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2N350
. Il Transistor Bipolare. Curve Caratteristiche. Datasheet. Tipo: 2N350
Materiale principale: Ge
Struttura: PNP
Potenza massima dissipabile (Pc): 10
Tensione tra collettore e base (Ucb): 50
Tensione tra collettore ed emettitore (Uce): 40
Tensione tra base ed emettitore (Ueb): 0
Massima corrente continuativa (Ic): 3
Temperatura di giunzione (Tj), °C: 90
Frequenza di transizione (ft): 0.3
Capacità di uscita (Cc), Pf:
Il guadagno di tensione in continua (hfe): 20
Pack: TO3
Equivalente per i 2N350
2N350
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1.1. 2n3500-2n3501.pdf  Size:67K _central 1.2. 2n3502_2n3503_2n3504_2n3505.pdf Size:23K _semelab  |
 | Voltage -60V -45V
VEBO Emitter – Base Voltage -5V -5V
2N3502 2N3504
Maximum Power Dissipation
2N3503 2N3505
3 W 1.3 W
PD Total Dissipation @ 25°C Case Temperature
0.7 W 0.4 W
PD Total Dissipation@ 25°C Free Air Temperature
-65°C to +200°C
TJ Storage Temperature
200°C
Operating Junction Temperature
Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
Prelim. 4/99
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
min.
4.32 (0.170)
12.7 (0.500)
5.33 (0. |
1.3. 2n3506.pdf Size:45K _semicoa  |
 | -- V
IC = 10 µA
Collector-Emitter Breakdown Voltage
V(BR)CEO
40 --- V
IC = 10 mA
Emitter-Base Breakdown Voltage
V(BR)EBO 5.0 --- V
IE = 10 µA
Collector-Emitter Cutoff Current
ICEX1
--- 1.0 µA
VCE = 40 V, VEB = 4 V
Collector-Emitter Cutoff Current
ICEX2 --- 1.0 µA
VCE = 40 V, VEB = 4 V, TA = +150oC
Collector Current Continuous
IC
3.0 --- A
VCB = 50 V
ON Characteristics Symbol Min Max Unit
DC Current Gain
IC = 500 mA, VCE = 1 V (pulsed) hFE1 50 250 ---
IC = 1.5 A, VCE = 2 V |
1.4. 2n3507.pdf Size:46K _semicoa  |
 | µA
Collector-Emitter Breakdown Voltage
V(BR)CEO 50 --- V
IC = 10 mA
Emitter-Base Breakdown Voltage
V(BR)EBO
5.0 --- V
IE = 10 µA
Collector-Emitter Cutoff Current
ICEX1
--- 1.0 µA
VCE = 60 V, VEB = 4 V
Collector-Emitter Cutoff Current
ICEX2
--- 1.0 µA
VCE = 60 V, VEB = 4 V, TA = +150oC
Collector Current Continuous
IC 3.0 --- A
VCB = 50 V
ON Characteristics Symbol Min Max Unit
DC Current Gain
ICV ) h 35 175 --
=500 V
m (
A pu
, sedl -
=1
CE FE1
I = 1.5 A, VCE = 2 V (pu |
Altri tipi di transistor... 2N3497
, 2N3498
, 2N3498S
, 2N3499
, 2N3499S
, 2N349A
, 2N34A
, 2N35
, BC158
, 2N3500
, 2N3500S
, 2N3501
, 2N3501CSM4
, 2N3501DCSM
, 2N3501L
, 2N3501S
, 2N3502
.
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