BDT42BF
. Il Transistor Bipolare. Curve Caratteristiche. Datasheet. Tipo: BDT42BF
Materiale principale: Si
Struttura: PNP
Potenza massima dissipabile (Pc): 20
Tensione tra collettore e base (Ucb): 120
Tensione tra collettore ed emettitore (Uce): 120
Tensione tra base ed emettitore (Ueb): 0
Massima corrente continuativa (Ic): 6
Temperatura di giunzione (Tj), °C: 150
Frequenza di transizione (ft): 3
Capacità di uscita (Cc), Pf:
Il guadagno di tensione in continua (hfe): 15
Pack: ISO220
Equivalente per i BDT42BF
BDT42BF
PDF doc:
5.1. bdt42f-af-bf-cf.pdf  Size:106K _inchange_semiconductor  |
 | INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Power Transistors BDT42F/AF/BF/CF
DESCRIPTION
·DC Current Gain -hFE = 30(Min)@ IC= -0.3A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -40V(Min)- BDT42F; -60V(Min)- BDT42AF
-80V(Min)- BDT42BF; -100V(Min)- BDT42CF
·Complement to Type BDT41F/AF/BF/CF
APPLICATIONS
·Designed for use in general purpose amplifer and switching
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25?)
SYMBOL PARAMETER VALUE UNIT
BDT42F -80
BDT42AF -100
VCBO Collector-Base Voltage V
BDT42BF -120
BDT42CF -140
BDT42F -40
BDT42AF -60
VCEO Collector-Emitter V
Voltage
BDT42BF -80
BDT42CF -100
VEBO Emitter-Base Voltage -5 V
IC Collector Current-Continuous -6 A
ICM Collector Current-Peak -10 A
IBB Base Current -3 A
Collector Power Dissipation
PC TC=25? 32 W
Tj Junction Temperature 150 ?
Storage Temperature Range -65~150 ?
Tstg
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
Thermal Resistanc |
5.2. bdt42f_af_bf_cf.pdf Size:106K _inchange_semiconductor  |
 | INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Power Transistors BDT42F/AF/BF/CF
DESCRIPTION
·DC Current Gain -hFE = 30(Min)@ IC= -0.3A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -40V(Min)- BDT42F; -60V(Min)- BDT42AF
-80V(Min)- BDT42BF; -100V(Min)- BDT42CF
·Complement to Type BDT41F/AF/BF/CF
APPLICATIONS
·Designed for use in general purpose amplifer and switching
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25?)
SYMBOL PARAMETER VALUE UNIT
BDT42F -80
BDT42AF -100
VCBO Collector-Base Voltage V
BDT42BF -120
BDT42CF -140
BDT42F -40
BDT42AF -60
VCEO Collector-Emitter V
Voltage
BDT42BF -80
BDT42CF -100
VEBO Emitter-Base Voltage -5 V
IC Collector Current-Continuous -6 A
ICM Collector Current-Peak -10 A
IBB Base Current -3 A
Collector Power Dissipation
PC TC=25? 32 W
Tj Junction Temperature 150 ?
Storage Temperature Range -65~150 ?
Tstg
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
Thermal Resistanc |
5.3. bdt42_a_b_c.pdf Size:157K _inchange_semiconductor  |
 | INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Power Transistors BDT42/A/B/C
DESCRIPTION
·DC Current Gain -hFE = 30(Min)@ IC= -0.3A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -40V(Min)- BDT42; -60V(Min)- BDT42A
-80V(Min)- BDT42B; -100V(Min)- BDT42C
·Complement to Type BDT41/A/B/C
APPLICATIONS
·Designed for use in general purpose amplifer and switching
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25?)
SYMBOL PARAMETER VALUE UNIT
BDT42 -80
BDT42A -100
VCBO Collector-Base Voltage V
BDT42B -120
BDT42C -140
BDT42 -40
BDT42A -60
VCEO Collector-Emitter Voltage V
BDT42B -80
BDT42C -100
VEBO Emitter-Base Voltage -5 V
IC Collector Current-Continuous -6 A
ICM Collector Current-Peak -10 A
IBB Base Current -3 A
Collector Power Dissipation
PC TC=25? 65 W
Tj Junction Temperature 150 ?
Storage Temperature Range -65~150 ?
Tstg
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
Thermal Resistance,Junction to Case 1.9 |
Altri tipi di transistor... BDT41BF
, BDT41C
, BDT41CF
, BDT41F
, BDT42
, BDT42A
, BDT42AF
, BDT42B
, TIP41C
, BDT42C
, BDT42CF
, BDT42F
, BDT51
, BDT52
, BDT53
, BDT54
, BDT55
.
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