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C102
. Il Transistor Bipolare. Curve Caratteristiche. Datasheet. Tipo: C102
Materiale principale: Si
Struttura: PNP
Potenza massima dissipabile (Pc): 0.25
Tensione tra collettore e base (Ucb): 30
Tensione tra collettore ed emettitore (Uce): 0
Tensione tra base ed emettitore (Ueb): 0
Massima corrente continuativa (Ic): 0.05
Temperatura di giunzione (Tj), °C: 150
Frequenza di transizione (ft): 0.8
Capacità di uscita (Cc), Pf: 50
Il guadagno di tensione in continua (hfe): 13
Pack: TO5
Equivalente per i C102
C102
PDF doc:
1.1. ktc1026.pdf  Size:89K _kec  |
 | SEMICONDUCTOR KTC1026
TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR
HIGH VOLTAGE APPLICATION.
COLOR TV CLASS B SOUND OUTPUT APPLICATION.
B D
FEATURES
High Voltage : VCEO=180V.
DIM MILLIMETERS
P
High DC Current Gain.
DEPTH:0.2
A 7.20 MAX
B 5.20 MAX
C
C 0.60 MAX
S
D 2.50 MAX
Q
E 1.15 MAX
K
F 1.27
G 1.70 MAX
MAXIMUM RATINGS (Ta=25 )
H 0.55 MAX
FF
_
J 14.00 + 0.50
CHARACTERISTIC SYMBOL RATING UNIT
K 0.35 MIN
HH H
_
L 0.75 + 0.10
VCBO
Collector-Base Voltage 200 V
E M 4
M
N 25
VCEO
Collector-Emitter Voltage 180 V
O 1.25
L
1 2 3
H
P ?1.50
VEBO
Emitter-Base Voltage 5 V
Q 0.10 MAX
N N
_
R 12.50 + 0.50
IC
Collector Current 100 mA
1. EMITTER
S 1.00
2. COLLECTOR
IB
Base Current 50 mA
3. BASE
PC
Collector Power Dissipation 1 W
Tj
Junction Temperature 150
TO-92L
Tstg -55 150
Storage Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
ICBO VCB=200V, IE=0
Collector Cut |
1.2. ktc1020.pdf Size:72K _kec  |
 | SEMICONDUCTOR KTC1020
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
B
FEATURES
Excellecnt hFE Linearity
: hFE(2)=25Min. : VCE=6V, IC=400mA.
DIM MILLIMETERS
O
A 3.20 MAX
1 Watt Amplifier Application.
H
M B 4.30 MAX
C 0.55 MAX
Complementary to KTA1021.
_
D 2.40 + 0.15
E 1.27
F 2.30
C
_
+
G 14.00 0.50
H 0.60 MAX
J 1.05
E E
K 1.45
MAXIMUM RATINGS (Ta=25 )
L 25
M 0.80
CHARACTERISTIC SYMBOL RATING UNIT
N 0.55 MAX
3
1 2 N
O 0.75
VCBO
Collector-Base Voltage 35 V
L
VCEO
Collector-Emitter Voltage 30 V 1. EMITTER
2. COLLECTOR
VEBO
Emitter-Base Voltage 5 V
3. BASE
IC
Collector Current 500 mA
IE
Emitter Current -500 mA
TO-92M
PC
Collector Power Dissipation 400 mW
Tj
Junction Temperature 150
Tstg -55 150
Storage Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
ICBO VCB=35V, IE=0
Collector Cut-off Current - - 0.1
A
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1.3. ktc1027.pdf Size:79K _kec  |
 | SEMICONDUCTOR KTC1027
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
HIGH VOLTAGE APPLICATION.
B D
FEATURE
Complementary to KTA1023.
DIM MILLIMETERS
P
DEPTH:0.2
A 7.20 MAX
B 5.20 MAX
C
C 0.60 MAX
S
MAXIMUM RATING (Ta=25 )
D 2.50 MAX
Q
E 1.15 MAX
K
CHA RACTERISTIC SYMBOL RATING UNIT
F 1.27
G 1.70 MAX
VCBO
Collector-Base Voltage 120 V
H 0.55 MAX
FF
_
J 14.00 + 0.50
VCEO
Collector-Emitter Voltage 120 V K 0.35 MIN
HH H
_
L 0.75 + 0.10
VEBO E M 4
Emitter-Base Voltage 5 V M
N 25
O 1.25
IC
Collector Current 800 mA
L
1 2 3
H
P ?1.50
Q 0.10 MAX
IE
Emitter Current -800 mA N N
_
R 12.50 + 0.50
1. EMITTER
S 1.00
PC
Collector Power Dissipation 1 W
2. COLLECTOR
Tj 3. BASE
Junction Temperature 150
Tstg -55 150
Storage Temperature Range
TO-92L
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
ICBO VCB=120V, IE=0
Collector Cut-off Current - - 100 nA
IEBO VEB=5V, IC=0
Emitter Cut-off Current |
1.4. 2sc1027.pdf Size:113K _inchange_semiconductor  |
 | Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC1027
DESCRIPTION Ў¤ With TO-3 package Ў¤ High power dissipation Ў¤ Low collector saturation voltage APPLICATIONS Ў¤ Switching regulators Ў¤ DC-DC convertor Ў¤ General purpose power amplifiers
PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION
Absolute maximum ratings(Ta=Ўж )
SYMBOL VCBO VCEO VEBO IC PC Tj Tstg
PARAMETER
Fig.1 simplified outline (TO-3) and symbol
HAN INC
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current
SEM GE
OND IC
CONDITIONS
TOR UC
VALUE 250 80 5 6
UNIT V V V A W Ўж Ўж
Open emitter
Open base Open collector
Collector power dissipation Junction temperature Storage temperature
TC=25Ўж
50 150 -55~150
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1.5. ktc1027.pdf Size:45K _wietron  |
 | KTC1027
WEITRON
NPN Transistor
P b Lead(Pb)-Free
1. EMITTER
2. COLLECTOR
3. BASE
TO-92L
MAXIMUM RATINGS (TA=25? unless otherwise noted)
value
Parameter Symbol Units
Collector-Base Voltage VCBO 120 V
120 V
Collector-Emitter Voltage VCEO
5 V
Emitter-Base Voltage VEBO
0.8 A
Collector Current -Continuous IC
Collector Power Dissipation PC 0.75 W
R?JA
Thermal Resistance From Junction To Ambient
167 °C/W
Junction Temperature TJ 150 °C
Storage Temperature Tstg -55 to- +150 °C
ELECTRICAL CHARACTERISTICS (Tamb=25°C unless otherwise specified)
Parameter Symbol Test conditions MIN TYPE MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=1mA, IE=0 120 V
Collector-emitter breakdown voltage V(BR)CEO IC= 10 mA, IB=0 120 V
Emitter-base breakdown voltage V(BR)EBO IE=1mA, IC=0 5 V
Collector cut-off current ICBO VCB= 120V, IE=0 0.1 ? A
Emitter cut-off current IEBO VEB=5V, IC=0 0.1 ? A
DC current gain hFE VCE=5V, IC= 100mA 80 240
Collector-emitter saturation voltag |
Altri tipi di transistor... C066P
, C1
, C100
, C1001
, C1002
, C1003
, C1004
, C101
, GT806B
, C103
, C106
, C112
, C1-12
, C118
, C119
, C12-28
, C1-28
.
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