2SC114 . Il Transistor Bipolare. Curve Caratteristiche. Datasheet.

Tipo: 2SC114

Materiale principale: Si

Struttura: NPN

Potenza massima dissipabile (Pc): 0.75

Tensione tra collettore e base (Ucb): 50

Tensione tra collettore ed emettitore (Uce): 0

Tensione tra base ed emettitore (Ueb): 5

Massima corrente continuativa (Ic): 0.2

Temperatura di giunzione (Tj), °C: 150

Frequenza di transizione (ft): 80

Capacità di uscita (Cc), Pf:

Il guadagno di tensione in continua (hfe): 25

Pack: TO5

Equivalente per i 2SC114

2SC114 - Potete trovare data sheet, manuali di istruzioni e altre informazioni per il vostro lavoro disponibili per il download in formato PDF

5.1. 2sc1169.pdf Size:63K _toshiba

5.2. 2sc1173.pdf Size:93K _toshiba

5.3. 2sc1162.pdf Size:29K _hitachi

C = 0.5 A hFE 20 — — VCE = 2 V, IC = 1.5 A (pulse test) Base to emitter voltage VBE — 0.93 1.5 V VCE = 2 V, IC = 1.5 A (pulse test) Collector to emitter saturation VCE(sat) — 0.5 1.0 V IC = 2 A, IB = 0.2 A (pulse test) voltage Gain bandwidth product fT — 180 — MHz VCE = 2 V, IC = 0.2 A Note: 1. The 2SC1162 is grouped by hFE as follows. BC D 60 to 120 100 to 200 160 to 320 Maximum Collector Dissipation Curve Area of Safe Operation 0.8 5 0.75 TC = 25°C IC(max)(DC Operation) 0.6 2

5.4. 2sc1166.pdf Size:49K _no

5.5. 2sc1122a.pdf Size:191K _no

5.6. 2sc1162.pdf Size:392K _secos

ICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector to Base Breakdown Voltage V(BR)CBO 35 - - V IC=1mA, IE=0 Collector to Emitter Breakdown Voltage V(BR)CEO 35 - - V IC=10mA, IB=0 Emitter to Base Breakdown Voltage V(BR)EBO 5 - - V IE=1mA, IC=0 Collector Cut – Off Current ICBO - - 20 ?A VCB=35V, IE=0 Emitter Cut – Off Current IEBO - - 20 ?A VEB=5V, IC=0 hFE (1) 60 - 320 VCE=2V, IC=0.5A DC Current Gain hFE

5.7. 2sc1172.pdf Size:69K _wingshing

Fax:(852)2797 8153 Homepage: http://www.wingshing.com E-mail: wsccltd@hkstar.com

5.8. 2sc1187.pdf Size:73K _usha

5.9. 2sc1163.pdf Size:113K _inchange_semiconductor

ed SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=1.0mA;IB=0 300 V V(BR)CBO Collector-base breakdown voltage IC=100?A;IE=0 300 V V(BR)EBO Emitter-base breakdown voltage IE=100?A;IC=0 4 V VCEsat Collector-emitter saturation voltage IC=50mA ;IB=5mA 1.0 V VBEsat Base-emitter saturation voltage IC=50mA ;IB=5mA 1.5 V ICBO Collector cut-off current VCB=200V; IE=0 10 ?A IEBO Emitter cut-off current VEB=3V; IC=0 10 ?A hFE DC current gain IC=50

5.10. 2sc1170a.pdf Size:129K _inchange_semiconductor

NDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0 500 V VCEsat Collector-emitter saturation voltage IC=2.5A; IB=0.6A 10 V VBEsat Base-emitter saturation voltage IC=2.5A; IB=0.6A 1.2 V ICES Collector cut-off current VCE=1400V; VBE=0 1.0 mA ICBO Collector cut-off current VCB=800V; IE=0 20 ?A IEBO Emitter cut-off current VEB=5V; IC=0 20 ?A hFE-1 DC current gain IC=0.5A ; VCE=10V 10 hFE-2 DC current gain IC=3A ; VCE=10V 5 fT Transition frequency IC=0

5.11. 2sc1161.pdf Size:127K _inchange_semiconductor

V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 6 V VCEsat Collector-emitter saturation voltage IC=500mA; IB=50mA 1.5 V VBE sat Base-emitter saturation voltage IC=500mA; IB=50mA 2.0 V ICBO Collector cut-off current VCB=120V; IE=0 1.0 ?A IEBO Emitter cut-off current VEB=6V; IC=0 1.0 ?A hFE DC current gain IC=200mA ; VCE=5V 30 200 fT Transition frequency IC=200mA ; VCE=10V 5 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1161 PACKAGE OUTLIN

5.12. 2sc1172.pdf Size:115K _inchange_semiconductor

5.13. 2sc1195.pdf Size:113K _inchange_semiconductor

5.14. 2sc1162.pdf Size:141K _inchange_semiconductor

5.15. 2sc1116.pdf Size:113K _inchange_semiconductor

5.16. 2sc1106.pdf Size:113K _inchange_semiconductor

5.17. 2sc1185.pdf Size:127K _inchange_semiconductor

IC=30mA; IB=0 250 V V(BR)CBO Collector-base breakdown voltage IC=1mA; IE=0 300 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 5 V VCEsat Collector-emitter saturation voltage IC=500mA; IB=100mA 1.0 V VBEsat Base-emitter saturation voltage IC=500mA; IB=100mA 1.5 V ICBO Collector cut-off current VCB=200V;IE=0 10 ?A IEBO Emitter cut-off current VEB=5V; IC=0 10 ?A hFE DC current gain IC=0.4A ; VCE=10V 40 200 2 Inchange Semiconductor Product Specification Silicon NPN Power Trans

5.18. 2sc1173.pdf Size:123K _inchange_semiconductor

5.19. 2sc1157.pdf Size:113K _inchange_semiconductor

ase-emitter saturation voltage IC=300mA IB=30m A 1.5 V V(BR)CBO Collector-base breakdown voltage IC=100?A;IE=0 110 V V(BR)CEO Collector-emitter breakdown voltage IC=1mA; IB=0 100 V V(BR)EBO Emitter-base breakdown voltage IE=100?A; IC=0 5 V ICBO Collector cut-off current VCB=110V; IE=0 1.0 ?A IEBO Emitter cut-off current VEB=5V; IC=0 1.0 ?A hFE DC current gain IC=300mA ; VCE=4V 20 300 fT Transition frequency IE=100mA ; VCB=10V 70 MHz 2 Inchange Semiconductor Product Specification S

5.20. 2sc1170.pdf Size:115K _inchange_semiconductor

5.21. 2sc1162.pdf Size:180K _lge

,IC=0 5 V ?A Collector cut-off current ICBO VCB=35V,IE=0 20 ?A Emitter cut-off current IEBO VEB=5V,IC=0 20 hFE1 VCE=2V,IC=0.5A 60 320 DC current gain hFE2 VCE=2V,IC=1.5A * 20 Collector-emitter saturation voltage VCE(sat) IC=2A,IB=200mA 1 V Base-collector voltage VBE VCE=2V,IC=1.5A 1.5 V Transition frequency fT VCE=2V,IC=200mA 180 MHz * pulse test CLASSIFICATION OF hFE1 Rank B C D Range 60-120 100-200 160-320  2SC1162(NPN) TO-126 Transistor Typical Characteristics

Altri tipi di transistor... 2SC1130 , 2SC1131 , 2SC1132 , 2SC1133 , 2SC1134 , 2SC1136 , 2SC1138 , 2SC1139 , BC157 , 2SC1140 , 2SC1141 , 2SC1142 , 2SC1143 , 2SC1144 , 2SC1145 , 2SC115 , 2SC1150 .