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2N3019
. Il Transistor Bipolare. Curve Caratteristiche. Datasheet. Tipo: 2N3019
Materiale principale: Si
Struttura: NPN
Potenza massima dissipabile (Pc): 0.8
Tensione tra collettore e base (Ucb): 140
Tensione tra collettore ed emettitore (Uce): 80
Tensione tra base ed emettitore (Ueb): 7
Massima corrente continuativa (Ic): 1
Temperatura di giunzione (Tj), °C: 190
Frequenza di transizione (ft): 100
Capacità di uscita (Cc), Pf: 12
Il guadagno di tensione in continua (hfe): 100
Pack: TO5
Equivalente per i 2N3019
2N3019
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1.1. 2n3019_cnv_2.pdf  Size:51K _philips  |
 | A; VCE = 10 V; f = 100 MHz 100 - MHz
1997 Jun 19 2
Philips Semiconductors Product specification
NPN medium power transistor 2N3019
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter - 140 V
VCEO collector-emitter voltage open base - 80 V
VEBO emitter-base voltage open collector - 7V
IC collector current (DC) - 1A
ICM peak collector current - 1A
IBM peak base current - 20 |
1.2. 2n3019.pdf Size:46K _st  |
 |
Current (IE = 0) VCB = 90 V TC = 150 oC 10 µA
I Emitter Cut-off Current V = 5 V 10 nA
EBO EB
(IC = 0)
V Collector-Base I = 100 µA 140 V
(BR)CBO C
Breakdown Voltage
(I = 0)
E
V ? Collector-Emitter I = 10 mA 80 V
(BR)CEO C
Breakdown Voltage
(IB = 0)
V(BR)EBO Emitter-Base IE = 100 µA 7V
Breakdown Voltage
(IC = 0)
VCE(sat)? Collector-Emitter IC = 150 mA IB = 15 mA 0.2 V
Saturation Voltage IC = 500 mA IB = 50 mA 0.5 V
V ? Base-Emitter I = 150 mA I = 15 mA 1.1 V
BE(sat) C B
Satu |
1.3. 2n3019_.pdf Size:47K _st  |
 |
Current (IE = 0) VCB = 90 V TC = 150 oC 10 µA
I Emitter Cut-off Current V = 5 V 10 nA
EBO EB
(IC = 0)
V Collector-Base I = 100 µA 140 V
(BR)CBO C
Breakdown Voltage
(I = 0)
E
V ? Collector-Emitter I = 10 mA 80 V
(BR)CEO C
Breakdown Voltage
(IB = 0)
V(BR)EBO Emitter-Base IE = 100 µA 7V
Breakdown Voltage
(IC = 0)
VCE(sat)? Collector-Emitter IC = 150 mA IB = 15 mA 0.2 V
Saturation Voltage IC = 500 mA IB = 50 mA 0.5 V
V ? Base-Emitter I = 150 mA I = 15 mA 1.1 V
BE(sat) C B
Satu |
1.4. 2n3019_2n3020.pdf Size:60K _central 1.5. 2n3019_2n3020.pdf Size:184K _cdil  |
 | e Breakdown Voltage IC=100µA, IE=0 140 V
BVEBO
Emitter Base Breakdown Voltage IE=100µA, IC =O 7 V
ICBO VCB=90V, IE=0
Collector Leakage Current 10 n?
VCB=90V, IE=0, Ta=150?C 10 µA
IEBO VEB=5V, IC=0
Emitter Leakage Current 10 n?
VCE(sat) * IC =150mA, IB =15mA
Collector Emitter Saturation Voltage 0.2 V
IC =500mA, IB =50mA 0.5 V
VBE(sat) * IC=150mA, IB =15mA
Base Emitter Saturation Voltage 1.1 V
Continental Device India Limited Data Sheet Page 1 of 4
NPN SILICON PLANAR EPITAXIAL TRANS |
1.6. 2n3019_2n3057_2n3700.pdf Size:71K _microsemi  |
 | 700UB
10.3 mW/0C for types 2N3057A, 2N3700, & 2N3700UB for T ? +250C.
C
*See appendix A for package
outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
V 140 Vdc
(BR)
CBO
IC = 100 µAdc
Emitter-Base Breakdown Voltage
V 7.0 Vdc
(BR)
EBO
IE = 100 µAdc
Collector-Emitter Breakdown Current
V 80 Vdc
(BR)
CEO
IC = 30 mAdc
6 Lake Street, Lawrence, MA 01841 |
Altri tipi di transistor... 2N3012
, 2N3013
, 2N3013R
, 2N3014
, 2N3015
, 2N3016
, 2N3017
, 2N3018
, BD140
, 2N3019CSM
, 2N3019S
, 2N3019UB
, 2N301A
, 2N301-B
, 2N301-G
, 2N301-W
, 2N302
.
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