BLF6G38-100 MOSFET. Curve Caratteristiche. Datasheet.

Tipo: BLF6G38-100

Struttura del transistor: LDMOS

Canale di conduzione: N

Potenza massima dissipabile (Pd): 18.5

Tensione di blocco drain source (Uds): 28V

Massima tensione gate-source (Ugs):

Massima corrente continuativa (Id):

Temperatura di giunzione (Tj), °C:

Tempo di salita del fronte di corrente (tr):

Capacità di uscita (Cd), pf:

Resistenza di uscita (Rds), Ohm:

Pack: SOT502A

Equivalente per i BLF6G38-100

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2.1. blf6g38-50_blf6g38ls-50.pdf Size:153K _philips

with pilot, paging, synchronization and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.23 MHz) at a frequency of 3400 MHz, 3500 MHz and 3600 MHz, a supply voltage of 28 V, an IDq of 450 mA, a power gain of 14 dB, a drain efficiency of 23 % and a peak output power of 70 W: Qualified up to a maximum VDS operation of 32 V Suitable for operation in the 3.4 GHz to 3.8 GHz frequency range Integrated ESD protection Excelle

5.1. blf6g20-45_blf6g20s-45.pdf Size:81K _philips

Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (1800 MHz to 2000 MHz) Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS) BLF6G20-45; BLF6G20S-45 NXP Semiconductors Power LDMOS transistor 1.3 Applications RF power amplifiers for W-CDMA base stations and multi carrier applications in the 1800 MHz to 2000 MHz frequency range. 2

5.2. blf6g10-160rn_blf6g10ls-160rn.pdf Size:154K _philips

ntegrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (700 MHz to 1000 MHz) Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS) BLF6G10(LS)-160RN NXP Semiconductors Power LDMOS transistor 1.3 Applications RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and multi carrier applications in the 700 MHz to 1000 MHz frequ

5.3. blf6g22-180rn_blf22ls-180rn.pdf Size:98K _philips

R = -42 dBc Easy power control Integrated ESD protection Enhanced ruggedness High efficiency Excellent thermal stability Designed for broadband operation (2000 MHz to 2200 MHz) Internally matched for ease of use BLF6G22(LS)-180RN NXP Semiconductors Power LDMOS transistor Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and multi carrier application

5.4. blf6g10l-260prn_ls-260prn.pdf Size:345K _philips

Easy power control Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (700 MHz to 1000 MHz) Internally matched for ease of use Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC BLF6G10L(S)-260PRN NXP Semiconductors Power LDMOS transistor 1.3 Applications RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and multi carrier applications in the 700 MHz to 10

5.5. blf6g10-135rn_blf6g10ls-135rn.pdf Size:145K _philips

ntrol Integrated ESD protection Enhanced ruggedness High efficiency Excellent thermal stability Designed for broadband operation (700 MHz to 1000 MHz) Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS) BLF6G10(LS)-135RN NXP Semiconductors Power LDMOS transistor 1.3 Applications RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and multi carrier applications in the 700 MHz to 1000 M

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ypical 1-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 28 V and an IDq of 100 mA: Average output power =2W Gain = 19.3 dB Efficiency = 31 % ACPR = -39 dBc Easy power control Integrated ESD protection Excellent ruggedness High efficiency BLF6G21-10G NXP Semiconductors Power LDMOS transistor Excellent thermal stability No internal matching for broadband operation Compliant to Directive 2002/95/EC, regarding Restriction of Hazardo

5.7. blf6g27-100_blf6g27ls-100.pdf Size:299K _philips

bability on the CCDF. Channel bandwidth is 1.2288 MHz. [3] Measured within 30 kHz bandwidth. 1.2 Features and benefits Typical 1-carrier W-CDMA performance (single carrier W-CDMA TM1 with 64 DPCH and 100 % clipping; PAR = 9.65 dB at 0.01 % probability on the CCDF; channel bandwidth is 3.84 MHz) at a frequency of 2500 MHz, 2600 MHz and 2700 MHz, a supply voltage of 28 V and an IDq of 900 mA: Average output power = 14 W Power gain = 17 dB Drain efficiency = 23 % ACPR5M = -41 dB

5.8. blf6g27l-50bn_blf6g27ls-50bn.pdf Size:218K _philips

lity Designed for broadband operation (2500 MHz to 2700 MHz) Internally matched for ease of use Integrated current sense Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC 1.3 Applications RF power amplifiers for base stations and multi carrier applications in the 2500 MHz to 2700 MHz frequency range BLF6G27L(S)-50BN NXP Semiconductors Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol B

5.9. blf6g22-180pn_blf6g22ls-180pn.pdf Size:150K _philips

-35 dBc Easy power control Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (2000 MHz to 2200 MHz) Internally matched for ease of use Qualified up to a supply voltage of 32 V BLF6G22(LS)-180PN NXP Semiconductors Power LDMOS transistor Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications RF power amplifiers for W-CDMA base stations and multicarr

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ted ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (1800 MHz to 2000 MHz) Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS) BLF6G20-40 NXP Semiconductors Power LDMOS transistor 1.3 Applications RF power amplifiers for W-CDMA base stations and multi carrier applications in the 1800 MHz to 2000 MHz frequency range. 2. Pinning information

5.11. blf6g15l-40brn.pdf Size:288K _philips

Integrated ESD protection Enhanced ruggedness High efficiency Excellent thermal stability Designed for broadband operation (1450 MHz to 1550 MHz) Internally matched for ease of use Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC. Integrated current sense BLF6G15L-40BRN NXP Semiconductors Power LDMOS transistor 1.3 Applications RF power amplifiers for W-CDMA base stations and multi carrier applications in the 1450 MHz to 1550 MHz frequency ra

5.12. blf6g10s-45.pdf Size:135K _philips

Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (700 MHz to 1000 MHz) Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS) BLF6G10S-45 NXP Semiconductors Power LDMOS transistor 1.3 Applications RF power amplifiers for W-CDMA base stations and multi carrier applications in the 700 MHz to 1000 MHz frequency range. 2. Pinning information Table 2. Pinning

5.13. blf6g10-200rn_blf6g10ls-200rn.pdf Size:161K _philips

Integrated ESD protection Enhanced ruggedness High efficiency Excellent thermal stability Designed for broadband operation (700 MHz to 1000 MHz) Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS) BLF6G10(LS)-200RN NXP Semiconductors Power LDMOS transistor 1.3 Applications RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and multicarrier applications in the 700 MHz to 1000 MHz frequ

5.14. blf6g20-230prn_blf6g20s-230prn.pdf Size:137K _philips

Easy power control Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (1800 MHz to 2000 MHz) Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) BLF6G20(S)-230PRN NXP Semiconductors Power LDMOS transistor 1.3 Applications RF power amplifiers for W-CDMA base stations and multi carrier applications in the 1800 MHz to 2000 MHz fre

5.15. blf6g20-180rn_blf20ls-180rn.pdf Size:103K _philips

= -38 dBc Easy power control Integrated ESD protection Enhanced ruggedness High efficiency Excellent thermal stability Designed for broadband operation (1800 MHz to 2000 MHz) Internally matched for ease of use BLF6G20(LS)-180RN NXP Semiconductors Power LDMOS transistor Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and multi carrier applications

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8 - 13]. PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz) at a frequency of 2500 MHz and 2700 MHz, a supply voltage of 28 V and an IDq of 600 mA: Average output power =9W Power gain = 17 dB Drain efficiency = 23 % ACPR885 = -50.0 dBc in 30 kHz bandwidth Easy power control Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (2500 MHz to 2700 MHz) Internally matched for

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ed ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (1800 MHz to 2000 MHz) Internally matched for ease of use Qualified up to a supply voltage of 32 V Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) BLF6G20-180PN NXP Semiconductors Power LDMOS transistor 1.3 Applications RF power amplifiers for W-CDMA base stations and multicarrier applications in the 1800 MHz to 2000 MH

5.18. blf6g20-75_blf6g20ls-75.pdf Size:93K _philips

nt ruggedness High efficiency Excellent thermal stability Designed for broadband operation (1800 MHz to 2000 MHz) Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) BLF6G20-75; BLF6G20LS-75 NXP Semiconductors Power LDMOS transistor 1.3 Applications RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and multi carrier applications in the 1800 MHz to 2000 MHz frequency range 2. Pinning info

5.19. blf6g27-135_blf6g27ls-135.pdf Size:92K _philips

nd 2700 MHz, a supply voltage of 32 V and an IDq of 1200 mA: Average output power = 20 W Power gain = 16 dB Drain efficiency = 22.5 % ACPR885k = -52.0 dBc in 30 kHz bandwidth Easy power control Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (2500 MHz to 2700 MHz) Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Appli

5.20. blf6g22s-45.pdf Size:68K _philips

ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (2000 MHz to 2200 MHz) Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) BLF6G22S-45 NXP Semiconductors Power LDMOS transistor 1.3 Applications RF power amplifiers for W-CDMA base stations and multicarrier applications in the 2000 MHz to 2200 MHz frequency range 2. Pinning information Tabl

5.21. blf6g27-45_blf6g27s-45.pdf Size:124K _philips

7 dB at 0.01 % probability on CCDF. Channel bandwidth is 1.23 MHz), a supply voltage of 28 V and an IDq of 350 mA: Qualified up to a maximum VDS operation of 32 V Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation Internally matched for ease of use Low gold plating thickness on leads Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) BLF6G27-45; BLF6G27S-45 NXP Se

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ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (2000 MHz to 2200 MHz) Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) BLF6G22-45 NXP Semiconductors Power LDMOS transistor 1.3 Applications RF power amplifiers for W-CDMA base stations and multicarrier applications in the 2000 MHz to 2200 MHz frequency range 2. Pinning information Table

Altri tipi di transistor... BLF6G27L-50BN , BLF6G27LS-100 , BLF6G27LS-135 , BLF6G27LS-40P , BLF6G27LS-50BN , BLF6G27LS-75 , BLF6G27S-45 , BLF6G38-10 , IRFP260 , BLF6G38-10G , BLF6G38-25 , BLF6G38-50 , BLF6G38LS-100 , BLF6G38LS-50 , BLF6G38S-25 , BLF7G10L-250 , BLF7G10LS-250 .