| |
BF871S
. Il Transistor Bipolare. Curve Caratteristiche. Datasheet. Tipo: BF871S
Materiale principale: Si
Struttura: NPN
Potenza massima dissipabile (Pc): 5
Tensione tra collettore e base (Ucb): 300
Tensione tra collettore ed emettitore (Uce): 300
Tensione tra base ed emettitore (Ueb): 5
Massima corrente continuativa (Ic): 0.05
Temperatura di giunzione (Tj), °C: 150
Frequenza di transizione (ft): 60
Capacità di uscita (Cc), Pf: 2
Il guadagno di tensione in continua (hfe): 50
Pack: TO202
Equivalente per i BF871S
BF871S
PDF doc:
5.1. bf869_bf871.pdf  Size:48K _philips  |
 | DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
M3D067
BF869; BF871
NPN high-voltage transistors
1999 Apr 12
Product specification
Supersedes data of 1996 Dec 09
Philips Semiconductors Product specification
NPN high-voltage transistors BF869; BF871
FEATURES
• Low feedback capacitance.
handbook, halfpage
APPLICATIONS
• For use in class-B video output stages in colour
television receivers.
2
DESCRIPTION
3
NPN transistors in a TO-202 plastic package.
1
PNP complement: BF872.
PINNING
1 2 3
PIN DESCRIPTION
MBH793
1 emitter
2 collector, connected to mounting base
Fig.1 Simplified outline (TO-202) and symbol.
3 base
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter
BF869 - 250 V
BF871 - 300 V
VCEO collector-emitter voltage open base
BF869 - 250 V
BF871 - 300 V
VEBO emitter-base voltage open collector - 5 V
IC collector current (DC) |
5.2. bf869_bf871_3.pdf Size:64K _philips  |
 | DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D100
BF470; BF472
PNP high-voltage transistors
1996 Dec 09
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
Philips Semiconductors Product specification
PNP high-voltage transistors BF470; BF472
FEATURES
• Low feedback capacitance.
handbook, halfpage
APPLICATIONS
2
• Class-B video output stages in television receivers and
for high-voltage IF output stages.
3
1
DESCRIPTION
PNP transistors in a TO-126; SOT32 plastic package.
NPN complements: BF469 and BF471.
MAM272
Top view
1 2 3
PINNING
PIN DESCRIPTION
1 emitter
Fig.1 Simplified outline (TO-126; SOT32) and
2 collector, connected to mounting base
symbol.
3 base
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter
BF470 --250 V
BF472 --300 V
VCEO collector-emitter voltage open base
BF470 --250 V
BF472 --300 V
ICM peak collector current --100 mA
P |
5.3. bf869_bf871_1.pdf Size:63K _philips  |
 | DISCRETE SEMICONDUCTORS
DATA SHEET
M3D067
BF869; BF871
NPN high-voltage transistors
1996 Dec 09
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
Philips Semiconductors Product specification
NPN high-voltage transistors BF869; BF871
FEATURES
• Low feedback capacitance.
handbook, halfpage
APPLICATIONS
• For use in class-B video output stages in colour
television receivers.
2
DESCRIPTION
3
NPN transistors in a TO-202 plastic package.
1
PNP complements: BF870 and BF872.
PINNING
1 2 3
PIN DESCRIPTION
MBH793
1 emitter
2 collector, connected to mounting base
Fig.1 Simplified outline (TO-202) and symbol.
3 base
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter
BF869 - 250 V
BF871 - 300 V
VCEO collector-emitter voltage open base
BF869 - 250 V
BF871 - 300 V
ICM peak collector current - 100 mA
Ptot total power dissipation Tmb ? 25 °C - 5W
hFE DC current |
Altri tipi di transistor... BF870BA
, BF870EA
, BF870S
, BF870SA
, BF871
, BF871A
, BF871BA
, BF871EA
, 5609
, BF871SA
, BF872
, BF872A
, BF872BA
, BF872EA
, BF872S
, BF872SA
, BF876
.
|
