| |
BC517P
. Il Transistor Bipolare. Curve Caratteristiche. Datasheet. Tipo: BC517P
Materiale principale: Si
Struttura: NPN
Potenza massima dissipabile (Pc): 0.625
Tensione tra collettore e base (Ucb): 40
Tensione tra collettore ed emettitore (Uce): 30
Tensione tra base ed emettitore (Ueb): 10
Massima corrente continuativa (Ic): 0.4
Temperatura di giunzione (Tj), °C: 150
Frequenza di transizione (ft): 120
Capacità di uscita (Cc), Pf: 5
Il guadagno di tensione in continua (hfe): 30000
Pack: TO92
Equivalente per i BC517P
BC517P
- Potete trovare data sheet, manuali di istruzioni e altre informazioni per il vostro lavoro disponibili per il download in formato PDF
5.1. bc517rev.pdf  Size:206K _motorola  |
 | or–Base Breakdown Voltage V(BR)CBO 40 — — Vdc
(IC = 10 mAdc, IE = 0)
Emitter–Base Breakdown Voltage V(BR)EBO 10 — — Vdc
(IE = 100 nAdc, IC = 0)
Collector Cutoff Current ICES — — 500 nAdc
(VCE = 30 Vdc)
Collector Cutoff Current ICBO — — 100 nAdc
(VCB = 30 Vdc, IE = 0)
Emitter Cutoff Current IEBO — — 100 nAdc
(VEB = 10 Vdc, IC = 0)
Motorola Small–Signal Transistors, FETs and Diodes Device Data 1
© Motorola, Inc. 1996
BC517
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) |
5.2. bc517.pdf Size:43K _philips  |
 | tor current - 800 mA
IB base current (DC) - 100 mA
Ptot total power dissipation Tamb ? 25 °C; note 1 - 500 mW
Tstg storage temperature -65 +150 °C
Tj junction temperature - 150 °C
Tamb operating ambient temperature -65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 23 2
Philips Semiconductors Product specification
NPN Darlington transistor BC517
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to a |
5.3. bc517_4.pdf Size:49K _philips  |
 | tor current - 800 mA
IB base current (DC) - 100 mA
Ptot total power dissipation Tamb ? 25 °C; note 1 - 500 mW
Tstg storage temperature -65 +150 °C
Tj junction temperature - 150 °C
Tamb operating ambient temperature -65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 23 2
Philips Semiconductors Product specification
NPN Darlington transistor BC517
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to a |
5.4. bc517.pdf Size:27K _fairchild_semi  |
 | r-Emitter Breakdown Voltage * IC = 2.0mA, IB = 0 30 V
V(BR)CBO Collector-Base Breakdown Voltage IC = 10µA, IE = 0 40 V
V(BR)EBO Emitter-Base Breakdown Voltage IE = 100nA, IC = 0 10 V
ICBO Collector Cut-off Current VCB = 30V, IE = 0 100 nA
On Characteristics *
hFE DC Current Gain VCE = 2.0V, IC = 20mA 30,000
VCE(sat) Collector-Emitter Saturation Voltage IC = 100mA, IB = 0.1mA 1 V
VBE(on) Base-Emitter On Voltage IC = 10mA, VCE = 5.0V 1.4 V
Thermal Characteristics Ta = 25°C unless otherwise |
5.5. bc517.pdf Size:35K _kec  |
 | IEBO VEB=10V, IC=0
Emitter Cut-off Current - - 1.0
A
hFE IC=100mA, VCE=2V
DC Current Gain 30k - -
VCE(sat) IC=100mA, IB=1mA
Collector-Emitter Saturation Voltage - - 1.0 V
VBE(sat) IC=100mA, IB=1mA
Base-Emitter Saturation Voltage - 1.5 2.0 V
fT IC=100mA, VCE=2V, f=100MHz
Current Gain Bandwidth Product - 220 - MHz
Cob VCB=10V, f=1MHz, IE=0
Collector Output Capacitance - 5.0 - pF
1999. 11. 30 Revision No : 1 1/2
A
J
C
L
M
BC517
h - I I - V CE(sat)
FE C C
6 3
10 10
Ta=125 C |
5.6. hbc517.pdf Size:45K _hsmc  |
 | ollector to Emitter Voltage ........................................................................................................................ 30 V
VEBO Emitter to Base Voltage .............................................................................................................................. 10 V
IC Collector Current ........................................................................................................................................ 500 mA
Electrical Charac |
Altri tipi di transistor... BC513B
, BC513C
, BC514
, BC514A
, BC514B
, BC514C
, BC516
, BC517
, BC547B
, BC517S
, BC520
, BC520B
, BC520C
, BC521
, BC521C
, BC521D
, BC522
.
|
