BCP56-16 Datasheet. Il Transistor Bipolare. Curve Caratteristiche

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 4 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 2/9 BCP56-16 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum rating Symbol Parameter Value Unit VCBO Collector-base voltage (IE = 0) 100 V VCEO Collector-emitter voltage (IB = 0) 80 V VEBO Emitter-base voltage (IC = 0) 5 V IC Collector current 1 A ICM Collector peak current (tP < 5ms) 1.

5.1. bcp56t1r.pdf Size:200K _motorola

e VCBO 100 Vdc Emitter-Base Voltage VEBO 5 Vdc Collector Current IC 1 Adc Total Power Dissipation @ TA = 25�C(1) PD 1.5 Watts Derate above 25�C 12 mW/�C Operating and Storage Temperature Range TJ, Tstg �65 to 150 �C DEVICE MARKING BCP56T1 = BH BCP56-10T1 = BK BCP56-16T1 = BL THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance R?JA 83.3 �C/W Junction-to-Ambient (surface mounted) Maximum Temperature for Soldering Purposes TL 260 �C Time in Solder Bath 10 Sec 1

5.2. bcp54_bcp55_bcp56_3.pdf Size:48K _philips

tor current (DC) - 1A ICM peak collector current - 1.5 A IBM peak base current - 0.2 A Ptot total power dissipation Tamb ? 25 �C; note 1 - 1.33 W Tstg storage temperature -65 +150 �C Tj junction temperature - 150 �C Tamb operating ambient temperature -65 +150 �C Note 1. Device mounted on printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see �Thermal considerations for SOT223 in the General Part of associated Handbook

5.3. bc639_bcp56_bcx56.pdf Size:153K _philips

IC = 150 mA 63 - 160 hFE selection -16 VCE =2V; IC = 150 mA 100 - 250 BC639; BCP56; BCX56 NXP Semiconductors 80 V, 1 A NPN medium power transistors 2. Pinning information Table 3. Pinning Pin Description Simplified outline Symbol SOT54 1 base 2 2 collector 3 emitter 1 1 2 3 3 001aab347 sym056 SOT54A 1 base 2 2 collector 3 emitter 1 1 2 3 3 001aab348 sym056 SOT54 variant 1 base 2 2 collector 3 emitter 1 1 2 3 3 001aab447 sym056 SOT223 1 base 4 2, 4 2

5.4. bcp55-bcp56.pdf Size:71K _st

ermal Resistance Junction-Ambient o Rthj-tab � Thermal Resistance Junction-Collecor Tab Max 8 C/W � Mounted on a ceramic substrate area = 30 x 35 x 0.7 mm ELECTRICAL CHARACTERISTICS (T = 25 oC unless otherwise specified) case Symbol Parameter Test Conditions Min. Typ. Max. Unit I Collector Cut-off V = 30 V 100 nA CBO CB Current (IE = 0) VCB = 30 V Tj = 125 oC 10 �A V(BR)CBO Collector-Base IC = 100 �A Breakdown Voltage for BCP55 60 V (I = 0) for BCP56 100 V E V ? Collector-Emitter

5.5. bcp56.pdf Size:39K _fairchild_semi

C 8 mW/�C 125 �C/W R?JA Thermal Resistance, Junction to Ambient *Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2. �1998 Fairchild Semiconductor Corporation Pr3947_REV A BCP56 NPN General Purpose Amplifier (continued) Electrical Characteristics T A = 25�C unless otherwise noted Symbol Parameter Test Conditions Min Max Units OFF CHARACTERISTICS 80 V BVCEO Collector-Emitter Breakdown Voltage IC = 10 mA 100 V BVCBO Collector-Base Br

5.6. bcp54m_bcp55m_bcp56m.pdf Size:31K _siemens

-11-1998 Semiconductor Group 1 1998-11-01 BCP 54M ... BCP 56M Electrical Characteristics at TA = 25�C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V V(BR)CEO IC = 10 mA, IB = 0 BCP 54M 45 - - BCP 55M 60 - - BCP 56M 80 - - Collector-base breakdown voltage V(BR)CBO IC = 100 �A, IB = 0 BCP 54M 45 - - BCP 55M 60 - - BCP 56M 100 - - Emitter-base breakdown voltage 5 - - V(BR)EBO IE = 10 �A, IC =

5.7. bcp54_bcp55_bcp56.pdf Size:131K _siemens

200 Total power dissipation, TS = 124 ?C1) Ptot 1.5 W Junction temperature Tj 150 ?C Storage temperature range Tstg � 65 � + 150 Thermal Resistance Junction - ambient1) Rth JA ? 72 K/W Junction - soldering point Rth JS ? 17 1) Package mounted on epoxy pcb 40 mm ? 40 mm ? 1.5 mm/6 cm2 Cu. Semiconductor Group 2 BCP 54 ... BCP 56 Electrical Characteristics at TA = 25 ?C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC characteristics Collector-emitter

5.8. bcp56.pdf Size:42K _diodes

5.9. bcp56t1-d.pdf Size:104K _onsemi

age VEBO 5 Vdc Collector Current IC 1 Adc SOT-223 CASE 318E Total Power Dissipation PD STYLE 1 @ TA = 25�C (Note 1) 1.5 W Derate above 25�C 12 mW/�C Operating and Storage TJ, Tstg -65 to 150 �C MARKING DIAGRAM Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit AYW xxxxxG Thermal Resistance, RqJA 83.3 �C/W G Junction-to-Ambient 1 (surface mounted) Maximum Temperature for TL Soldering Purposes 260 �C xx = Specific Device Code Time in Solder Bath 10 Sec

5.10. bcp56.pdf Size:165K _secos

emperature TSTG -65~+150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Max. Unit Test Conditions V(BR)CBO 100 V IC=0.1mA , IE=0 Collector-base breakdown voltage V(BR)CEO 80 V IC= 1mA, IB=0 Collector-emitter breakdown voltage V(BR)EBO 5 V IE= 10?A, IC=0 Emitter-base breakdown voltage ICBO 100 nA VCB= 30V, IE=0 Collector cut-off current hFE (1) 63 VCE= 2V, IC= 5mA DC current gain1 hFE (2) 63 250 VCE= 2V, IC= 150mA hFE (3) 40 VCE

5.11. bcp56.pdf Size:341K _wietron

1/3 15-Jul-05 http://www.weitron.com.tw BCP56 ON CHARACTERISTICS DC Current Gain (VCE = 2V, IC = 5mA) hFE1 63 - - - hFE2 63 - 250 - (VCE = 2V, IC = 150mA) hFE3 40 - - - (VCE = 2V, IC = 500mA) Collector-Emitter Saturation Voltages VCE(sat) - - mV 500 (IC = 500mA,IB = 50mA) Base-Emitter ON Voltages VBE(ON) - - 1 V (VCE = 5V, IC = 0.5A, f=100MHz) DYNAMIC CHARACTERISTICS Transition frequency - 130 - MHz ft (VCE = 2V, IC = 150mA) CLASSIFICATION OF hFE2 Rank 10 16 Range 63-

Altri tipi di transistor... BCP55-10T3 , BCP55-16 , BCP55-16T1 , BCP55-16T3 , BCP56 , BCP56-10 , BCP56-10T1 , BCP56-10T3 , TIP31C , BCP56-16T1 , BCP56-16T3 , BCP56T3 , BCP627A , BCP627B , BCP627C , BCP628A , BCP628B .


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