| |
BC858AW
. Il Transistor Bipolare. Curve Caratteristiche. Datasheet. Tipo: BC858AW
Materiale principale: Si
Struttura: PNP
Potenza massima dissipabile (Pc): 0.25
Tensione tra collettore e base (Ucb): 30
Tensione tra collettore ed emettitore (Uce): 30
Tensione tra base ed emettitore (Ueb): 5
Massima corrente continuativa (Ic): 0.1
Temperatura di giunzione (Tj), °C: 150
Frequenza di transizione (ft): 250
CapacitĂ di uscita (Cc), Pf: 3
Il guadagno di tensione in continua (hfe): 140
Pack: SOT323
Equivalente per i BC858AW
BC858AW
- Potete trovare data sheet, manuali di istruzioni e altre informazioni per il vostro lavoro disponibili per il download in formato PDF
1.1. bc856awt_bc857awt_bc858awt.pdf Size:251K _motorola |
| 7BWT1 = 3F;
BC858AWT1 = 3J; BC858BWT1 = 3K; BC858CWT1 = 3L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage BC856 Series V(BR)CEO –65 — — V
(IC = –10 mA) BC857 Series –45 — —
BC858 Series –30 — —
Collector–Emitter Breakdown Voltage BC856 Series V(BR)CES –80 — — V
(IC = –10 µA, VEB = 0) BC857 Series –50 — —
BC858 Series –30 — —
Collector–Base Breakdown Voltage BC856 Series V(BR)C |
1.2. bc856bwt1_bc857bwt1_bc858awt1-series.pdf Size:143K _onsemi |
| *Date Code orientation may vary depending
(Note 1) TA =25?C
upon manufacturing location.
Thermal Resistance, R?JA 883 ?C/W
Junction--to--Ambient
ORDERING INFORMATION
See detailed ordering and shipping information in the package
Junction and Storage Temperature TJ, Tstg -- 55 to +150 ?C
dimensions section on page 5 of this data sheet.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating C |
1.3. bc856aw-bc857aw-bc858aw.pdf Size:444K _secos |
|
DEVICE MARKING
BC856AW=3A; BC856BW=3B;
BC857AW=3E; BC857BW=3F; BC857CW=3G;
BC858AW=3J; BC858BW=3K: BC858CW=3L
http://www.SeCoSGmbH.com Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 4
BC856AW, BW
BC857AW, BW, CW
Elektronische Bauelemente
BC858AW, BW, CW
ELECTRICAL CHARACTERISTICS(Tamb=25? unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage BC856 -80
BC857 VCBO Ic= -10µA, I |
1.4. bc856aw_bc857aw_bc858aw.pdf Size:546K _wietron |
| cs Symbol Min Typ Max Unit
Off Characteristics
BC856 Series -65 - -
V
Collector-Emitter Breakdown Voltage
V(BR)CEO -45
- -
BC857 Series
IC=-10mA
- -
BC858 Series -30
BC856 Series -80 - -
V
Collector-Emitter Breakdown Voltage
V(BR)CES -50
- -
BC857 Series
IC=-10uA, VEB=0
- -
BC858 Series -30
BC856 Series V
-80 - -
Collector-Base Breakdown Voltage
V(BR)CBO -50
BC857 Series - -
IC=-10µA
- -
BC858 Series
-30
BC856 Series - -
-5.0
V
Emitter-Base Breakdown Volta |
Altri tipi di transistor... BC857CR
, BC857CW
, BC857CWT1
, BC857S
, BC858
, BC858A
, BC858ALT1
, BC858AR
, KD503
, BC858AWT1
, BC858B
, BC858BLT1
, BC858BR
, BC858BW
, BC858BWT1
, BC858C
, BC858CLT1
.
|