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2N3410
. Il Transistor Bipolare. Curve Caratteristiche. Datasheet. Tipo: 2N3410
Materiale principale: Si
Struttura: NPN
Potenza massima dissipabile (Pc): 0.6
Tensione tra collettore e base (Ucb): 60
Tensione tra collettore ed emettitore (Uce): 30
Tensione tra base ed emettitore (Ueb): 5
Massima corrente continuativa (Ic): 0.5
Temperatura di giunzione (Tj), °C: 200
Frequenza di transizione (ft): 250
Capacità di uscita (Cc), Pf: 8
Il guadagno di tensione in continua (hfe): 50
Pack: TO77-1
Equivalente per i 2N3410
2N3410
- Potete trovare data sheet, manuali di istruzioni e altre informazioni per il vostro lavoro disponibili per il download in formato PDF
5.1. 2n3415.pdf  Size:33K _fairchild_semi  |
 | sipation 625 mW
° °
Derate above 25 C 5.0 mW/ C
R Thermal Resistance, Junction to Case 83.3 °
C/W
?JC
R Thermal Resistance, Junction to Ambient 200 °C/W
?JA
© 2001 Fairchild Semiconductor Corporation 2N3415, Rev B
2N3415
NPN General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown IC = 10 mA, IB = 0 25 V
Voltage*
V(BR)CBO Collector-Bas |
5.2. 2n3416_2n3417.pdf Size:304K _fairchild_semi  |
 | e Dissipation 625 mW
5.0
Derate above 25°C mW/°C
Thermal Resistance, Junction to Case 83.3
R?JC °C/W
Thermal Resistance, Junction to Ambient 200
R °C/W
?JA
3416-3417, Rev B
© 1997 Fairchild Semiconductor Corporation
2N3416 / 2N3417
NPN General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown IC = 10 mA, IB = 0 50 V
Voltage*
V(BR)CBO C |
5.3. 2n3414_2n3415_2n3416_2n3417_mps3414_mps3415_mps3416_mps3417.pdf Size:58K _central 5.4. 2n3414.pdf Size:48K _microelectronics 5.5. 2n3419.pdf Size:63K _microsemi  |
 | y of these devices. The temperature
range to 200° TO-5
°C permits reliable operation in high ambients, and
the hermetically sealed package insures maximum reliability
and long life.
ABSOLUTE MAXIMUM RATINGS:
ABSOLUTE MAXIMUM RATINGS:
SYMBOL CHARACTERISTIC VALUE UNITS
VCBO* Collector-Base Voltage 125 Volts
VCEO* Collector-Emitter Voltage 80 Volts
VEBO* Emitter-Base Voltage 8 Volts
IC* D.C. Collector Current 3 Amps
IC* Peak Collector Current 5 Amps
TSTG* Storage Temperature -65 to 200 |
5.6. 2n3418.pdf Size:63K _microsemi  |
 | of these devices. The temperature
range to 200° TO-5
°C permits reliable operation in high ambients, and
the hermetically sealed package insures maximum reliability
and long life.
ABSOLUTE MAXIMUM RATINGS:
ABSOLUTE MAXIMUM RATINGS:
SYMBOL CHARACTERISTIC VALUE UNITS
VCBO* Collector-Base Voltage 85 Volts
VCEO* Collector-Emitter Voltage 60 Volts
VEBO* Emitter-Base Voltage 8 Volts
IC* D.C. Collector Current 3 Amps
IC* Peak Collector Current 5 Amps
TSTG* Storage Temperature -65 to 200 °C |
Altri tipi di transistor... 2N3403
, 2N3404
, 2N3405
, 2N3407
, 2N3408
, 2N3409
, 2N340A
, 2N341
, 2N3715
, 2N3410DCSM
, 2N3411
, 2N3411DCSM
, 2N3412
, 2N3413
, 2N3414
, 2N3415
, 2N3416
.
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