| |
BF820S
. Il Transistor Bipolare. Curve Caratteristiche. Datasheet. Tipo: BF820S
Materiale principale: Si
Struttura: NPN
Potenza massima dissipabile (Pc): 0.335
Tensione tra collettore e base (Ucb): 300
Tensione tra collettore ed emettitore (Uce): 300
Tensione tra base ed emettitore (Ueb): 5
Massima corrente continuativa (Ic): 0.025
Temperatura di giunzione (Tj), Β°C: 150
Frequenza di transizione (ft): 60
CapacitΓ di uscita (Cc), Pf: 1.8
Il guadagno di tensione in continua (hfe): 50
Pack: SOT23
Equivalente per i BF820S
BF820S
PDF doc:
5.1. bf820_bf822_3.pdf  Size:47K _philips  |
 | DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BF820; BF822
NPN high-voltage transistors
1999 Apr 15
Product specification
Supersedes data of 1997 Apr 23
Philips Semiconductors Product specification
NPN high-voltage transistors BF820; BF822
FEATURES PINNING
Low current (max. 50 mA)
PIN DESCRIPTION
High voltage (max. 300 V).
1 base
2 emitter
APPLICATIONS
3 collector
Telephony and professional communication equipment.
DESCRIPTION
handbook, halfpage
NPN high-voltage transistor in a SOT23 plastic package.
3
3
PNP complements: BF821; BF823.
1
MARKING
TYPE NUMBER MARKING CODE(1) 2
1 2
BF820 1V?
Top view
MAM255
BF822 1X?
Note
1. ? = p : Made in Hong Kong.
Fig.1 Simplified outline (SOT23) and symbol.
? = t : Made in Malaysia.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter
BF820 - 300 V
BF822 - 250 V
VCEO collector-emi |
5.2. bf820_bf822.pdf Size:99K _philips  |
 | DISCRETE SEMICONDUCTORS
DATA SHEET
BF820; BF822
NPN high-voltage transistors
Product data sheet 2004 Jan 16
Supersedes data of 1999 Apr 15
NXP Semiconductors Product data sheet
NPN high-voltage transistors BF820; BF822
FEATURES PINNING
Low current (max. 50 mA)
PIN DESCRIPTION
High voltage (max. 300 V).
1 base
2 emitter
APPLICATIONS
3 collector
Telephony and professional communication equipment.
DESCRIPTION
NPN high-voltage transistor in a SOT23 plastic package.
handbook, halfpage
3
PNP complements: BF821; BF823.
3
MARKING
1
TYPE NUMBER MARKING CODE(1)
2
1 2
BF820 1V*
BF822 1X*
Top view
MAM255
Note
1. * = p : Made in Hong Kong.
* = t : Made in Malaysia.
Fig.1 Simplified outline (SOT23) and symbol.
* = W : Made in China.
ORDERING INFORMATION
PACKAGE
TYPENUMBER
NAME DESCRIPTION VERSION
BF820 - plastic surface mounted package; 3 leads SOT23
BF822 - plastic surface mounted package; 3 leads SOT23
2004 Jan 16 2
NXP Semiconductors Prod |
5.3. bf820w_bf822w.pdf Size:46K _philips  |
 | DISCRETE SEMICONDUCTORS
DATA SHEET
BF820W; BF822W
NPN high-voltage transistors
1997 Sep 03
Product specification
Supersedes data of 1997 Jun 19
File under Discrete Semiconductors, SC04
Philips Semiconductors Product specification
NPN high-voltage transistors BF820W; BF822W
FEATURES PINNING
Low current (max. 50 mA)
PIN DESCRIPTION
High voltage (max. 300 V).
1 base
2 emitter
APPLICATIONS
3 collector
Telephony and professional communication equipment.
DESCRIPTION 3
handbook, halfpage
NPN high-voltage transistor in a SOT323 plastic package.
3
1
MARKING
TYPE NUMBER MARKING CODE
2
1 2
BF820W 1Vt
BF822W 1Wt
Top view MAM062
Fig.1 Simplified outline (SOT323) and symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter
BF820W - 300 V
BF822W - 250 V
VCEO collector-emitter voltage open base
BF820W - 300 V
BF822W - 250 V
ICM peak collector current - 100 mA
Ptot total power dissipation Tamb ? 25 ° |
5.4. bf820w.pdf Size:107K _philips  |
 | DISCRETE SEMICONDUCTORS
DATA SHEET
ge
M3D102
BF820W
NPN high-voltage transistor
Product data sheet 2003 Sep 09
Supersedes data of 1997 Sep 03
NXP Semiconductors Product data sheet
NPN high-voltage transistor BF820W
FEATURES PINNING
Low current (max. 50 mA)
PIN DESCRIPTION
High voltage (max. 300 V).
1 base
2 emitter
APPLICATIONS
3 collector
Telephony and professional communication equipment.
DESCRIPTION
3
handbook, halfpage
NPN high-voltage transistor in a SOT323 plastic package.
3
1
MARKING
TYPE NUMBER MARKING CODE(1)
2
1 2
BF820W 1V*
Top view MAM062
Notes
1. * = p : made in Hong Kong.
Fig.1 Simplified outline (SOT323) and symbol.
* = t : made in Malaysia.
* = W : made in China.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter - 300 V
VCEO collector-emitter voltage open base - 300 V
ICM peak collector current - 100 mA
Ptot total power dissipation Tamb ? 25 °C - 200 mW
hFE DC cu |
5.5. bf820.pdf Size:606K _htsemi  |
 | BF8 20/ BF8 22
TRANSISTOR (NPN)
SOT-23
FEATURES
Low current (max.50 mA)
1. BASE
High voltage (max.300V)
2. EMITTER
Telephony and professional communication equipment. 3. COLLECTOR
MARKING: BF820:1V, BF822: 1X
MAXIMUM RATINGS (TA=25? unless otherwise noted)
Symbol Parameter Value Units
Collector-Base Voltage BF820 300
VCBO V
BF822 250
Collector-Emitter Voltage BF820 300
VCEO V
BF822 250
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 50 mA
PC Collector Power Dissipation 0.25 W
Tj Junction Temperature 150
?
Tstg Storage Temperature -55-150
?
ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
300
IC=100?A, IE=0 BF820
Collector-base breakdown voltage V(BR)CBO V
250
BF822
IC=1mA, IB=0 BF820 300
Collector-emitter breakdown voltage V(BR)CEO V
BF822 250
Emitter-base breakdown voltage V(BR)EBO 5 V
IE= 100?A, IC=0
Collector cut-off current ICBO |
5.6. bf820-822.pdf Size:194K _lge  |
 | BF820/BF822
SOT-23 Transistor(NPN)
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
Features
Low current (max.50 mA)
High voltage (max.300V)
Telephony and professional communication equipment.
MARKING: BF820:1V, BF822: 1X
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (TA=25? unless otherwise noted)
Symbol Parameter Value Units
Collector-Base Voltage BF820 300
VCBO V
BF822 250
Collector-Emitter Voltage BF820 300
VCEO V
BF822 250
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 50 mA
PC Collector Power Dissipation 0.25 W
Tj Junction Temperature 150
?
Tstg Storage Temperature -55-150
?
ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
300
IC=100?A, IE=0 BF820
Collector-base breakdown voltage V(BR)CBO V
250
BF822
IC=1mA, IB=0 BF820 300
Collector-emitter breakdown voltage V(BR)CEO V
BF822 250
Emitter-base breakdown voltage V(BR)EBO 5 V
IE= |
Altri tipi di transistor... BF789
, BF790
, BF791
, BF792
, BF799
, BF819
, BF819A
, BF820
, 2N1711
, BF821
, BF821S
, BF822
, BF822S
, BF823
, BF823S
, BF824
, BF840
.
|
