Tutti i transistor e i loro equivalenti


Tra 3 e 20 caratteri (Solo numeri e lettere)
 
BC369
  BC369
  BC369
 
BC369
  BC369
  BC369
 
BC369
  BC369
 
 
List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC693
2SC693F .. 2SC902
2SC903 .. 2SD107
2SD1070 .. 2SD125AH
2SD126 .. 2SD1451
2SD1452 .. 2SD1668Q
2SD1668R .. 2SD1859
2SD186 .. 2SD2104
2SD2105 .. 2SD246
2SD2460 .. 2SD369
2SD37 .. 2SD596-DV4
2SD596-DV5 .. 2SD794A-R
2SD794A-Y .. 2STL1360
2STL2580 .. 40269
40279 .. 40854
40871 .. A748C
A749 .. ACY27
ACY28 .. AF180
AF181 .. ASY90
ASY90-1 .. BC159B
BC159C .. BC251A
BC251B .. BC343
BC344 .. BC487L
BC488 .. BC817-25L
BC817-25LT1 .. BC860AWT1
BC860B .. BCW15K
BCW15L .. BCW99B
BCW99C .. BCY77-8
BCY77-9 .. BD234
BD234-10 .. BD372B
BD372B-10 .. BD635
BD636 .. BD955
BD955F .. BDW25-4
BDW25-6 .. BDY12D
BDY13 .. BF244
BF248 .. BF437
BF439 .. BF871BA
BF871EA .. BFQ43
BFQ43S .. BFS55A
BFS57 .. BFW16A
BFW17 .. BFY87R
BFY87V .. BLY21
BLY22 .. BST16
BST39 .. BSX62-SM
BSX62B .. BTC1510J3
BTC1510T3 .. BU508DXI
BU508FI .. BUL6822
BUL6822A .. BUV39
BUV40 .. BUX80/6
BUX80/7 .. C9080
C9081 .. CEN-U45
CEN-U51 .. CJD3055
CJD31C .. CMPT918
CMPT930 .. CS9015A
CS9015B .. CSC1008
CSC1008G .. CSD1563AP
CSD1563AQ .. D10-28B
D100 .. D39C3
D39C4 .. D44VM7
D44VM8 .. DKS21
DKS22 .. DTA123EUA
DTA123J .. DTC143XE
DTC143XEA .. DZT491
DZT5401 .. ECG351
ECG352 .. ESM117
ESM118 .. FB3727
FB3728 .. FJV3113R
FJV3114R .. FMMT4964
FMMT497 .. FT400B
FT401 .. GC112
GC115 .. GES4400
GES4401 .. GI2715
GI2716 .. GT309D
GT309E .. HA7540
HA7541 .. HN1C01F
HN1C01FE .. HUN5236
HUN5237 .. JC559A
JC559C .. KF630D
KF630S .. KRA729U
KRA730E .. KRC662U
KRC663F .. KSA643
KSA643-G .. KSC2682-Y
KSC2688 .. KSD2012
KSD2012-G .. KSR2102
KSR2103 .. KT315E-1
KT315E1 .. KT610A
KT610B .. KT8127A
KT8127A-1 .. KT852G
KT852V .. KTA1703
KTA1704 .. KTC813U
KTC814U .. MA287
MA393 .. MH0812
MH0813 .. MJ8503
MJ8504 .. MJE41
MJE41A .. MM4033
MM4036 .. MMBT4403WT1
MMBT4888 .. MMUN2134LT1
MMUN2134LT2 .. MP3905R
MP3906 .. MPQ5447
MPQ5449 .. MPS834
MPS835 .. MRF427
MRF428 .. MZT127
MZT2955 .. NB011FJ
NB011FK .. NB123F
NB123FH .. NB323H
NB323K .. NPS3721
NPS3725 .. NSS40300
NSS40300DD .. OC466K
OC467 .. PBSS306NX
PBSS306NZ .. PEMB30
PEMB4 .. PN4250A
PN4257 .. PZTA14
PZTA27 .. RN1307
RN1308 .. RN2401
RN2402 .. RT484
RT497M .. SD3866AF
SD3960F .. SGS130
SGS131 .. SRA2202EF
SRA2202M .. STA3360PI
STA723D .. SUT161G
SUT290 .. TA1703B
TA1704 .. TI804
TI805 .. TIPL13004
TIPL13005 .. TN3398
TN3402 .. TP4258
TP4258A .. UMG1N
UMG2N .. UN6214
UN6215Q .. ZT1486A
ZT1487 .. ZTX342L
ZTX342M .. ZXTN25100DZ
ZXTN26020DMF .. ZXTPS720MC
 
Tutti i transistor e i loro equivalenti. Curve Caratteristiche. Datasheet
 

BC369 . Il Transistor Bipolare. Curve Caratteristiche. Datasheet.

Tipo: BC369

Materiale principale: Si

Struttura: PNP

Potenza massima dissipabile (Pc): 0.8

Tensione tra collettore e base (Ucb): 25

Tensione tra collettore ed emettitore (Uce): 20

Tensione tra base ed emettitore (Ueb): 5

Massima corrente continuativa (Ic): 1

Temperatura di giunzione (Tj), °C: 150

Frequenza di transizione (ft): 65

Capacità di uscita (Cc), Pf:

Il guadagno di tensione in continua (hfe): 85

Pack: TO226

Equivalente per i BC369

BC369 PDF doc:

1.1. bc368_bc369.pdf Size:129K _motorola

BC369
BC369
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC368/D Amplifier Transistors NPN COLLECTOR COLLECTOR BC368 2 2 PNP 3 3 BC369 BASE BASE NPN PNP 1 1 Voltage and current are negative EMITTER EMITTER for PNP transistors MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage VCEO 20 Vdc CollectorEmitter Voltage VCES 25 Vdc EmitterBase Voltage VEBO 5.0 Vdc Collector Current Continuous IC 1.0 Adc 1 2 Total Device Dissipation @ TA = 25C PD 625 mW 3 Derate above 25C 5.0 mW/C CASE 2904, STYLE 14 Total Device Dissipation @ TC = 25C PD 1.5 Watt TO92 (TO226AA) Derate above 25C 12 mW/C Operating and Storage Junction TJ, Tstg 55 to +150 C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 C/W Thermal Resistance, Junction to Case RqJC 83.3 C/W ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF C

1.2. bc369_3.pdf Size:49K _philips

BC369
BC369
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC369 PNP medium power transistor 1999 Apr 26 Product specification Supersedes data of 1997 Feb 28 Philips Semiconductors Product specification PNP medium power transistor BC369 FEATURES PINNING High current (max. 1 A) PIN DESCRIPTION Low voltage (max. 20 V). 1 base 2 collector APPLICATIONS 3 emitter General purpose switching and amplification Power applications such as audio output stages. 1 handbook, halfpage 2 2 3 1 DESCRIPTION NPN medium power transistor in a TO-92; SOT54 plastic 3 MAM285 package. PNP complement: BC368. Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter --32 V VCEO collector-emitter voltage open base --20 V VEBO emitter-base voltage open collector --5V IC collector current (DC) --1A ICM peak colle

1.3. bc369.pdf Size:45K _fairchild_semi

BC369
BC369
BC369 B TO-92 C E PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2 A. Sourced from Process 77. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 20 V VCES Collector-Base Voltage 25 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 1.5 A Operating and Storage Junction Temperature Range -55 to +150 C TJ, Tstg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3) All voltages (V) and currents (A) are negative polarity for PNP transistors. Thermal Characteristics TA = 25C unless otherwise noted Symbol Characterist

1.4. bc368_bc369.pdf Size:60K _onsemi

BC369
BC369
NPN - BC368; PNP - BC369 Amplifier Transistors Voltage and Current are Negative for PNP Transistors Features http://onsemi.com These are Pb-Free Devices* TO-92 MAXIMUM RATINGS CASE 29 Rating Symbol Value Unit STYLE 14 Collector - Emitter Voltage VCEO 20 Vdc 1 1 2 2 Collector - Emitter Voltage VCES 25 Vdc 3 3 STRAIGHT LEAD BENT LEAD Emitter - Base Voltage VEBO 5.0 Vdc BULK PACK TAPE & REEL Collector Current - Continuous IC 1.0 Adc AMMO PACK Total Device Dissipation @ TA = 25C PD 625 mW Derate above 25C 5.0 mW/C Total Device Dissipation @ TC = 25C PD 1.5 W Derate above 25C 12 mW/C MARKING DIAGRAMS Operating and Storage Junction TJ, Tstg -55 to +150 C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit BC36 BC 8 369 Thermal Resistance, Junction-to-Ambient RqJA 200 C/W AYWW G AYWW G Thermal Resistance, Junction-to-Case RqJC 83.3 C/W G G Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stre

1.5. bc369.pdf Size:105K _cdil

BC369
BC369
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTOR BC369 TO-92 BCE Transistor in TO-92 Plastic Package Intended for Low Voltage, High Current LF Applications, Suitable for Class-B Audio Output Stages up to 3W ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector -Emitter Voltage VCES 25 V Collector -Emitter Voltage VCEO 20 V Emitter Base Voltage VEBO 5.0 V Collector Current IC 1.0 A Collector Current Peak Value ICM 2.0 A Base Current IB 100 mA Base Current Peak Value IBM 200 mA Power Dissipation @ Ta=25 deg C PTA 0.8 W @ Tc=25 deg C PTC 1.0 W Junction Temperature Tj 150 deg C Storage Temperature Range Tstg -65 to +150 deg C Thermal Resistance Junction to Ambient in Free Air Rth (j-a) 156 deg C/W Junction to Ambient * Rth (j-a) 125 deg C/W Junction to Case Rth (j-c) 60 deg C/W *Mounted on printed-circuit board , maximum lead length 4mm, mounting pad for collector lead m

Altri tipi di transistor... BC361-6 , BC362 , BC363 , BC364 , BC365 , BC366 , BC367 , BC368 , 9013 , BC370 , BC370-5 , BC370-6 , BC370A , BC370B , BC371 , BC372 , BC372-16 .

(C) 2005 All Right reserved BJT | | MOSFET | | IGBT | | Tutti i fabbricanti di Transistor | | CODICI PER COMPONENTI SMD | | Pack | | Contact alltransistors[@]gmail.com