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FMMT4140
. Il Transistor Bipolare. Curve Caratteristiche. Datasheet. Tipo: FMMT4140
Materiale principale: Si
Struttura: NPN
Potenza massima dissipabile (Pc): 0.3
Tensione tra collettore e base (Ucb): 60
Tensione tra collettore ed emettitore (Uce): 30
Tensione tra base ed emettitore (Ueb): 5
Massima corrente continuativa (Ic): 0.5
Temperatura di giunzione (Tj), °C: 150
Frequenza di transizione (ft): 250
Capacità di uscita (Cc), Pf: 8
Il guadagno di tensione in continua (hfe): 40
Pack: TO236
Equivalente per i FMMT4140
FMMT4140
PDF doc:
4.1. fmmt413.pdf  Size:145K _diodes  |
 | FMMT413
SOT23 NPN silicon planar avalanche transistor
Summary
V(BR)CES = 150V, V(BR)CEO = 50V, IUSB = 25A
Description
The FMMT413 is a NPN silicon planar bipolar transistor optimized for
avalanche mode operation. Tight process control and low inductance
packaging combine to produce high current pulses with fast edges, ideal
for laser diode driving.
Features
C
• Avalanche mode operation
• 50A peak avalanche current
B
• Low inductance packaging
Applications E
• Laser LED drivers
• Fast edge generation
• High speed pulse generators
E
C
Ordering information
Device Reel size Tape width Quantity per
B
(inches) (mm) reel
Pinout - top view
FMMT413TD 7 8 500
FMMT413TA 7 8 3,000
Device marking
413
Issue 3 - March 2006 1 www.zetex.com
© Zetex Semiconductors plc 2006
FMMT413
Absolute maximum ratings
Parameter Symbol Limit Unit
Collector-base voltage BVCBO 150 V
Collector-emitter voltage BVCEO 50 V
Emitter-base voltage BVEBO 6V
Peak pulse current (25ns Pulse |
4.2. fmmt4123.pdf Size:27K _diodes  |
 | SOT SI I O A A
T
S IT HI T A SISTO
ISS A H
T I D T I
A SO T A I ATI S
T V IT
II V I V V
II i V I V V
i V I V V
i II I
Di i i T °
i T T T °
T I A HA A T ISTI S a Ta
T I IT DITI
II V V I µ
V I
II i V V I
V I
i V V I µ
V I
II I V V
i I V V
II i V V I I
i V I
i V V I I
i V I
i I V V
T i I V V
T i i T I V V
i V V I
I i 8 V V I
i
i i I µ V V ?
i
II i I I V V
T
S IT HI HA A T ISTI S a Ta
T T IT DITI
D I Ti V V V V
I I
i Ti
Ti V V I
I I
II Ti
I i i I i µ D I ?
|
4.3. fmmt4126.pdf Size:27K _diodes  |
 | SOT SI I O A A
T 6
S IT HI T A SISTO
ISS A H
T I D T I
A SO T A I ATI S
T V IT
II V I V V
II i V I V V
i V I V V
i II I
Di i i T °
i T T T °
T I A HA A T ISTI S a Ta
T I IT DITI
II V V I µ
V I
II i V V I
V I
i V V I µ
V I
II I V V
i I V V
II i V V I I
i V I
i V V I I
i V I
i I V V
T i I V V
T i i T I V V
i V V I
I i V V I
i
i i I µ V V ?
i
II i I 8 I V V
T
S IT HI HA A T ISTI S a Ta
T T IT DITI
D I Ti V V V V
I I
i Ti 8
Ti V V I
I I
II Ti
I i i I i µ D I ?
|
4.4. fmmt4125.pdf Size:27K _diodes  |
 | SOT SI I O A A
T
S IT HI T A SISTO
ISS A H
T I D T I D
A SO T A I ATI S
T V IT
II V I V V
II i V I V V
i V I V V
i II I
Di i i T °
i T T T °
T I A HA A T ISTI S a Ta
T I IT DITI
II V V I µ
V I
II i V V I
V I
i V V I µ
V I
II I V V
i I V V
II i V V I I
i V I
i V V I I
i V I
i I V V
T i I V V
T i i T I V V
i V V I
I i V V I
i
i i I µ V V ?
i
II i I I V V
T
S IT HI HA A T ISTI S a Ta
T T IT DITI
D I Ti V V V V
I I
i Ti 8
Ti V V I
I I
II Ti
I i i I i µ D I ?
|
4.5. fmmt4124.pdf Size:27K _diodes  |
 | SOT SI I O A A
T
S IT HI T A SISTO
ISS A H
T I D T I
A SO T A I ATI S
T V IT
II V I V V
II i V I V V
i V I V V
i II I
Di i i T °
i T T T °
T I A HA A T ISTI S a Ta
T I IT DITI
II V V I µ
V I
II i V V I
V I
i V V I µ
V I
II I V V
i I V V
II i V V I I
i V I
i V V I I
i V I
i I V V
T i I V V
T i i T I V V
i V V I
I i 8 V V I
i
i i I µ V V ?
i
II i I 8 I V V
T
S IT HI HA A T ISTI S a Ta
T T IT DITI
D I Ti V V V V
I I
i Ti
Ti V V I
I I
II Ti
I i i I i µ D I ?
|
4.6. fmmt4124.pdf Size:386K _htsemi  |
 | FMMT4124
TRANSISTOR (NPN)
SOT–23
FEATURES
? Switching Application
MARKING:ZC
1. BASE
MAXIMUM RATINGS (Ta=25? unless otherwise noted)
2. EMITTER
Symbol Parameter Value Unit
3. COLLECTOR
V Collector-Base Voltage 30 V
CBO
V Collector-Emitter Voltage 25 V
CEO
V Emitter-Base Voltage 5 V
EBO
IC Collector Current 200 mA
PC Collector Power Dissipation 330 mW
R Thermal Resistance From Junction To Ambient 378 ?/W
?JA
T Junction Temperature 150 ?
j
T Storage Temperature -55~+150 ?
stg
ELECTRICAL CHARACTERISTICS (Ta=25? unless otherwise specified)
Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC=10µA, IE=0 30 V
Collector-emitter breakdown voltage V * I =1mA, I =0 25 V
(BR)CEO C B
Emitter-base breakdown voltage V I =10µA, I =0 5 V
(BR)EBO E C
Collector cut-off current I V =20V, I =0 50 nA
CBO CB E
Emitter cut-off current I V =3V, I =0 50 nA
EBO EB C
hFE(1) * VCE=1V, IC=2mA 120 360
DC c |
Altri tipi di transistor... FMMT3906R
, FMMT3962
, FMMT4121
, FMMT4122
, FMMT4123
, FMMT4124
, FMMT4125
, FMMT4126
, BU808DFI
, FMMT4141
, FMMT4142
, FMMT4143
, FMMT4146
, FMMT415
, FMMT417
, FMMT4248
, FMMT4249
.
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