Tutti i transistor e i loro equivalenti


Tra 3 e 20 caratteri (Solo numeri e lettere)
 
BC369
  BC369
  BC369
 
BC369
  BC369
  BC369
 
BC369
  BC369
 
 
List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC693
2SC693F .. 2SC902
2SC903 .. 2SD107
2SD1070 .. 2SD125AH
2SD126 .. 2SD1451
2SD1452 .. 2SD1668Q
2SD1668R .. 2SD1859
2SD186 .. 2SD2104
2SD2105 .. 2SD246
2SD2460 .. 2SD369
2SD37 .. 2SD596-DV4
2SD596-DV5 .. 2SD794A-R
2SD794A-Y .. 2STL1360
2STL2580 .. 40269
40279 .. 40854
40871 .. A748C
A749 .. ACY27
ACY28 .. AF180
AF181 .. ASY90
ASY90-1 .. BC159B
BC159C .. BC251A
BC251B .. BC343
BC344 .. BC487L
BC488 .. BC817-25L
BC817-25LT1 .. BC860AWT1
BC860B .. BCW15K
BCW15L .. BCW99B
BCW99C .. BCY77-8
BCY77-9 .. BD234
BD234-10 .. BD372B
BD372B-10 .. BD635
BD636 .. BD955
BD955F .. BDW25-4
BDW25-6 .. BDY12D
BDY13 .. BF244
BF248 .. BF437
BF439 .. BF871BA
BF871EA .. BFQ43
BFQ43S .. BFS55A
BFS57 .. BFW16A
BFW17 .. BFY87R
BFY87V .. BLY21
BLY22 .. BST16
BST39 .. BSX62-SM
BSX62B .. BTC1510J3
BTC1510T3 .. BU807F
BU807FI .. BUP22A
BUP22B .. BUV70
BUV70F .. BUX98P
BUX98PI .. CC328-25
CC328-40 .. CFD1264P
CFD1264Q .. CK14
CK14A .. CN8050
CN8050C .. CSA1048O
CSA1048Y .. CSC1398A
CSC1398P .. CSD545
CSD545D .. D150
D1666 .. D40D8
D40D9 .. D45VH2
D45VH3 .. DP0150ADJ
DP0150ALP4 .. DTA143E
DTA143ECA .. DTC144WE
DTC144WEA .. ECG100
ECG101 .. ECG395
ECG396 .. ESM2633
ESM2666 .. FCS9013G
FCS9013H .. FJX4006R
FJX4007R .. FMMT5855
FMMT5856 .. FTR129
FTR158 .. GC505
GC506 .. GES5308A
GES5368 .. GME9001
GME9002 .. GT328A
GT328B .. HA9531A
HA9532 .. HPA251R-2
HPA251R-3 .. IDC3281
IDC3298 .. JE9016F
JE9016G .. KN4A4P
KN4A4Z .. KRA756U
KRA757E .. KRC828E
KRC828F .. KSA954-O
KSA954-Y .. KSC2757-O
KSC2757-R .. KSD5011
KSD5012 .. KST4403
KST5086 .. KT3179A-9
KT3180A-9 .. KT6127D
KT6127E .. KT8143N
KT8143P .. KT880G
KT880V .. KTA711T
KTA711U .. KTD1510
KTD1530 .. MA9003
MA901 .. MJ10005
MJ10005P .. MJD3055T4
MJD31 .. MJE520
MJE520K .. MM558-02
MM559-01 .. MMBT5550
MMBT5550L .. MO870
MP10 .. MP4401
MP4403 .. MPS2713
MPS2714 .. MPSA70
MPSA75 .. MRF644
MRF646 .. NA02HY
NA11E .. NB012HU
NB012HV .. NB211Z
NB211ZG .. NKT0028
NKT102 .. NPS4889
NPS4890 .. NTE101
NTE102 .. OC74
OC74N .. PBSS4350Z
PBSS4420D .. PET3706
PET6001 .. PN5550R
PN5551 .. R8224
R8259 .. RN1441
RN1442 .. RN2610
RN2611 .. S130-191
S1309 .. SDM4014
SDM4015 .. SGSF564
SGSF565 .. SRA2207U
SRA2207UF .. STC403F
STC403L .. SXTA92
SXTA93 .. TA2053A
TA2090A .. TIP117
TIP117F .. TIPP111
TIPP112 .. TN3725
TN3742 .. TP5551R
TP5816 .. UMT3585
UMT3904 .. UN911F
UN911K .. ZT2369A
ZT24 .. ZTX3903
ZTX3904 .. ZXTP23140BFH
ZXTP25012EFH .. ZXTPS720MC
 
Tutti i transistor e i loro equivalenti. Curve Caratteristiche. Datasheet
 

BC369 . Il Transistor Bipolare. Curve Caratteristiche. Datasheet.

Tipo: BC369

Materiale principale: Si

Struttura: PNP

Potenza massima dissipabile (Pc): 0.8

Tensione tra collettore e base (Ucb): 25

Tensione tra collettore ed emettitore (Uce): 20

Tensione tra base ed emettitore (Ueb): 5

Massima corrente continuativa (Ic): 1

Temperatura di giunzione (Tj), °C: 150

Frequenza di transizione (ft): 65

Capacità di uscita (Cc), Pf:

Il guadagno di tensione in continua (hfe): 85

Pack: TO226

Equivalente per i BC369

BC369 PDF doc:

1.1. bc368_bc369.pdf Size:129K _motorola

BC369
BC369
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC368/D Amplifier Transistors NPN COLLECTOR COLLECTOR BC368 2 2 PNP 3 3 BC369 BASE BASE NPN PNP 1 1 Voltage and current are negative EMITTER EMITTER for PNP transistors MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage VCEO 20 Vdc CollectorEmitter Voltage VCES 25 Vdc EmitterBase Voltage VEBO 5.0 Vdc Collector Current Continuous IC 1.0 Adc 1 2 Total Device Dissipation @ TA = 25C PD 625 mW 3 Derate above 25C 5.0 mW/C CASE 2904, STYLE 14 Total Device Dissipation @ TC = 25C PD 1.5 Watt TO92 (TO226AA) Derate above 25C 12 mW/C Operating and Storage Junction TJ, Tstg 55 to +150 C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 C/W Thermal Resistance, Junction to Case RqJC 83.3 C/W ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF C

1.2. bc369_3.pdf Size:49K _philips

BC369
BC369
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC369 PNP medium power transistor 1999 Apr 26 Product specification Supersedes data of 1997 Feb 28 Philips Semiconductors Product specification PNP medium power transistor BC369 FEATURES PINNING High current (max. 1 A) PIN DESCRIPTION Low voltage (max. 20 V). 1 base 2 collector APPLICATIONS 3 emitter General purpose switching and amplification Power applications such as audio output stages. 1 handbook, halfpage 2 2 3 1 DESCRIPTION NPN medium power transistor in a TO-92; SOT54 plastic 3 MAM285 package. PNP complement: BC368. Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter --32 V VCEO collector-emitter voltage open base --20 V VEBO emitter-base voltage open collector --5V IC collector current (DC) --1A ICM peak colle

1.3. bc369.pdf Size:45K _fairchild_semi

BC369
BC369
BC369 B TO-92 C E PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2 A. Sourced from Process 77. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 20 V VCES Collector-Base Voltage 25 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 1.5 A Operating and Storage Junction Temperature Range -55 to +150 C TJ, Tstg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3) All voltages (V) and currents (A) are negative polarity for PNP transistors. Thermal Characteristics TA = 25C unless otherwise noted Symbol Characterist

1.4. bc368_bc369.pdf Size:60K _onsemi

BC369
BC369
NPN - BC368; PNP - BC369 Amplifier Transistors Voltage and Current are Negative for PNP Transistors Features http://onsemi.com These are Pb-Free Devices* TO-92 MAXIMUM RATINGS CASE 29 Rating Symbol Value Unit STYLE 14 Collector - Emitter Voltage VCEO 20 Vdc 1 1 2 2 Collector - Emitter Voltage VCES 25 Vdc 3 3 STRAIGHT LEAD BENT LEAD Emitter - Base Voltage VEBO 5.0 Vdc BULK PACK TAPE & REEL Collector Current - Continuous IC 1.0 Adc AMMO PACK Total Device Dissipation @ TA = 25C PD 625 mW Derate above 25C 5.0 mW/C Total Device Dissipation @ TC = 25C PD 1.5 W Derate above 25C 12 mW/C MARKING DIAGRAMS Operating and Storage Junction TJ, Tstg -55 to +150 C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit BC36 BC 8 369 Thermal Resistance, Junction-to-Ambient RqJA 200 C/W AYWW G AYWW G Thermal Resistance, Junction-to-Case RqJC 83.3 C/W G G Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stre

1.5. bc369.pdf Size:105K _cdil

BC369
BC369
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTOR BC369 TO-92 BCE Transistor in TO-92 Plastic Package Intended for Low Voltage, High Current LF Applications, Suitable for Class-B Audio Output Stages up to 3W ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector -Emitter Voltage VCES 25 V Collector -Emitter Voltage VCEO 20 V Emitter Base Voltage VEBO 5.0 V Collector Current IC 1.0 A Collector Current Peak Value ICM 2.0 A Base Current IB 100 mA Base Current Peak Value IBM 200 mA Power Dissipation @ Ta=25 deg C PTA 0.8 W @ Tc=25 deg C PTC 1.0 W Junction Temperature Tj 150 deg C Storage Temperature Range Tstg -65 to +150 deg C Thermal Resistance Junction to Ambient in Free Air Rth (j-a) 156 deg C/W Junction to Ambient * Rth (j-a) 125 deg C/W Junction to Case Rth (j-c) 60 deg C/W *Mounted on printed-circuit board , maximum lead length 4mm, mounting pad for collector lead m

Altri tipi di transistor... BC361-6 , BC362 , BC363 , BC364 , BC365 , BC366 , BC367 , BC368 , 9013 , BC370 , BC370-5 , BC370-6 , BC370A , BC370B , BC371 , BC372 , BC372-16 .

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