BLF6G22L-40P
MOSFET. Curve Caratteristiche. Datasheet. Tipo: BLF6G22L-40P
Struttura del transistor: LDMOS
Canale di conduzione: N
Potenza massima dissipabile (Pd): 13.5
Tensione di blocco drain source (Uds): 28V
Massima tensione gate-source (Ugs):
Massima corrente continuativa (Id):
Temperatura di giunzione (Tj), °C:
Tempo di salita del fronte di corrente (tr):
Capacità di uscita (Cd), pf:
Resistenza di uscita (Rds), Ohm:
Pack: SOT1121A
Equivalente per i BLF6G22L-40P
BLF6G22L-40P
- Potete trovare data sheet, manuali di istruzioni e altre informazioni per il vostro lavoro disponibili per il download in formato PDF
2.1. blf6g22-180pn_blf6g22ls-180pn.pdf  Size:150K _philips  |
 | -35 dBc
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (2000 MHz to 2200 MHz)
Internally matched for ease of use
Qualified up to a supply voltage of 32 V
BLF6G22(LS)-180PN
NXP Semiconductors
Power LDMOS transistor
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for W-CDMA base stations and multicarr |
3.1. blf6g22-180rn_blf22ls-180rn.pdf Size:98K _philips  |
 | R = -42 dBc
Easy power control
Integrated ESD protection
Enhanced ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (2000 MHz to 2200 MHz)
Internally matched for ease of use
BLF6G22(LS)-180RN
NXP Semiconductors
Power LDMOS transistor
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and
multi carrier application |
3.2. blf6g22s-45.pdf Size:68K _philips  |
 | ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (2000 MHz to 2200 MHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
BLF6G22S-45
NXP Semiconductors
Power LDMOS transistor
1.3 Applications
RF power amplifiers for W-CDMA base stations and multicarrier applications in the
2000 MHz to 2200 MHz frequency range
2. Pinning information
Tabl |
3.3. blf6g22-45.pdf Size:71K _philips  |
 | ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (2000 MHz to 2200 MHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
BLF6G22-45
NXP Semiconductors
Power LDMOS transistor
1.3 Applications
RF power amplifiers for W-CDMA base stations and multicarrier applications in the
2000 MHz to 2200 MHz frequency range
2. Pinning information
Table |
Altri tipi di transistor... BLF6G20LS-75
, BLF6G20S-230PRN
, BLF6G20S-45
, BLF6G21-10G
, BLF6G22-180PN
, BLF6G22-180RN
, BLF6G22-45
, BLF6G22L-40BN
, IRF4905
, BLF6G22LS-100
, BLF6G22LS-130
, BLF6G22LS-180PN
, BLF6G22LS-180RN
, BLF6G22LS-40P
, BLF6G22LS-75
, BLF6G22S-45
, BLF6G27-10
.
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