FMMT4275 Datasheet. Il Transistor Bipolare. Curve Caratteristiche

ssipation* 500 mW PD Derate above 25�C 4 mW/�C 250 �C/W R?JA Thermal Resistance, Junction to Ambient *Device mounted on FR-4 PCB 4.5� X 5�; mounting pad 0.02 in2 of 2oz copper. � 1998Fairchild Semiconducto Corporation Page 1 of 2 fmmt449.lwpPrNB revA FMMT449 NPN Low Saturation Transistor (continued) Electrical Characteristics T A = 25�C unless otherwise noted Symbol Parameter Test Conditions Min Max Units OFF CHARACTERISTICS 30 V BVCEO Collector-Emitter Breakdown Voltage IC = 10

5.2. fmmt494.pdf Size:126K _diodes

5.3. fmmt413.pdf Size:145K _diodes

Width) ICM 50 A Continuous collector current IC 100 mA Power dissipation at Tamb =25�C PD 330 mW Linear derating factor Operating and storage temperature range Tj, Tstg -55 to +150 �C Thermal resistance Parameter Symbol Limit Unit R JA 378 �C/W Junction to ambient Issue 3 - March 2006 2 www.zetex.com � Zetex Semiconductors plc 2006 FMMT413 Electrical characteristics (at Tamb = 25�C unless otherwise stated) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown BV

5.4. fmmt451.pdf Size:121K _diodes

5.5. fmmt497.pdf Size:158K _diodes

S 100 nA VCES = 250V Emitter cut-off current IEBO 100 nA VEB = 4V Collector-emitter VCE(sat) 0.2 V IC = 100mA, IB = 10mA saturation voltage 0.3 V IC = 250mA, IB = 25mA Base-emitter VBE(sat) 1.0 V IC = 250mA, IB = 25mA saturation voltage Base-emitter VBE(on) 1.0 V IC = 250mA, VCE = 10V turn on voltage Static forward current hFE 100 IC = 1mA, VCE = 10V transfer ratio 80 300 IC = 100mA, VCE = 10V(*) 20 IC = 250mA, VCE = 10V(*) Transition frequency fT 75 MHz IC = 50mA, VCE = 10V f = 1

5.6. fmmt4400_fmmt4401.pdf Size:29K _diodes

5.7. fmmt4123.pdf Size:27K _diodes

5.8. fmmt4402_fmmt4403.pdf Size:30K _diodes

5.9. fmmt4126.pdf Size:27K _diodes

5.10. fmmt491a.pdf Size:130K _diodes

5.11. fmmt491.pdf Size:318K _diodes

to 150 �C Thermal resistance Parameter Symbol Value Unit R JA 250 �C/W Junction to ambient(a) NOTES: (a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. Issue 5 - November 2007 2 www.zetex.com � Zetex Semiconductors plc 2007 FMMT491 Characteristics Issue 5 - November 2007 3 www.zetex.com � Zetex Semiconductors plc 2007 FMMT491 Electrical characteristics (at Tamb = 25�C unless otherwise stated).

5.12. fmmt4125.pdf Size:27K _diodes

5.13. fmmt493.pdf Size:138K _diodes

5.14. fmmt459.pdf Size:190K _diodes

MMT459 Absolute maximum ratings Parameter Symbol Limit Unit Collector-base voltage VCBO 500 V Collector-emitter voltage VCEV 500 V Collector-emitter voltage VCEO 450 V Emitter-base voltage VEBO 6V Emitter-collector voltage VECV 6V Peak pulse current ICM 0.5 A IC 0.15 A Continuous collector current* Base current IB 0.2 A PD 625 mW Power dissipation @ TA=25�C* 5 mW/�C Linear derating factor PD 806 mW Power dissipation @ TA=25�C� 6.4 mW/�C Linear derating factor Operating and s

5.15. fmmt4124.pdf Size:27K _diodes

5.16. fmmt493a.pdf Size:140K _diodes

= 100 A Breakdown Voltage Collector Cut-Off Current ICBO 100 nA VCB = 45V Collector Cut-Off Current ICES 100 nA VCES = 45V Emitter Cut-Off Current IEBO 100 nA VEB = 4V Collector - Emitter VCE(SAT) 0.25 V IC = 500mA, IB = 50mA Saturation Voltage 0.5 V IC = 1A, IB = 100mA Base - Emitter Saturation VBE(SAT) 1.15 V IC=1A, IB = 100mA Voltage Base Emitter Turn On VBE(ON) 1.0 V IC = 1A, VCE - 10V Voltage Static Forward Current hFE 300 IC = 1mA, VCE = 10V Transfer Ratio 500 IC = 150mA, VCE

5.17. fmmt489.pdf Size:48K _diodes

5.18. fmmt495.pdf Size:121K _diodes

5.19. fmmt491.pdf Size:613K _htsemi

30 VCE(sat)1 1 IC=500mA,IB=50mA 0.25 V Collector-emitter saturation voltage VCE(sat)2 1 IC=1A,IB=100mA 0.5 V Base-emitter saturation voltage VBE(sat) 1 IC=1A,IB=100mA 1.1 V Base-emitter voltage VBE1 VCE=5V,IC=1A 1 V VCE=10V,IC=50mA,,f=100MHz 150 MHz Transition frequency f T Collector output capacitance Cob VCB=10V,f=1MHz 10 pF 1 Measured under pulsed conditions, Pulse width=300?s, Duty cycle?2%. 1 JinYu www.htsemi.com semiconductor Date:2011/05 FMMT491 Typical Character

5.20. fmmt449.pdf Size:359K _htsemi

) CE C h * V =2V, I =500mA 100 300 FE(2) CE C DC current gain h * V =2V, I =1A 80 FE(3) CE C h * V =2V, I =2A 40 FE(4) CE C V * I =1A, I =100mA 0.5 V CE(sat)1 C B Collector-emitter saturation voltage V * I =2A, I =200mA 1 V CE(sat)2 C B Base-emitter saturation voltage V * I =1A, I =100mA 1.25 V BE(sat) C B Base-emitter voltage V * V =2V, I =1A 1 V BE CE C V =10V,I =50mA, CE C Transition frequency f 150 MHz T f=100MHz Collector output capacitance C V =10V, I =0,

5.21. fmmt493.pdf Size:387K _htsemi

f current I V =4V, I =0 0.1 µA EBO EB C h * V =10V, I =1mA 100 FE(1) CE C h * V =10V, I =250mA 100 300 FE(2) CE C DC current gain h * V =10V, I =0.5A 60 FE(3) CE C hFE(4) * VCE=10V, IC=1A 20 V * I =500mA, I =50mA 0.3 V CE(sat)1 C B Collector-emitter saturation voltage V * I =1A, I =100mA 0.6 V CE(sat)2 C B Base-emitter saturation voltage V * I =1A, I =100mA 1.15 V BE(sat) C B Base-emitter voltage V * V =10V, I =1A 1 V BE CE C Transition frequency fT VCE=10V,IC=50mA

5.22. fmmt4124.pdf Size:386K _htsemi

urrent gain h * V =1V, I =50mA 60 FE(2) CE C Collector-emitter saturation voltage VCE(sat)* IC=50mA, IB=5mA 0.3 V Base-emitter saturation voltage V * I =50mA, I =5mA 0.95 V BE(sat) C B V =20V,I =10mA, CE C Transition frequency f 300 MHz T f=100MHz Collector output capacitance C V =5V, I =0, f=140KHz 4 pF ob CB E Emitter input capacitance C V =0.5V, I =0, f=140KHz 8 pF Ib BE E *Pulse test 1 JinYu www.htsemi.com semiconductor Date:2011/05

5.23. fmmt491.pdf Size:199K _lge

(3) 1 VCE=5V,IC=1A 80 hFE(4) 1 VCE=5V,IC=2A 30 VCE(sat)1 1 IC=500mA,IB=50mA 0.25 V Collector-emitter saturation voltage VCE(sat)2 1 IC=1A,IB=100mA 0.5 V Base-emitter saturation voltage VBE(sat) 1 IC=1A,IB=100mA 1.1 V Base-emitter voltage VBE1 VCE=5V,IC=1A 1 V VCE=10V,IC=50mA,,f=100MHz 150 MHz Transition frequency f T Collector output capacitance Cob VCB=10V,f=1MHz 10 pF 1 Measured under pulsed conditions, Pulse width=300?s, Duty cycle?2%. FMMT491 SOT-23 Transistor(NPN) Typic

5.24. fmmt491.pdf Size:379K _wietron

MMT491 Electrical Characteristics (TA=25?C Unless Otherwise noted) Characteristics Symbol Min Typ Max Unit On Characteristics(1) DC Current Gain hFE1 100 - - VCE = 5.0V, IC = 1.0mA hFE2 100 - 300 VCE = 5.0V, IC = 500mA - hFE3 80 - - VCE = 5.0V, IC = 1.0A hFE4 30 - - VCE = 5.0V, IC = 2.0A Collector-Emitter Saturation Voltage VCE(sat) 0.25 V IC = 500mA, IB=50mA - - 0.5 IC = 1.0A, IB=100mA Base-Emitter Saturation Voltage VBE(sat) - - 1.1 V IC = 1.0A, IB =100mA Base-Emit

Altri tipi di transistor... FMMT417 , FMMT4248 , FMMT4249 , FMMT4250 , FMMT4250A , FMMT4258 , FMMT4258A , FMMT4274 , 5609 , FMMT4354 , FMMT4355 , FMMT4356 , FMMT4400 , FMMT4401 , FMMT4402 , FMMT4403 , FMMT449 .


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