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BCW31CSM
. Il Transistor Bipolare. Curve Caratteristiche. Datasheet. Tipo: BCW31CSM
Materiale principale: Si
Struttura: PNP
Potenza massima dissipabile (Pc): 0.35
Tensione tra collettore e base (Ucb): 0
Tensione tra collettore ed emettitore (Uce): 32
Tensione tra base ed emettitore (Ueb): 0
Massima corrente continuativa (Ic): 0.1
Temperatura di giunzione (Tj), °C: 150
Frequenza di transizione (ft): 300
Capacità di uscita (Cc), Pf: 4
Il guadagno di tensione in continua (hfe): 120
Pack: LCC3
Equivalente per i BCW31CSM
BCW31CSM
- Potete trovare data sheet, manuali di istruzioni e altre informazioni per il vostro lavoro disponibili per il download in formato PDF
5.1. bcw31_bcw32_bcw33_2.pdf  Size:112K _philips  |
 | 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter - 32 V
VCEO collector-emitter voltage open base; IC = 2 mA - 32 V
VEBO emitter-base voltage open collector - 5 V
IC collector current (DC) - 100 mA
ICM peak collector current - 200 mA
IBM peak base current - 200 mA
Ptot total power dissipation Tamb ? 25 °C - 250 mW
Tstg storage temperature -65 +150 °C
Tj junction temperature - 150 °C
Tamb operating ambient temperature -65 +150 °C
2004 Feb 06 2 |
5.2. bcw31_bcw32_bcw33.pdf Size:49K _philips  |
 | se; IC =2mA - 32 V
VEBO emitter-base voltage open collector - 5V
IC collector current (DC) - 100 mA
ICM peak collector current - 200 mA
IBM peak base current - 200 mA
Ptot total power dissipation Tamb ? 25 °C - 250 mW
Tstg storage temperature -65 +150 °C
Tj junction temperature - 150 °C
Tamb operating ambient temperature -65 +150 °C
2000 Jul 04 2
Philips Semiconductors Product specification
NPN general purpose transistors BCW31; BCW32; BCW33
THERMAL CHARACTERISTICS
SYMBOL PARAMETER |
5.3. bcw31.pdf Size:85K _fairchild_semi  |
 | se Breakdown Voltage IC = 2.0mA, IB = 0 32 V
V(BR)CEO Collector-Emitter Breakdown Voltage IC = 10µA, IB = 0 32 V
V(BR)EBO Emitter-Base Breakdown Voltage IC = 10µA, IC = 0 5.0 V
ICBO Collector Cutoff Current VCB = 32V, IE = 0 100 nA
VCB = 32V, IE = 0, TA = 100°C 10 µA
On Characteristics
hFE DC Current Gain IC = 2.0mA, VCE = 5.0V 110 220
VCE(sat) Collector-Emitter Saturation Voltage IC = 10mA, IB = 0.5mA 0.25 V
VBE(on) Base-Emitter On Voltage IC = 2.0mA, VCE = 5.0V 0.55 0.7 V
Small Signal |
5.4. bcw31_bcw32_bcw33.pdf Size:27K _diodes 5.5. bcw31_bcw32.pdf Size:193K _kec  |
 | Voltage IC=10? 30 - - V
V(BR)CEO IC=2mA
Collector-Emitter Breakdown Voltage 20 - - V
V(BR)EBO
A
Emitter-Base Breakdown Voltage IE=10? 5 - - V
ICBO VCB=30V
Collector Cut-off Current - - 100 nA
IEBO VEB=5V
Emitter Cut-off Current - - 100 nA
BCW31 110 - 220
hFE VCE=5V, IC=2mA
DC Current Gain
BCW32 200 - 450
VCE(sat) IC=10mA, IB=0.5mA
Collector-Emitter Saturation Voltage - - 0.25 V
VBE(ON) VCE=5V, IC=2mA
Base-Emitter On Voltage 0.55 - 0.7 V
Cob VCB=10V, IE=0, f=1MHz
Collector Ou |
Altri tipi di transistor... BCW29LT3
, BCW29R
, BCW30
, BCW30CSM
, BCW30LT1
, BCW30LT3
, BCW30R
, BCW31
, KD502
, BCW31LT1
, BCW31LT3
, BCW31R
, BCW32
, BCW32CSM
, BCW32LT1
, BCW32LT3
, BCW32R
.
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