Density BVDSS VGS = 0V, ID = 3mA 250 V Applications VGS(th) VDS = VGS, ID = 4mA 2.5 5.0 V DC-DC Converters IGSS VGS = ± 20V, VDS = 0V ± 200 nA Battery Chargers Switched-Mode and Resonant-Mode IDSS VDS = VDSS, VGS= 0V 50 µA Power Supplies TJ

1.2. ixfk140n20p.pdf Size:225K _ixys

C Advantages Md Mounting torque 1.13/10 Nm/lb.in. l Weight 10 g Easy to mount l Space savings Symbol Test Conditions Characteristic Values l High power density (TJ = 25° C, unless otherwise specified) Min. Typ. Max. BVDSS VGS = 0 V, ID = 250 µA 200 V VGS(th) VDS = VGS, ID = 4 mA 2.5 5.0 V IGSS VGS = ±20 VDC, VDS = 0 ±200 nA IDSS VDS = VDSS 25 µA VGS = 0 V TJ = 150° C 250 µA RDS(on) VGS = 10 V, ID = 0.5 ID25 18 m ? VGS = 15 V, ID = 140A 14 m ? Pulse test, t ?300 µs, duty cycle

5.1. ixfk180n25t_ixfx180n25t.pdf Size:138K _ixys

e FC Mounting Force (PLUS247) 20..120 /4.5..27 N/lb. Avalanche Rated Weight TO-264 10 g Low RDS(on) PLUS247 6 g Advantages Easy to Mount Symbol Test Conditions Characteristic Values Space Savings (TJ = 25°C Unless Otherwise Specified) Min. Typ. Max. High Power Density BVDSS VGS = 0V, ID = 3mA 250 V Applications VGS(th) VDS = VGS, ID = 8mA 2.5 5.0 V DC-DC Converters IGSS VGS = ± 20V, VDS = 0V ± 200 nA Battery Chargers Switched-Mode and Resonant-Mode IDSS

5.2. ixfk160n30t_ixfx160n30t.pdf Size:138K _ixys

nsic Diode Weight TO-264 10 g Avalanche Rated PLUS247 6 g Low RDS(on) Advantages Easy to Mount Symbol Test Conditions Characteristic Values Space Savings (TJ = 25°C Unless Otherwise Specified) Min. Typ. Max. High Power Density BVDSS VGS = 0V, ID = 3mA 300 V Applications VGS(th) VDS = VGS, ID = 8mA 2.5 5.0 V DC-DC Converters IGSS VGS = ± 20V, VDS = 0V ± 200 nA Battery Chargers Switched-Mode and Resonant-Mode IDSS VDS = VDSS, VGS= 0V 50 µA Power Supplies

5.3. ixfh150n15p_ixfk150n15p.pdf Size:252K _ixys

d Inductive Switching (UIS) TO-264 10 g rated l Low package inductance - easy to drive and to protect Symbol Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. Advantages BVDSS VGS = 0 V, ID = 250 µA 150 V l Easy to mount l VGS(th) VDS = VGS, ID = 4 mA 3.0 5.0 V Space savings l High power density IGSS VGS = ±20 VDC, VDS = 0 ±100 nA IDSS VDS = VDSS 25 µA VGS = 0 V TJ = 175° C 1000 µA RDS(on) VGS = 10 V, ID = 0.5 ID25 13 m ? Pulse tes

5.4. ixfk180n15p_ixfx180n15p.pdf Size:178K _ixys

g PLUS247 (IXFX) 6 g Features Symbol Test Conditions Characteristic Values l International standard packages (TJ = 25° C, unless otherwise specified) Min. Typ. Max. l Unclamped Inductive Switching (UIS) BVDSS VGS = 0 V, ID = 250 µA 150 V rated l Low package inductance VGS(th) VDS = VGS, ID = 4 mA 2.5 5.0 V - easy to drive and to protect IGSS VGS = ±20 VDC, VDS = 0 ±200 nA Advantages IDSS VDS = VDSS 25 µA VGS = 0 V TJ = 150° C 250 µA l Easy to mount l Space savings RDS(on)

5.5. ixfk110n06_ixfk105n07_ixfk110n07.pdf Size:156K _ixys

g (UIS) TL 1.6 mm (0.063 in) from case for 10 s 300 °C rated • Low package inductance Md Mounting torque 0.9/6 Nm/lb.in. • Fast intrinsic Rectifier Terminal connection torque - Nm/lb.in. Applications Weight 10 g • DC-DC converters Symbol Test Conditions Characteristic Values • Synchronous rectification (TJ = 25°C, unless otherwise specified) • Battery chargers min. typ. max. • Switched-mode and resonant-mode power supplies VDSS VGS = 0 V, ID = 1 mA N06 60 V • DC choppers N07 7

5.6. ixfk180n07_ixfx180n07.pdf Size:80K _ixys

ue TO-264 0.9/6 Nm/lb.in. Low package inductance - easy to drive and to protect Weight PLUS 247 6 g Fast intrinsic rectifier TO-264 10 g Applications DC-DC converters Synchronous rectification Battery chargers Symbol Test Conditions Characteristic Values Switched-mode and resonant-mode (TJ = 25°C, unless otherwise specified) power supplies min. typ. max. DC choppers VDSS VGS = 0 V, ID = 3mA 70 V Temperature and lighting controls Low voltage relays VGS(

5.7. ixfk120n25p_ixfx120n25p.pdf Size:123K _ixys

ges Unclamped Inductive Switching (UIS) Symbol Test Conditions Characteristic Values rated (TJ = 25°C, unless otherwise specified) Min. Typ. Max. Low package inductance BVDSS VGS = 0 V, ID = 250 µA 250 V - easy to drive and to protect VGS(th) VDS = VGS, ID = 4 mA 2.5 5.0 V Advantages IGSS VGS = ±20 V, VDS = 0 V ±200 nA Easy to mount IDSS VDS = VDSS 25 µA Space savings VGS = 0 V TJ = 125°C 250 µA High power density RDS(on) VGS = 10 V, ID = 0.5 ID25 19 24 m? Pulse t

5.8. ixfx170n20t_ixfk170n20t.pdf Size:123K _ixys

Avalanche Rated FC Mounting Force (PLUS247) 20..120 /4.5..27 N/lb. Low RDS(on) Weight TO-264 10 g PLUS247 6 g Advantages Easy to Mount Space Savings Symbol Test Conditions Characteristic Values High Power Density (TJ = 25°C Unless Otherwise Specified) Min. Typ. Max. Applications BVDSS VGS = 0V, ID = 3mA 200 V VGS(th) VDS = VGS, ID = 4mA 2.5 5.0 V Synchronous Recification DC-DC Converters IGSS VGS = ± 20V, VDS = 0V ± 200 nA Battery Chargers Switched-

5.9. ixfk102n30p.pdf Size:132K _ixys

easy to drive and to protect Md Mounting torque, Terminal lead torque 1.13/10 Nm/lb.in. Advantages Weight TO-264 10 g l Easy to mount l Space savings l High power density Symbol Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. BVDSS VGS = 0 V, ID = 250 µA 300 V VGS(th) VDS = VGS, ID = 4 mA 2.5 5.0 V IGSS VGS = ±20 VDC, VDS = 0 ±200 nA IDSS VDS = VDSS 25 µA VGS = 0 V TJ = 125° C 250 µA RDS(on) VGS = 10 V, ID = 0.5 ID25 33 m ? Pulse t

5.10. ixfk100n20_ixfn90n20_ixfn106n20.pdf Size:112K _ixys

150 °C Features Tstg -55 ... +150 °C l International standard packages TL 1.6 mm (0.063 in) from case for 10 s 300 - °C JEDEC TO-264 AA, epoxy meet UL 94 V-0, flammability classification VISOL 50/60 Hz, RMS t = 1 min - 2500 V~ miniBLOC with Aluminium nitride IISOL ? 1 mA t = 1 s - 3000 V~ isolation Md Mounting torque 0.9/6 1.5/13 Nm/lb.in. Low RDS (on) HDMOSTM process Terminal connection torque - 1.5/13 Nm/lb.in. Rugged polysilicon gate cell structure Unclamped Inductive Switchin

5.11. ixfk180n10_ixfx180n10.pdf Size:109K _ixys

ight PLUS 247 6 g rated TO-264 10 g • Low package inductance - easy to drive and to protect • Fast intrinsic rectifier Applications • DC-DC converters Symbol Test Conditions Characteristic Values • Battery chargers (TJ = 25°C, unless otherwise specified) • Switched-mode and resonant-mode min. typ. max. power supplies VDSS VGS = 0 V, ID = 3mA 100 V • DC choppers • AC motor control VGS(th) VDS = VGS, ID = 8mA 2.0 4.0 V • Temperature and lighting controls IGSS VGS = ±20 V, VDS =

5.12. ixfk120n30t_ixfx120n30t.pdf Size:139K _ixys

insic Diode Weight TO-264 10 g Avalanche Rated PLUS247 6 g Low RDS(on) Advantages Easy to Mount Symbol Test Conditions Characteristic Values Space Savings (TJ = 25°C Unless Otherwise Specified) Min. Typ. Max. High Power Density BVDSS VGS = 0V, ID = 3mA 300 V Applications VGS(th) VDS = VGS, ID = 4mA 2.5 5.0 V DC-DC Converters IGSS VGS = ± 20V, VDS = 0V ± 200 nA Battery Chargers Switched-Mode and Resonant-Mode IDSS VDS = VDSS, VGS= 0V 50 µA Power Supplies

5.13. ixfx120n20_ixfk120n20.pdf Size:1919K _ixys

Nm/b.in. • Unclamped Inductive Switching (UIS) rated Weight PLUS 247 6 g • Low package inductance TO-264 10 g - easy to drive and to protect • Fast intrinsic rectifier Applications • DC-DC converters • Battery chargers Symbol Test Conditions Characteristic Values • Switched-mode and resonant-mode (TJ = 25°C, unless otherwise specified) power supplies min. typ. max. • DC choppers VDSS VGS = 0 V, ID = 3mA 200 V • AC motor control • Temperature and lighting controls VGS(th) VDS

Altri tipi di transistor... IXFH96N20P , IXFH9N80Q , IXFK102N30P , IXFK120N20P , IXFK120N25 , IXFK120N25P , IXFK120N30T , IXFK140N20P , IRF1407 , IXFK140N30P , IXFK150N15P , IXFK15N100Q , IXFK160N30T , IXFK16N90Q , IXFK170N10P , IXFK170N20P , IXFK170N20T .