IXFT20N100P MOSFET. Curve Caratteristiche. Datasheet.

Tipo: IXFT20N100P

Struttura del transistor: MOSFET

Canale di conduzione: N

Potenza massima dissipabile (Pd): 660

Tensione di blocco drain source (Uds): 1000V

Massima tensione gate-source (Ugs):

Massima corrente continuativa (Id): 20

Temperatura di giunzione (Tj), °C:

Tempo di salita del fronte di corrente (tr): 300ns

Capacità di uscita (Cd), pf:

Resistenza di uscita (Rds), Ohm: 0.57

Pack: TO268

Equivalente per i IXFT20N100P

IXFT20N100P - Potete trovare data sheet, manuali di istruzioni e altre informazioni per il vostro lavoro disponibili per il download in formato PDF

3.1. ixfh20n80q_ixfk20n80q_ixft20n80q.pdf Size:149K _ixys

Symbol Test Conditions Characteristic Values International standard packages (TJ = 25°C, unless otherwise specified) Epoxy meet UL 94 V-0, flammability min. typ. max. classification Low RDS (on) low Qg VDSS VGS = 0 V, ID = 250 µA 800 V Avalanche energy and current rated VGS(th) VDS = VGS, ID = 4 mA 2.5 4.5 V Fast intrinsic rectifier IGSS VGS = ±20 VDC, VDS = 0 ±200 nA Advantages IDSS VDS = VDSS TJ = 25°C25 µA VGS = 0 V TJ = 125°C1 mA Easy to mount RDS(on) VGS

3.2. ixfh20n80p_ixft20n80p_ixfv20n80p.pdf Size:326K _ixys

TO-247 6 g TO-268 5.5 g PLUS220 types 4 g G = Gate D = Drain S = Source Tab = Drain Features l Symbol Test Conditions Characteristic Values International standard packages (TJ = 25° C, unless otherwise specified) Min. Typ. Max. l Fast recovery diode l Unclamped Inductive Switching (UIS) BVDSS VGS = 0 V, ID = 250 µA 800 V rated l VGS(th) VDS = VGS, ID = 4 mA 3.0 5.0 V Low package inductance - easy to drive and to protect IGSS VGS = ± 30 VDC, VDS = 0 ± 200 nA Advantages IDSS

5.1. ixfh24n50q_ixft24n50q_ixfh26n50q_ixft26n50q.pdf Size:145K _ixys

ages Weight TO-247 6 g TO-268 4 g Low RDS (on) Unclamped Inductive Switching (UIS) rated Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Fast switching min. typ. max. Molding epoxies meet UL 94 V-0 flammability classification VDSS VGS = 0 V, ID = 250 µA 500 V VGS(th) VDS = VGS, ID = 4 mA 2.5 4.5 V Advantages IGSS VGS = ±20 VDC, VDS = 0 ±100 nA Easy to mount Space savings IDSS VDS = VDSS TJ = 25°C25 µA High power density

5.2. ixfh26n60q_ixft26n60q.pdf Size:107K _ixys

RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Symbol Test Conditions Characteristic Values Avalanche energy and current rated (TJ = 25°C, unless otherwise specified) Fast intrinsic Rectifier min. typ. max. Advantages VDSS VGS = 0 V, ID = 250µA 600 V VGS(th) VDS = VGS, ID = 4 mA 2.5 4.5 V Easy to mount IGSS VGS = ±20 VDC, VDS = 0 ±200 nA Space savings High power density IDSS VDS = VDSS TJ = 25°C25 µA VGS = 0 V TJ = 125°C1 mA RDS(on) VGS = 10 V, ID

5.3. ixft24n90p_ixfh24n90p.pdf Size:122K _ixys

s TO-268 4 g Easy to mount Space savings High power density Applications: Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. Switched-mode and resonant-mode BVDSS VGS = 0V, ID = 1mA 900 V power supplies DC-DC Converters VGS(th) VDS = VGS, ID = 1mA 3.5 6.5 V Laser Drivers AC and DC motor drives IGSS VGS = ± 30V, VDS = 0V ± 200 nA Robotics and servo controls IDSS VDS = VDSS 25 ?A VGS = 0V TJ = 125°C 2 mA RD

5.4. ixfh26n60p_ixft26n60p_ixfv26n60p.pdf Size:197K _ixys

S D (TAB) PLUS220 & PLUS220SMD 4.0 g G = Gate D = Drain S = Source TAB = Drain Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. Features Fast Recovery diode BVDSS VGS = 0 V, ID = 250 µA 600 V Unclamped Inductive Switching (UIS) VGS(th) VDS = VGS, ID = 4 mA 2.5 5.0 V rated International standard packages IGSS VGS = ±30 V, VDS = 0 V ±100 nA Low package inductance - easy to drive and to protect IDSS VDS = VDSS 25 µA V

5.5. ixfh24n80p_ixfk24n80p_ixft24n80p.pdf Size:158K _ixys

° C Features Symbol Test Conditions Characteristic Values International standard packages (TJ = 25°C, unless otherwise specified) Min. Typ. Max. Fast recovery diode BVDSS VGS = 0 V, ID = 250 µA 800 V Unclamped Inductive Switching (UIS) rated VGS(th) VDS = VGS, ID = 4 mA 3.0 5.0 V Low package inductance - easy to drive and to protect IGSS VGS = ±30 V, VDS = 0 V ±100 nA IDSS VDS = VDSS 25 µA Advantages VGS = 0 V TJ = 125°C 1000 µA RDS(on) VGS = 10 V, ID = 0.5 ID25 40

5.6. ixfh21n50_ixfh24n50_ixfh26n50_ixfm21n50_ixfm24n50_ixfm26n50_ixft24n50_ixft26n50.pdf Size:158K _ixys

ed polysilicon gate cell structure • Unclamped Inductive Switching (UIS) TL 1.6 mm (0.062 in.) from case for 10 s 300 °C rated • Low package inductance Md Mounting torque 1.13/10 Nm/lb.in. - easy to drive and to protect Weight TO-204 = 18 g, TO-247 = 6 g • Fast intrinsic Rectifier Applications • DC-DC converters • Synchronous rectification • Battery chargers Symbol Test Conditions Characteristic Values • Switched-mode and resonant-mode (TJ = 25°C, unless otherwise specified) power

Altri tipi di transistor... IXFT14N80P , IXFT150N17T2 , IXFT15N100Q , IXFT15N100Q3 , IXFT16N120P , IXFT16N80P , IXFT16N90Q , IXFT18N90P , BFR84 , IXFT20N80P , IXFT21N50 , IXFT21N50F , IXFT21N50Q , IXFT24N50 , IXFT24N50Q , IXFT24N80P , IXFT24N90P .